WEITRON
http://www.weitron.com.tw
WT4410M
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
,Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT4410M=SDM4410
Surface Mount N-Channel
D
8
7
6
5
1
2
3
4
D
D
D
S
S
S
G
SO-8
1
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SO-8 Package
R <11 m @V =10V
30
20
10
30
2.5
2.3
50
-
+
Enhancement Mode MOSFET
DS(ON)
GS
R <15 m @V =4.5V
DS(ON)
GS
J
(2)
(1)
(1)
(1)
1/6
01-Jul-05
Lead(Pb)-Free
P b
DRAIN CURRENT
10 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
WEITRON
http://www.weitron.com.tw
WT4410M
Input Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=10V, I
D
=10A, V =10V
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=250 uA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 16V
Drain-Source On-Resistance
V
GS
=10V, I
D
=10A
On-State Drain Current
V
DS
=10V, V
GS
=10A
Forward Transconductance
V
DS
=10V, I
D
=20A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
30
-
V
1
1.5
3
V
-
-
-
-
-
1
100
nA
m
uA
A
S
11
15
13.5
20
1375
670
200
F
P
30
132
30
40
20
50
24
8.2
5.3
0.76
1.1
nS
nS
nS
nS
nc
nc
nc
V
-
32
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
-
-
-
18
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
V
GS
=4.5V, I
D
=5A
GEN
=10V,V =15V, I =-1A, R =6
DD
D
V
GS
GEN
=10V,V =15V, I =-1A, R =6
DD
D
V
GS
GEN
=10V,V =15V, I =-1A, R =6
DD
D
V
GS
GEN
=10V,V =15V, I =-1A, R =6
DD
D
V
GS
GS
GS
Gate-Source Charge
V
DS
=10V, I
D
=10A, V =10V
GS
Gate-Drain Charge
V
DS
=10V, I
D
=10A, V =10V
Drain-Source Diode Forward Voltage
GS
V
GS
=0V, I
S
=2.3A
<_
<_
<_
V
DS
=10V, I
D
=10A, V =4.5V
2/6
01-Jul-05
WEITRON
http://www.weitron.com.tw
WT4410M
WE IT R ON
DS
V , DRAIN-TO-SOURCE VOLTAGE(V)
I ,DRAIN CURRENT(A)
D
FIG.1. Output Characteristics
0 5 10 15 20 25 30
1500
1200
900
600
300
0
25
20
15
10
5
0
0.5
0
1
1.5
2
2.5
3
0.030
0.025
0.020
0.015
0.010
0.005
0
0
10
20
5
15
25
20
15
10
5
0
0.0
1.0 2.0
3.0
4.0
5.0 6.0
-50 -25 0 25 50 75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25 0 25 50 75 100 125 150
FIG.2 Transfer Characteristics
FIG.4 On-Resistance Variation with
Drain Current and Temperature
FIG.3 Capacitance
Coss
Ciss
Crss
-55 C
-55 C
25 C
25 C
V , GATE-TO-SOURCE VOLTAGE(V)
GS
V , DRAIN-TO-SOURCE VOLTAGE(V)
DS
I , DRAIN CURRENT(A)
D
C ,CAPACITANCE( F)
R , ON-RESISTANCE(
)
I , DRAIN CURRENT(A)
D
DS(ON)
P
FIG.5 Gate Threshold Variation
with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
GATE-SOURCE THRESHOLD VOLTAGE(V)
V ,NORMALIZED
BV ,NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE(V)
th
DSS
V =10,9,8,7,6,5,4V
GS
V =3V
GS
T =125 C
j
T =125 C
j
V =10V
GS
V =V
DS
I =250uA
D
GS
I =-250uA
D
3/6
01-Jul-05
WEITRON
http://www.weitron.com.tw
WT4410M
WE IT R ON
FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
V ,BODY DIODE FORWARD VOLTAGE(V)
DS
V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
I , DRAIN CURRENT(A)
g ,TRANSCONDUCTANCE(S)
V ,GATE TO SOURCE VOLTAGE(V)
I ,SOURCE-DRAIN CURRENT(A)
FS
GS
S
D
40.0
10.0
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
5 10 15 20 25
30 35 40
40
10
1
0.1
0.03
0.1
1
10
30 50
25
20
15
10
0
0
5
10
15
20
5
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
V =15V
DS
I =40A
D
V =10V
DS
1
10m
s
100m
s
1s
DC
R (ON)Limit
DS
T =25 C
C
V =10V
Single Pulse
DS
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
INVE R TE D
4/6
01-Jul-05
WEITRON
http://www.weitron.com.tw
WT4410M
WE IT R ON
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
,NORMALIZED TRANSIENT
r(t)
THERMAL RESISTANCE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Duty Cycle=0.5
0.2
0.1
0.05
0.02
P
DM
t
1
t
2
1. R j
A
(t)=r (t) * R j
2. R j =See Datasheet
3. Tj
M
-TA = P
DM
* R j (t)
4. Duty Cycle, D=t /t
1
2
A
A
A
Single Pulse
5/6
01-Jul-05
WT4410M
SO-8 Package Outline Dimensions
Unit:mm
WEITRON
http://www.weitron.com.tw
1
(4X)
B
eB
E1
L
7(4X)
2A
A1
A
C
SYMBOLS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
1.27 BSC
0.60
0
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
0.80
8
MILLIMETERS
A
A1
B
C
D
E1
eB
e
L
7
D
e
6/6
01-Jul-05
PDF 
ZIP