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Электронный компонент: WTC2309

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WEITRON
http:www.weitron.com.tw
DRAIN CURRENT
-3.7 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R
DS(ON)
R
DS(ON)
<75m @V
GS
=-10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
Maximum Ratings
(
(T
T
A
A
=
=2
25
5
U
Un
nlle
es
ss
s O
Otth
he
errw
wiis
se
e S
Sp
pe
ec
ciiffiie
ed
d))
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
3
-3.7
I
D
-3.0
Pulsed Drain Current
1,2
I
DM
-12
A
C
Total Power Dissipation(T
A
=25C)
,(T
A
=25C)
,(T
A
=70C)
P
D
1.38
W
Maximum Thermal Resistance Junction-ambient
3
R
JA
90
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Device Marking
WTC2309=2309
WTC2309
P-Channel Enhancement
Mode Power MOSFET
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
23-May-05
1/6
WEITRON
http:www.weitron.com.tw
Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=-250A
V
(BR)DSS
-30
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=-250A
V
GS(Th)
-1.0
V
Gate-Source Leakage Current
V
GS
= 20V
I
GSS
-
-
100
nA
-
-
-
-
-
-3.0
-1
Drain- Sou rce Leakage Current(T
j
=25C)
V
DS
=-30V,V
GS
=0
Drain- Sou rce Leakage Current(T
j
=55C)
V
DS
=-24V,V
GS
=0
I
DSS
-
-
-25
A
Drain-Source On-Resistance
2
V
GS
=-10V,I
D
=-3.0A
V
GS
=-4.5V,I
D
=-2.6A
R
DS(o n)
-
-
-
-
75
120
m
Forward Transconductance
V
DS
=-10V, I
D
=-3A
g
fs
-
5.0
-
S
Dynamic
Input Capacitance
C
iss
-
660
Output Capacitance
C
oss
-
91
412
62
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=-25V,f=1.0MHz
V
GS
=0V,V
DS
=-25V,f=1.0MHz
V
GS
=0V,V
DS
=-25V,f=1.0MHz
C
rss
-
-
-
pF
2/6
23-May-05
WTC2309
Switching
Turn-on Delay Time
2
V
DS
=-15V,V
GS
=-10V,I
D
=-1A,R
D
=15 ,R
G
=3.3
V
DS
=-15V,V
GS
=-10V,I
D
=-1A,R
D
=15 ,R
G
=3.3
V
DS
=-15V,V
GS
=-10V,I
D
=-1A,R
D
=15 ,R
G
=3.3
V
DS
=-15V,V
GS
=-10V,I
D
=-1A,R
D
=15 ,R
G
=3.3
V
DS
=-24V,V
GS
=-4.5V,I
D
=-3A
V
DS
=-24V,V
GS
=-4.5V,I
D
=-3A
V
DS
=-24V,V
GS
=-4.5V,I
D
=-3A
t
d
(on)
-
8
-
Rise Time
tr
-
5
Turn-off Delay Time
t
d
(off)
-
-
20
7
Fall Time
tf
-
-
ns
Total Gate Charge
2
Q
g
-
Gate-Source Charge
Q
gs
-
1
5
3
Gate-Drain Change
Q
gd
-
-
8
-
-
nC
V
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V,I
S
=-1.2A
V
GS
=0V,I
S
=-3.0A,dl/dt=100A/s
V
GS
=0V,I
S
=-3.0A,dl/dt=100A/s
V
SD
-
-
- 1.2
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
T
rr
-
-
Q
rr
-
20
15
-
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270/W when mounted on min, copper pad.
3/6
23-May-05
WEITRON
http:www.weitron.com.tw
WTC2309
WEITRON
http://www.weitron.com.tw
WTC2309
-V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
-
D
)
A
(

T
N
E
R
R
U
C
N
I
A
R
D
,
I
)
A
(

t
n
e
r
r
u
C

n
i
a
r
D
,
-V
DS
,Drain-to-source Voltage(V)
FIG.1 Typical Output Characteristics
-V
GS
,Gate-to-source Voltage(V)
R
)
N
O
(
S
D
)
m
(
85
75
105
95
65
55
1 3 5 7 9
Fig.3 On-Resistance v.s. Gate Voltage
R

d
e
z
i
l
a
m
r
o
N
)
n
o
(
s
D
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
Fig.4 Normalized On-Resistance
Fig.2 Typical Output Characteristics
I
D
= -2.6A
T
A
= 25C
-V
DS
,Source-to-Drain Voltage(V)
I
-
)
A
(
s
3
1
2
0
0 0.2 0.4 0.6 0.8 1 1.2
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
V
-
d
e
z
i
l
a
m
r
o
N
)
h
t
(
S
G
)
V
(
1.3
1.1
0.9
0.7
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= 3A
V
G
= 10V
T
j
= 25C
T
j
= 150C
-10V
-7.0V
-5.0V
-4.5V
VG= -3.0V
40
45
35
30
25
20
15
10
5
0
0 2 4 6 8 10
TA=25C
-10V
-7.0V
-5.0V
-4.5V
VG= -3.0V
40
45
35
30
25
20
15
10
5
0
0 2 4 6 8 10
TA=150C
4/6
23-May-05
WEITRON
http://www.weitron.com.tw
WTC2309
Q
G
, Total Gate Charge(nC)
V
-
S
G

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e
(
V
)
10
12
6
8
2
4
0
0 2 4 6 8
Fig 7. Gate Charge Characteristics
-V
DS
, Drain-to-Source Voltage(V)
I
-
D
)
A
(
100
10
1
0.1
0.01
0.1 1 10 100
Fig 9. Maximum Safe Operation Area
Fig.11 Switching Time Waveform
Fig.12 Gate Charge Waveform
T
A
= 25C
Single Pulse
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
1ms
10ms
100ms
Is
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R

l
a
m
r
e
h
T

d
e
z
i
l
a
m
r
o
N
a
j
)
1
0.1
0.01
0.001
0.0001 0.001 0.01 0.1
1 10
100 1000
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
-V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
1000
100
10
1 5 9 13 17 21 25 29
Fig 8. Typical Capacitance Characteristics
0.2
0.1
0.05
0.01
Single pulse
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
ja
+ T
a
R
ja
=270C / W
t
T
Crss
Coss
Ciss
VG
-4.5V
Q
G
Q
GS
Q
GD
Charge
Q
5/6
23-May-05
V
DS
= -24V
I
D
= -3A
f = 1.0MHz
WEITRON
http://www.weitron.com.tw
WTC2309
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
SOT-23
SOT-23 Outline Dimension
6/6
23-May-05