WEITRON
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WT-3401
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
, Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT3401=T01
Surface Mount P-Channel
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SOT-23 Package
R <75 m @V =-10V
-30
20
-3
-10
1.25
-1.25
100
-
+
Enhancement Mode MOSFET
DS(ON)
GS
R <100 m @V =-4.5V
DS(ON)
GS
J
(2)
(1)
(1)
(1)
DRAIN CURRENT
- 3 AMPERES
DRAIN SOURCE VOLTAGE
- 30 VOLTAGE
WEITRON
http://www.weitron.com.tw
WT-3401
Input Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=-15V, I
D
=-3A, V =-10V
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=-250 uA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 20V
Drain-Source On-Resistance
V
GS
=-10V, I
D
=-3.0A
On-State Drain Current
V
DS
=-5V, V
GS
=-10A
Forward Transconductance
V
DS
=-5V, I
D
=-3A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qg
Qgs
Qgd
-30
-
V
-1
-1.5
-2.5
V
-
-
-
-
-
-1
100
nA
m
uA
A
S
75
100
653
130
97
F
P
13
58
26
13.5
7
2.3
2.8
-0.8
-1.2
nS
nS
nS
nS
nc
nc
nc
nc
V
-
7
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
-
-
-
-
-
5
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Delay Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
V
GS
=-4.5V, I
D
=-2.0A
GEN
V =-10V,V =-15V, I =-1A, R =15 ,R =6
DD
GS
D
L
GS
Total Gate Charge
V
DS
=-15V, I
D
=-3A, V =-4.5V
GS
Gate-Source Charge
V
DS
=-15V, I
D
=-3A, V =-10V
GS
Gate-Drain Charge
V
DS
=-15V, I
D
=-3A, V =-10V
Drain-Source Diode Forward Voltage
GS
V
GS
=0V, I
S
=-1.25A
<_
<_
<_
GEN
V =-10V,V =-15V, I =-1A, R =15 ,R =6
DD
GS
D
L
GEN
V =-10V,V =-15V, I =-1A, R =15 ,R =6
DD
GS
D
L
GEN
V =-10V,V =-15V, I =-1A, R =15 ,R =6
DD
GS
D
L
WEITRON
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WT-3401
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DS
-V , DRAIN-TO-SOURCE VOLTAGE(V)
-I ,DRAIN CURRENT(A)
D
FIG.1. Output Characteristics
0 5 10 15 20 25 30
1000
800
600
400
200
0
20
16
12
8
4
0
0
2
4
6
8
10
12
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
-25
25
75
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125
1.10
1.07
1.04
1.00
0.97
0.94
0.91
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
FIG.2 Transfer Characteristics
FIG.4 On-Resistance Variation with
Temperature
FIG.3 Capacitance
Coss
Ciss
Crss
-55 C
25 C
-V , GATE-TO-SOURCE VOLTAGE(V)
GS
-V , DRAIN-TO-SOURCE VOLTAGE(V)
T ( C)
DS
j
C ,CAPACITANCE( F)
R , ON-RESISTANCE(
)
-I , DRAIN CURRENT(A)
D
DS(ON)
P
FIG.5 Gate Threshold Variation
with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
GATE-SOURCE THRESHOLD VOLTAGE(V)
V ,NORMALIZED
BV ,NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE(V)
th
DSS
-V =10,9,8,7,6V
GS
-V =5V
GS
-V =4V
GS
-V =3V
GS
Tj =125 C
V =-10V
GS
I =-3A
D
V =V
DS
I =-250uA
D
GS
I =-250uA
D
WEITRON
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WT-3401
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FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
-I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
-V ,BODY DIODE FORWARD VOLTAGE(V)
DS
-V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
-I , DRAIN CURRENT(A)
g ,TRANSCONDUCTANCE(S)
-V ,GATE TO SOURCE VOLTAGE(V)
-I ,SOURCE-DRAIN CURRENT(A)
FS
GS
S
D
20
10
0
1
0.4
0.8
1.2
1.6
2.0
0
8
10
6
4
2
0
0
2 4 6
8
10 12 16 20
50
10
1
0.1
0.03
0.1
1
10 20
50
10
8
6
4
12
0
0
5
10
15
20
25
2
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
V =-5V
DS
T
J
=25 C
I =-3A
D
V =-15V
DS
1
R
DS
(ON
) L
imi
t
10m
s
100
ms
1s
DC
T =25 C
C
V =-10V
Single Pulse
DS
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
INVE R TE D
WEITRON
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WT-3401
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SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
NORMALIZED TRANSIENT
THERMAL RESISTANCE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse
on
P
DM
t
1
t
2
0.01
0.02
0.5
0.2
0.1
0.05
1. R j
A
(t)=r (t) * R j
2. R j =See Datasheet
3. Tj
M
-TA = P
DM
* R j (t)
4. Duty Cycle, D=t /t
1
2
A
A
A
WT-3401
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
T OP V IE W
K
C
SOT-23 Package Outline Dimensions
Unit:mm
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