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Электронный компонент: W24257SQ

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W24257
32K
8 CMOS STATIC RAM
Publication Release Date: May 2000
- 1 -
Revision A14
GENERAL DESCRIPTION
The W24257 is a slow speed, low power CMOS static RAM organized as 32768
8 bits that operates
on a single 5-volt power supply. This device is manufactured using Winbond's high performance
CMOS technology.
FEATURES
Low power consumption:
-
Active: 325 mW (max.)
-
Standby: 75
W (max.) (LL-version)
150
W (max.) (L-version)
Access time: 70 nS (max.)
Single
+5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Battery back-up operation capability
Data retention voltage: 2V (min.)
Packaged in 28-pin 330 mil SOP,
standard type one TSOP (8 mm x 13.4 mm )
PIN CONFIGURATION
25
26
27
28
20
21
22
23
16
17
18
19
15
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A13
CS
OE
WE
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A14
A7
A6
A5
A12
A4
A3
A2
A1
A0
I/O2
I/O3
I/O1
V
SS
24
BLOCK DIAGRAM
A0
.
.
CS
A14
WE
I/O1
I/O8
OE
V
DD
V
SS
.
.
DATA I/O
DECODER
CONTROL
CORE
ARRAY
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0
-A14
Address Inputs
I/O1
-I/O8
Data Inputs/Outputs
CS
Chip Select Input
WE
Write Enable Input
OE
Output Enable Input
V
DD
Power Supply
V
SS
Ground
W24257
- 2 -
TRUTH TABLE
CS
OE
WE
MODE
I/O1
-
I/O8
V
DD
CURRENT
H X X
Not
Selected
High
Z
I
SB
, I
SB
1
L
H
H
Output Disable
High Z
I
DD
L L H
Read
Data
Out
I
DD
L X L
Write
Data In
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING
UNIT
Supply Voltage to V
SS
Potential
-0.5 to +7.0
V
Input/Output to V
SS
Potential
-0.5 to V
DD
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
C
Operating Temperature
0 to +70
C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 5V
10%, V
SS
= 0V, T
A
= 0 to 70
C)
PARAMETER SYM.
TEST CONDITIONS
MIN. TYP.
MAX.
UNIT
Input Low Voltage
V
IL
- -0.5
-
+0.8
V
Input High Voltage
V
IH
- +2.2
-
V
DD
+0.5 V
Input Leakage Current
I
LI
V
IN
= V
SS
to V
DD
-2 - +2
A
Output Leakage
Current
I
LO
V
I/O
= V
SS
to V
DD,
CS = V
IH
(min.) or OE = V
IH
(min.) or
WE = V
IL
(max.)
-2 - +
2
A
Output Low Voltage
V
OL
I
OL
= +4.0 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -1.0 mA
2.4
-
-
V
Operating Power
Supply Current
I
DD
CS = V
IL
(min.),
I/O = 0 mA Cycle = min.,
Duty = 100%
- - 65 mA
Standby Power
Supply Current
I
SB
CS = V
IH
(min.)
Cycle = min., Duty = 100%
- - 3 mA
I
SB1
CS
V
DD
-0.2V
LL - -
15
A
L
-
-
30
A
Note: Typical characteristics are at V
DD
= 5V, T
A
= 25
C.
W24257
Publication Release Date: May 2000
- 3 -
Revision A14
CAPACITANCE
(V
DD
= 5V, T
A
= 25
C, f = 1 MHz)
PARAMETER SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels
0.6V to 2.4V
Input Rise and Fall Times
5 nS
Input and Output Timing Reference Level
1.5V
Output Load
C
L
= 100 pF, I
OH
/I
OL
= -1 mA/4 mA
AC Test Loads and Waveform
90%
90%
5 nS
10%
5 nS
10%
R1 1000 ohm
5V
OUTPUT
R2
660 ohm
5 pF
R2
660 ohm
R1 1000 ohm
5V
OUTPUT
100 pF
Including
Jig and
Scope
3.0V
0V
Including
Jig and
Scope
)
(For T
CLZ
,
,
,
,
,
T
OLZ
T
CHZ
T
OHZ
T
WHZ
T
OW
W24257
- 4 -
AC Characteristics, continued
(V
DD
= 5V
10%, V
SS
= 0V, T
A
= 0 to 70
C)
Read Cycle
PARAMETER SYMBOL
W24257-70
UNIT
MIN.
