WEITRON
http://www.weitron.com.tw
WT4433AM
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
,Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT4433AM=STM4433A
Surface Mount P-Channel
D
8
7
6
5
1
2
3
4
D
D
D
S
S
S
G
SO-8
DRAIN CURRENT
-6 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SO-8 Package
R <35 m @V = -10V
-30
20
-6
-30
2.5
-1.7
50
Enhancement Mode MOSFET
DS(ON)
GS
R <55 m @V = -4.5V
DS(ON)
GS
J
(2)
(1)
(1)
(1)
29-Jun-05
1/6
Lead(Pb)-Free
P b
WEITRON
http://www.weitron.com.tw
WT4433AM
Input Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=-15V, V
GS
=-10V, I
D
=-5.8A
V
DS
=-15V, V
GS
=-4.5V, I
D
=-5.8A
V
DS
=-15V, V
GS
=-10V, I
D
=-5.8A
V
DS
=-15V, V
GS
=-10V, I
D
=-5.8A
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=-250 uA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 20V
Drain-Source On-Resistance
V
GS
=-10V, I
D
=-5.8A
On-State Drain Current
V
DS
=-5V, V
GS
=-10V
Forward Transconductance
V
DS
=-15V, I
D
=-5.8A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
R
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
-30
-
V
-1
-1.9
-3.0
V
-
-
-
-
-
-1
100
nA
m
uA
A
S
21
40
5
3
55
920
270
170
F
P
8.6
36.9
36.3
17.5
9.4
-
-
2.9
4.8
-0.77
-1.2
nS
nS
nS
nS
nc
nc
nc
V
-
35.3
-
Electrical Characteristics
(T
A
=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
-
-
-
8.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : Pulse Width
300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
V
GS
=-4.5V, I
D
=-2.0A
V
D
=-15V, V
GEN
=-10V,
I
D
=-1A, R
GEN
=6
V
D
=-15V, V
GEN
=-10V,
I
D
=-1A, R
GEN
=6
V
D
=-15V, V
GEN
=-10V,
I
D
=-1A, R
GEN
=6
V
D
=-15V, V
GEN
=-10V,
I
D
=-1A, R
GEN
=6
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-1.7A
29-Jun-05
2/6
WEITRON
http://www.weitron.com.tw
WT4433AM
WEITRON
WEITRON
DS
-V , DRAIN-TO-SOURCE VOLTAGE(V)
-I ,DRAIN CURRENT(A)
D
FIG.1. Output Characteristics
0 5 10 15 20 25 30
1500
1250
1000
750
250
0
20
16
12
8
4
0
0.5
0
1.0
1.5
2.0
2.5
3.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-55 -25 0 25 50 75 100 125
25
20
15
10
5
0
0.0 0.8 1.6
2.4
3.2
4.0 4.8
-50 -25 0
25 50 75 100 125 150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.3
1.2
1.1
1.0
0.8
0.6
0.4
-50 -25
0 25 50
75 100 125 150
FIG.2 Transfer Characteristics
FIG.3 Capacitance
Coss
Ciss
Crss
-55 C
25 C
-V , GATE-TO-SOURCE VOLTAGE(V)
GS
-V , DRAIN-TO-SOURCE VOLTAGE(V)
DS
Tj , DRAIN CURRENT(C)
C ,CAP
ACIT
ANCE( F)
R , ON-RESIST
ANCE(
)
(Normalived)
-I , DRAIN CURRENT(A)
D
DS(ON)
P
FIG.5 Gate Threshold Variation
with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
GA
TE-SOURCE THRESHOLD V
OL
T
AGE(V)
V
,NORMALIZED
BV
,NORMALIZED
DRAIN-SOURCE BREAKDOWN V
OL
T
AGE(V)
th
DSS
125 C
V = -10V
GS
V =V
DS
I = -250uA
D
GS
I = -250uA
D
-V
GS
=2V
-V
GS
=3V
-V
GS
=3.5V
-V
GS
=4V
-V
GS
=4.5V
-V
GS
=10V
I
D
= -5.8A
FIG.4 On-Resistance Variation with
Temperature
29-Jun-05
3/6
WEITRON
http://www.weitron.com.tw
WT4433AM
WEITRON
WEITRON
FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
-I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
-V ,BODY DIODE FORWARD VOLTAGE(V)
DS
-V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
-I , DRAIN CURRENT(A)
g ,TRANSCONDUCT
ANCE(S)
-V
,GA
TE T
O SOURCE V
OL
T
AGE(V)
-I ,SOURCE-DRAIN CURRENT(A)
FS
GS
S
D
20.0
10.0
1
0.4
0.6
0.7
0.9
1.1
1.3
8
10
6
4
2
0
0 3 6 9 12 15 18 21 24
50
10
1
0.1
0.03
0.1
1
10
30 50
15
12
9
6
0
0
5
10
15
20
3
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
V = -15V
DS
I = -5.8A
D
V = -15V
DS
T =25 C
A
V = -10V
10ms
100ms
1s
DC
R
DS
(ON)Limit
Single Pulse
GS
-V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
INVERTED
PULSE WIDTH
INVERTED
29-Jun-05
4/6
WEITRON
http://www.weitron.com.tw
WT4433AM
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
T
N
E
I
S
N
A
R
T
D
E
Z
I
L
A
M
R
O
N
,)
t
(
r
E
C
N
A
T
S
I
S
E
R
L
A
M
R
E
H
T
0.01
0.1
1
2
0.0001
0.001
0.01
0.1
1
10
100
Duty Cycle=0.5
0.2
0.1
0.05
0.02
P
DM
t
1
t
2
1. R j
A
(t)=r (t) * R j
2. R j =See Datasheet
3. T
JM
-T
A
= P
DM
* R
J
(t)
4. Duty Cycle, D=t /t
1 2
A
A
A
Single Pulse
29-Jun-05
5/6
WT4433AM
SO-8 Package Outline Dimensions
Unit:mm
WEITRON
http://www.weitron.com.tw
1
(4X)
B
eB
E1
L
7(4X)
2A
A1
A
C
SYMBOLS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
1.27 BSC
0.60
0
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
0.80
8
MILLIMETERS
A
A1
B
C
D
E1
eB
e
L
7
D
e
29-Jun-05
6/6
PDF 
ZIP