Document Outline
- Switching1.doc
- WTN9973-4.pdf
- WTN9973-5.pdf
- WTN9973-6.pdf
- Switchinga.pdf
WEITRON
http:www.weitron.com.tw
DRAIN CURRENT
3 AMPERS
DRAIN SOUCE VOLTAGE
60 VOLTAGE
Features:
*Super High Dense Cell Design For Low R
DS(ON)
R
DS(ON)
<90m
@V
GS
=10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
Maximum Ratings
(
(T
T
A
A
=
=2
25
5
U
Un
nlle
es
ss
s O
Otth
he
errw
wiis
se
e S
Sp
pe
ec
ciiffiie
ed
d))
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
3
,V
GS
@10V(T
A
3.0
,V
GS
@10V(T
A
I
D
2.3
Pulsed Drain Current
1,2
I
DM
10
A
Total Power Dissipation(T
A
=25
)
P
D
1.38
W
Maximum Junction-ambient
3
R
JA
90
/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Device Marking
WTC2310=2310
WTC2310
N-Channel Enhancement
Mode Power MOSFET
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
1/6
05-May-05
WTC2310
WEITRON
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Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=250A
V
(BR)DSS
60
-
-
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=250
A
V
GS(Th)
1.0
-
3.0
V
Gate-Source Leakage Current
V
GS
= 20V
I
GSS
-
-
100
nA
-
-
10
Drain-Source Leakage Current(T
j
=25)
V
DS
=60V,V
GS
=0
Drain-Source Leakage Current(T
j
=70)
V
DS
=48V,V
GS
=0
I
DSS
-
-
25
A
Drain-Source On-Resistance
V
GS
=10V,I
D
=3A
V
GS
=4.5V,I
D
=2A
R
DS(on)
-
-
-
-
90
120
m
Forward Transconductance
V
DS
=5V,I
D
=3 A
g
fs
-
5.0
-
S
Dynamic
Input Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
iss
-
490
780
Output Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
oss
-
55
-
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
rss
-
40
-
pF
2/6
05-May-05
WTC2310
Switching
Turn-on Delay Time
2
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
t
d
(on)
-
6
-
Rise Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
tr
-
5
-
Turn-off Delay Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
t
d
(off)
-
16
-
Fall Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
tf
-
3
-
ns
Total Gate Charge
2
V
DS
=48V,V
GS
=4.5V,I
D
=3A
Q
g
-
6
10
Gate-Source Charge
V
DS
=48V,V
GS
=4.5V,I
D
=3A
Q
gs
-
1.6
-
Gate-Drain Change
V
DS
=48V,V
GS
=4.5V,I
D
=3A
Q
gd
-
3
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V,I
S
=1.2A
V
SD
-
-
1.2
V
Reverse Recovery Time
V
GS
=0V,I
S
=3A, dl/dt=100A/s
Trr
-
25
-
ns
Reverse Recovery Charge
V
GS
=0V,I
S
=3.9A,dl/dt=100A/s
Qrr
-
26
-
nC
Note: 1. Pulse width limited by max, junction temperature.
2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270/W when mounted on min, copper pad.
3/6
05-May-05
WEITRON
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WEITRON
http://www.weitron.com.tw
WTC2310
V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
D
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
I
D
)
A
(
t
n
e
r
r
u
C
n
i
a
r
D
,
V
DS
,Drain-to-source Voltage(V)
FIG.1 Typical Output Characteristics
V
GS
,Gate-to-source Voltage(V)
R
)
n
o
(
s
D
)
m
(
105
99
93
87
81
75
2 4 6 8 10
Fig.3 On-Resistance v.s. Gate Voltage
R
d
e
z
i
l
a
m
r
o
N
)
n
o
(
s
D
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
Fig.4 Normalized OnResistance
Fig.2 Typical Output Characteristics
I
D
= 2A
T
A
= 25C
V
DS
,Source-to-Drain Voltage(V)
I
s
)
A
(
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
Normalized V
GS(th)
(V)
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= 3A
V
G
= 10V
T
j
= 25C
T
j
= 150C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
10
8
6
4
2
0
0 1 2 3 4 5
TA=25C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
10
8
6
4
2
0
0 1 2 3 4 5
TA=150C
4/6
05-May-05
WEITRON
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WTC2310
Q
G
, Total Gate Charge(nC)
V
S
G
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
14
12
10
8
6
4
2
0
0 3 6 9 12 15
Fig 7. Gate Charge Characteristics
V
DS
= 30V
V
DS
= 38V
V
DS
= 48V
I
D
= 3A
V
DS
, Drain-to-Source Voltage(V)
I
D
)
A
(
100,000
10,00
1,000
0.100
0.010
0.001
0.1 1 10 100 1000
Fig 9. Maximum Safe Operation Area
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
T
A
= 25C
Single Pulse
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
1ms
100us
10ms
100ms
Is
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
d
e
z
i
l
a
m
r
o
N
a
j
)
1
0.1
0.01
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
1000
100
0
1 5 9 13 17 21 25 29
Fig 8. Typical Capacitance Characteristics
f = 1.0MHz
0.2
0.1
0.05
0.01
Single pulse
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
ju
+ T
u
R
ja
=270C / W
t
T
Crss
Coss
Ciss
VG
4.5V
Q
G
Q
GS
Q
GD
Charge
Q
5/6
05-May-05
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