Document Outline
- Switching1.doc
- WTN9973-4.pdf
- WTN9973-5.pdf
- WTN9973-6.pdf
- Switchinga.pdf
WEITRON
http:www.weitron.com.tw
1/6
19-Apr-05
DRAIN CURRENT
3.9 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
Features:
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOT-223
*
*S
Su
up
pe
err h
hiig
gh
h d
de
en
ns
se
e c
ce
ellll d
de
es
siig
gn
n ffo
orr llo
ow
w R
R
D
DS
S((O
ON
N))
R
R
D
DS
S((O
ON
N))
<
<8
80
0m
m
@
@V
V
G
GS
S
=
=1
10
0V
V
*
*S
Siim
mp
plle
e D
Drriivve
e R
Re
eq
qu
uiirre
em
me
en
ntt
*
*L
Lo
ow
w G
Ga
atte
e C
Ch
ha
arrg
ge
e
*
*S
SO
OT
T-
-2
22
23
3 P
Pa
ac
ck
ka
ag
ge
e
Maximum Ratings
(
(T
T
A
A
=
=2
25
5
U
Un
nlle
es
ss
s O
Otth
he
errw
wiis
se
e S
Sp
pe
ec
ciiffiie
ed
d))
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
3
,VGS@10V(T
A
=25)
3.9
,VGS@10V(T
A
=70)
I
D
2.5
Pulsed Drain Current
1,2
I
DM
20
A
Total Power Dissipation(T
A
=25
)
P
D
2.7
W
Maximum Junction-ambient
3
R
JA
45
/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Device Marking
WTN9973=9973
WTN9973
1
2,4
3
GATE
SOURCE
DRAIN
1
2
3
4
Surface Mount N-Channel
Enhancement Mode Power MOSFET
WTN9973
WEITRON
http:www.weitron.com.tw
2/6
19-Apr-05
Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=250A
V
(BR)DSS
60
-
-
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=250
A
V
GS(Th)
1.0
-
3.0
V
Gate-Source Leakage Current
V
GS
= 20V
I
GSS
-
-
100
nA
-
-
1
Drain-Source Leakage Current(T
j
=25)
V
DS
=60V,V
GS
=0
Drain-Source Leakage Current(T
j
=70)
V
DS
=48V,V
GS
=0
I
DSS
-
-
25
A
Drain-Source On-Resistance
2
V
GS
=10V,I
D
=3.9A
V
GS
=4.5V,I
D
=2A
R
DS(on)
-
-
-
-
80
100
m
Forward Transconductance
V
DS
=10V,I
D
=3.9A
g
fs
-
3.5
-
S
Dynamic
Input Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
iss
-
700
1120
Output Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
oss
-
80
-
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=25V,f=1.0MHz
C
rss
-
50
-
pF
WTN9937
WEITRON
http:www.weitron.com.tw
3/6
19-Apr-05
Switching
Turn-on Delay Time
2
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
t
d
(on)
-
8
-
Rise Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
tr
-
4
-
Turn-off Delay Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
t
d
(off)
-
20
-
Fall Time
V
DS
=30V,V
GS
=10V,I
D
=1A,R
D
=30,R
G
=3.3
tf
-
6
-
ns
Total Gate Charge
2
V
DS
=48V,V
GS
=4.5V,I
D
=3.9A
Q
g
-
8
13
Gate-Source Charge
V
DS
=48V,V
GS
=4.5V,I
D
=3.9A
Q
gs
-
2
-
Gate-Source Change
V
DS
=48V,V
GS
=4.5V,I
D
=3.9A
Q
gd
-
4
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V,I
S
=3.9A
V
SD
-
-
1.2
V
Reverse Recovery Time
V
GS
=0V,I
S
=3.9A,dl/dt=100A/s
Trr
-
28
-
ns
Reverse Recovery Charge
V
GS
=0V,I
S
=3.9A,dl/dt=100A/s
Qrr
-
35
-
nC
Note: 1. Pulse width limited by max, junction temperature.
2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135/W when mounted on min, copper pad.
WEITRON
http://www.weitron.com.tw
WTN9973
4/6 19-Apr-05
V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
D
,DRAIN CURRENT
(A)
I
D
,Drain Current (A)
V
DS
,Drain-to-source Voltage(V)
10V
6.0V
5.0V
4.5V
10V
6.0V
5.0V
4.5V
V
G
=3.0V
V
G
=3.0V
TA=25C
TA=160C
40
35
30
25
20
15
10
5
0
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8
0 1 2 3 4 5 6 7 8
FIG.1 Typical Output Characteristics
V
GS
,Gate-to-source Voltage(V)
R
Ds(on)
(m)
95
90
85
80
75
70
3 5 7 9 11
Fig.3 On-Resistance v.s. Gate Voltage
Normalized R
Ds(on)
2.5
2.0
1.5
1.0
0.5
0.0
-50 0 50 100 150
Fig.4 Normalized OnResistance
Fig.2 Typical Output Characteristics
I
D
= 3.9A
T
A
= 25C
V
DS
,Source-to-Drain Voltage(V)
R
Ds(on)
(m)
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
R
Ds(on)
(m)
2.5
2.0
1.5
1.0
0.5
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= 3.9A
V
G
= 10V
T
j
= 25C
T
j
= 150C
WEITRON
http://www.weitron.com.tw
WTN9973
5/6 19-Apr-05
Q
G
, Total Gate Charge(nC)
V
S
G
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
,
14
12
10
8
6
4
2
0
0 4 8 12 16 20
Fig 7. Gate Charge Characteristics
V
DS
= 30V
V
DS
= 38V
V
DS
= 48V
I
D
= 3.9A
V
DS
, Drain-to-Source Voltage(V)
I
D
)
A
(
100
10
1
0.1
0.01
0.1 1 10 100 1000
Fig 9. Maximum Safe Operation Area
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
T
A
= 25C
Single Pulse
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
1ms
10ms
100ms
Is
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
d
e
z
i
l
a
m
r
o
N
a
j
)
1
0.1
0.01
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
10000
1000
100
0
1 5 9 13 17 21 25 29
Fig 8. Typical Capacitance Characteristics
f = 1.0MHz
0.2
0.1
0.05
0.02
0.01
Single pulse
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
ju
+ T
u
R
ja
=135C / W
t
T
Crss
Coss
Ciss
VG
4.5V
Q
G
Q
GS
Q
GD
Charge
Q
PDF 
ZIP