MAX.
Read Cycle Time
T
RC
70 - nS
Address Access Time
T
AA
- 70
nS
Chip Select Access Time
T
ACS
- 70
nS
Output Enable to Output Valid
T
AOE
- 35
nS
Chip Selection to Output in Low Z
T
CLZ
* 10
- nS
Output Enable to Output in Low Z
T
OLZ
* 5
- nS
Chip Deselection to Output in High Z
T
CHZ
* - 30 nS
Output Disable to Output in High Z
T
OHZ
* - 30 nS
Output Hold from Address Change
T
OH
10 - nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER SYMBOL
W24257-70
UNIT
MIN.
MAX.
Write Cycle Time
T
WC
70 - nS
Chip Selection to End of Write
T
CW
60 - nS
Address Valid to End of Write
T
AW
60 - nS
Address Setup Time
T
AS
0 -
nS
Write Pulse Width
T
WP
45 - nS
Write Recovery Time
CS, WE
T
WR
0 -
nS
Data Valid to End of Write
T
DW
30 - nS
Data Hold from End of Write
T
DH
0 -
nS
Write to Output in High Z
T
WHZ
* -
30 nS
Output Disable to Output in High Z
T
OHZ
* - 30 nS
Output Active from End of Write
T
OW
0 -
nS
These parameters are sampled but not 100% tested
W24257
Publication Release Date: May 2000
- 5 -
Revision A14
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
Address
T
RC
T
AA
T
OH
T
OH
D
OUT
Read Cycle 2
(Chip Select Controlled)
CS
D
OUT
T
CLZ
T
ACS
CHZ
T
Read Cycle 3
(Output Enable Controlled)
Address
T
RC
CS
D
OUT
T
AA
OE
T
AOE
T
OLZ
T
OH
CLZ
T
CHZ
T
T
ACS
T
OHZ
W24257
- 6 -
Timing Waveforms, continued
Write Cycle 1
Address
OE
CS
WE
D
OUT
D
IN
T
WC
T
WR
T
CW
T
WP
T
AS
T
OHZ
(1, 4)
T
DW
T
DH
T
AW
Write Cycle 2
(OE = V
IL
Fixed)
Address
CS
WE
D
OUT
D
IN
T
WC
T
CW
T
AS
T
DH
T
WR
T
WP
T
WHZ
DW
T
(2)
(3)
T
OW
T
OH
AW
T
(1, 4)
Notes:
1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied.
2. The data output from D
OUT
are the same as the data written to D
IN
during the write cycle.
3. D
OUT
provides the read data for the next address.
4. Transition is measured
500 mV from steady state with C
L
= 5 pF. This parameter is guaranteed but not 100% tested.
W24257
Publication Release Date: May 2000
- 7 -
Revision A14
DATA RETENTION CHARACTERISTICS
(T
A
= 0 to 70
C)
PARAMETER SYM.
TEST CONDITIONS
MIN. TYP. MAX. UNIT
V
DD
for Data Retention
V
DR
CS
V
DD
-0.2V
2.0 - - V
Data Retention Current
I
DDDR
CS
V
DD
-0.2V
LL - - 15
A
V
DD
= 3V
L
-
-
30
A
Chip Deselect to Data Retention Time T
CDR
See data retention
0
-
-
nS
Operation Recovery Time
T
R
waveform T
RC
* -
- nS
T
RC
*
= Read Cycle Time
DATA RETENTION WAVEFORM
4.5V
V
> 2V
DATA RETENTION MODE
CS
4.5V
=
=
DR
-0.2V
CS1 > V
DD
V
DD
T
R
T
CDR
V
IH
V
IH
ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
OPERATING
CURRENT
MAX. (mA)
STANDBY
CURRENT
MAX. (
A)
PACKAGE
W24257S-70LL
70
65
15
330 mil SOP
W24257S-70L
70
65
30
330 mil SOP
W24257Q-70LL
70
65
15
Standard type one TSOP
W24257Q-70L
70
65
30
Standard type one TSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
W24257
Publication Release Date: May 2000
- 8 -
Revision A14
BONDING PAD DIAGRAM
23
X
Y
A14
A12
A7
A6
A5
A3
8
22
A2
A10
OEB
A11
A9
A8
WEB
V
DD
V
DD
7
A4
A13
1
2
3
4
5
29
24
25
26
27
6
30
28
11
12
13
15
16
17
18
A0
I/O0 I/O1 I/O2 V
SS
V
SS
I/O4 I/O5 I/O6
19
9
A1
10
20
CSB
14
21
I/O7
I/O3
AC5394
PAD NO.
