Advance Information W19B320ST/B
4M
8/2M 16 3V FLASH MEMORY
- 1 -
GENERAL DESCRIPTION
The W19B320ST/B is a 32Mbit, 2.7~3.6 volt CMOS flash memory organized as 4M
8 or 2M
16 bits. For flexible erase capability, the 32 Mbits of data are divided into eight 8KB, and
sixty-three 64KB sectors. The word-wide (
16) data appears on DQ15-DQ0, and byte-wide
(
8) data appears on DQ7-DQ0. The device can be programmed and erased in-system with
a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture
of the W19B320ST/B results in fast program/erase operations with extremely low current
consumption (compared to other comparable 3-volt flash memory products). The device can
also be programmed and erased by using standard EPROM programmers.
FEATURES
Performance
2.7~3.6-volt write (program and erase)
operations
Fast write operation
Read access time: 70, 90 nS
Typical program/erase cycles:
- 100K
Twenty-year data retention
Ultra low power consumption
Architecture
Sector erase architecture
- Eight 8KB, and sixty-three 64KB
sectors
- Top or bottom boot block
configurations available
- Supports full chip erase
Security Sector Size: 256 Bytes
- The Security Sector is an OTP; once the
sector is programmed, it cannot be
erased
JEDEC standard byte-wide and word-
wide pinouts
TTL compatible I/O
Manufactured on WinStack 0.18 m
process technology
Available packages: 48-pin TSOP and
48-ball TFBGA (8x11mm)
Software Features
Compatible with common Flash Memory
Interface (CFI) specification
- Flash device parameters stored
directly on the device
- Allows software driver to identify and
use a variety of different current and
future Flash products
Erase Suspend/Erase Resume
- Suspends erase operations to allow
programming in same bank
End of program detection
- Software method: Toggle bit/Data
polling
Unlock Bypass Program command
- Reduces overall programming time
when issuing multiple program
command sequences
Hardware Features
Ready/#Busy output (RY/#BY)
- Detect program or erase cycle
completion
Hardware reset pin (#RESET)
- Reset the internal state machine to the
read mode
#WP/ACC input pin
- Write protect (#WP) function allows
protection of two outermost boot
sectors, regardless of sector protect
status
- Acceleration (ACC) function
accelerates program timing
Sector Protection
- Sectors can be locked in-system or via
programmer
- Temporary Sector Unprotect allows
changing data in protected sectors in-
system
Advance Information W19B320ST/B
4M
8/2M 16 3V FLASH MEMORY
- 2 -
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
Taipei Office
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
Winbond Electronics (H.K.) Ltd.
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
FAX: 852-27552064
Unit 9-15, 22F, Millennium City,
TEL: 852-27513100
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
Winbond Electronics (Shanghai) Ltd.
200336 China
FAX: 86-21-62365998
27F, 2299 Yan An W. Rd. Shanghai,
TEL: 86-21-62365999
Winbond Electronics Corporation Japan
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
FAX: 81-45-4781800
7F Daini-ueno BLDG, 3-7-18
TEL: 81-45-4781881
9F, No.480, Rueiguang Rd.,
Neihu Chiu, Taipei, 114,
Taiwan, R.O.C.
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