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Электронный компонент: T1400TA18A

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GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor - Capsule Type
V
CES
V
GES
I
C
(Note
2)
I
CRM
(Note 2)
I
F
I
FRM
P
MAX
T
j
(Note 3)
T
stg
Wt (Typ)
Mounting Force
(V)
(V)
(A)
(A)
(A)
(A)
(W)
(
o
C)
(
o
C)
Double
(K/kW)
Collector
(K/kW)
Emitter
(K/kW)
Double
(K/kW)
Cathode
(K/kW)
Anode (K/kW)
(g)
(kN)
WTC40AAC18
Y
T0400NA18A
1800
+/- 20
400
800
400
800
1800
-60 to +150
-60 to +150
55
90
140
84
138
218
50
8.0 - 12.0
n/a
WTC140AAC18
Y
T1400TA18A
1800
+/- 20
1400
2800
1400
2800
6600
-60 to +150
-60 to +150
15
25
39
35
52
104
120
20.0 - 30.0
n/a
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Limited. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Note 1
Unless otherwise indicated, T
j
= 125
o
C
Note 2
T
C
= 90
o
C
Note 3
For operation below -40
o
C or above +125
o
C, please contact the Factory.
Note 4
Please refer to data sheets for outline drawings
Rth(j-hs) (Diode)
Old Part Number
New Part Number
PDF Data
Sheet
Available
Outine No.
(Note 4)
Rth(j-hs) (IGBT)