X
Y
1 -232.25
1445.22
2 -351.70
1445.22
3 -471.15
1445.22
4 -590.60
1445.22
5 -710.05
1445.22
6 -829.50
1445.22
7 -992.79
1362.24
8 -992.79
-1306.11
9 -857.86
-1452.79
10 -738.41
-1452.79
11 -594.84
-1414.13
12 -451.06
-1414.13
13 -310.67
-1414.13
14 -171.78
-1405.28
15 24.45
-1405.28
16 151.80
-1414.13
17 298.07
-1414.13
18 443.28
-1414.13
19 588.20
-1414.13
20 732.84
-1414.13
21 871.11
-1452.79
22 992.75
-1312.15
23 992.75
1373.67
24 810.09
1445.22
25 690.64
1445.22
26 571.19
1445.22
27 451.74
1445.22
28 332.29
1445.22
29 120.25
1444.65
30 -93.23
1444.65
Note: For bare chip form (C.O.B.) applications, the substrate must be connected to V
DD
or left floating in the PCB layout.
W24257
Publication Release Date: May 2000
- 9 -
Revision A14
PACKAGE DIMENSIONS
28-pin SO Wide Body
2
1
A
28
15
14
1
e
S
E
H
b
Seating Plane
A A
y
L
L
e
c
See Detail F
D
E
E
1
1
e
Detail F
1. Dimension D Max. & S include mold flash
or tie bar burrs.
2. Dimension b does not include dambar
protrusion/intrusion.
3. Dimension D & E include mold mismatch
and determined at the mold parting line.
.
0.25
0.20
0.010
0.008
Notes:
Symbol
Min. Nom. Max.
Max.
Nom.
Min.
Dimension in Inches
Dimension in mm
A
b
c
D
e
H
E
L
y
A
A
L
E
1
2
E
0.014
0.36
0.112
2.85
0.004
0.093
0.014
0.098
0.016
0.103
0.020
2.36
0.36
0.10
2.49
0.41
2.62
0.51
0.059
0.004
0
10
0.713
0.067
0.733
0.075
1.50
18.11
1.70
18.62
1.91
0.477
0.465
0.453
12.12
11.81
11.51
10
0
0.10
8.53
8.41
8.28
0.336
0.331
0.326
0.71
0.91
1.12
0.028
0.036
0.044
4. Controlling dimension: Inches.
5. General appearance spec should be based
on final visual inspection spec.
1.12
1.27
1.42
0.044
0.050
0.056
S
1.19
0.047
28-pin Standard Type One TSOP
A
A
A
2
1
L
L
1
Y
c
E
H
D
D
b
e
Controlling dimension: Millimeters
Min.
Dimension In Inches
Nom.
Max.
Min.
Nom.
Max.
Symbol
1.20
0.05
0.15
1.05
1.00
0.95
0.17
0.10
11.70
7.90
13.20
0.50
0.00
0
0.20
0.27
0.15
0.21
11.80
11.90
8.00
8.10
13.40
13.60
0.55
0.60
0.70
0.25
0.10
3
5
0.047
0.006
0.041
0.040
0.035
0.007
0.008
0.011
0.004
0.006
0.008
0.461
0.465
0.469
0.311
0.315
0.319
0.520
0.528
0.536
0.022
0.020
0.024
0.028
0.010
0.000
0.004
0
3
5
0.002
A
A
b
c
D
E
e
L
L
Y
1
1
2
A
H
D
Dimension In mm
1
W24257
- 10 -
VERSION HISTORY
VERSION DATE PAGE
DESCRIPTION
A12
Nov. 1999
1, 2, 7
Change the I
DD
, I
SB
, I
SB1
4, 7
Remove the W24257-10 spc.
A13 Apr.
2000 7
Typo correction in Standby Current Max.: mA->
A
A14
May 2000
1, 7, 8
Delete 28-pin DIP Package
8
Add in Bonding Pad Diagram
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Note: All data and specifications are subject to change withou t notice.
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Note: All data and specifications are subject to change withou t notice.