ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
S8050
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
NPN General Purpose Transistors
(Ta=25 C)
40
5.0
500
25
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0)
Collector Cutoff Current (VCE= 20 Vdc, I =0)
Collector Cutoff Current (VCB= 40 Vdc, IE=0)
Emitter Cutoff Current (VEB= 3.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
5.0
-
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
25
40
0.1
0.1
d
B
C
Current-Gain-Bandwidth Product
(IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= 500 Adc, IB= 50 mAdc)
Base-Emitter Saturation Voltage
(IC= 500 mAdc, IB= 50 mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
-
-
150
-
-
S8050
WEITRON
http://www.weitron.com.tw
(IC= 50 Adc, VCE=1.0 Vdc)
DC Current Gain
DC Current Gain
(IC= 500 mAdc, VCE= 1.0 Vdc)
85
300
(1)
(2)
50
0.6
1.2
-
Classification of hFE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
TYP
-
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