GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor Diodes - Capsule Type
V
RRM
V
RSM
Range
I
F(AV)
T
sink
= 55
o
C
I
F(d.c.)
at
T
sink
= 25
o
C
I
F(RSM)
T
sink
= 25
o
C
I
FSM
10ms
V
RM
= 0.6
RRM
I
FSM2
10ms
V
RM
10V
I
2
t 10ms
V
RM
10V
I
RRM
V
o
r
s
Wt
(Typ)
Mounting
Force
Outline
No.
(Note 1)
(Note 2)
(Note 4)
(Note 2)
(Note 5)
(Note 5)
(Note 5)
(V)
(A)
(A)
(A)
(A)
(A)
(A
2
s)
(mA)
(V)
(m
)
(V)
(A)
DSC
(K/W)
SSC
(K/W)
(g)
(kN)
F0040BC18
Y
F0400LC180
1800
775
1304
1545
7630
8400
353 x 10
3
150
1.1494
0.692
2.88
400
0.032
0.064
340
10.0 - 20.0
100A243
F0140NC18
Y
F1400NC180
1800
1093
1359
2206
17250
1900
1.81 x 10
6
275
1.618
0.388
2.46
1400
0.024
0.048
510
19.0 - 26.0
100A249
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Limited. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Note 1
De-rating factor of 0.13% per degree centigrade is applicable for T
j
below 25
o
C
Note 2
Double side cooled, single phase; 50Hz, 180
o
half-sinewave
Note 3
Single side cooled, single phase; 50Hz, 180
o
half-sinewave
Note 4
Double side cooled
Note 5
Half-sinewave, 125
o
C T
j
initial
Note 6
Current (I
F
) ratings have been calculated using V
o
and r
s
V
FM
at I
FM
@ Tj
Max.
Old Part
Number
PDF Data
Sheet
Available
New Part Number
Rth(j-hs)
PDF 
ZIP