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Электронный компонент: W26L010A-12

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W26L010A
64K
16 HIGH-SPEED CMOS STATIC RAM
Publication Release Date: July 1998
- 1 -
Revision A3
GENERAL DESCRIPTION
The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536
16 bits that
operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
The W26L010A has an active low chip select, separate upper and lower byte selects, and a fast
output enable. No clock or refreshing is required. Separate byte select controls (
LB
and UB ) allow
individual bytes to be written and read.
LB
controls I/O1-I/O8, the lower byte. UB controls I/O9
-
I/O16, the upper byte. This device is well suited for use in high-density, high-speed system
applications.
FEATURES
High speed access time: 10/12 nS (max.)
Low power consumption:
-
Active: 530 mW (max.)
Single
+
3.3V power supply
Fully static operation
-
No clock or refreshing
All inputs and outputs directly TTL compatible
Three-state outputs
Data byte control
-
LB
(I/O1
-
I/O8),
UB
(I/O9
-
I/O16)
Available packages: 44-pin 400 mil SOJ and
44-pin TSOP(II)
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
V
DD
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
NC
NC
A9
A10
A11
A12
NC
I/O9
I/O10
I/O11
I/O12
V
DD
V
SS
I/O13
I/O14
I/O15
I/O16
LB
UB
OE
A13
A14
A15
44-PIN
BLOCK DIAGRAM
A0
.
.
A15
I/O1
I/O16
V
DD
V
SS
.
.
DATA I/O
DECODER
CONTROL
UB
CS
OE
WE
LB
CORE
ARRAY
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0
-
A15
Address Inputs
I/O1
-
I/O16
Data Inputs/Outputs
CS
Chip Select Inputs
WE
Write Enable Input
OE
Output Enable Input
LB
Lower Byte Select I/O1
-
I/O8
UB
Upper Byte Select I/O9
-
I/O16
V
DD
Power Supply
V
SS
Ground
NC
No Connection
W26L010A
- 2 -
TRUTH TABLE
CS
OE
WE
LB
UB
MODE
I/O1
-
I/O8
I/O9
-
I/O16
V
DD
CURRENT
H
X
X
X
X
Not Selected
High Z
High Z
I
SB
, I
SB1
L
H
H
X
X
Output Disable
High Z
High Z
I
DD
L
L
H
L
L
2 Bytes Read
D
OUT
D
OUT
I
DD
L
L
H
L
H
Lower Byte Read
D
OUT
High Z
I
DD
L
L
H
H
L
Upper Byte Read
High Z
D
OUT
I
DD
L
X
L
L
L
2 Bytes Write
D
IN
D
IN
I
DD
L
X
L
L
H
Lower Byte Write
D
IN
High Z
I
DD
L
X
L
H
L
Upper Byte Write
High Z
D
IN
I
DD
L
X
X
H
H
Output Disable
High Z
High Z
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to V
SS
Potential
-0.5 to +4.6
V
Input/Output to V
SS
Potential
-0.5 to V
DD
+0.5
V
Allowable Power Dissipation
1.5
W
Storage Temperature
-65 to +150
C
Operating Temperature
0 to +70
C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
W26L010A
Publication Release Date: July 1998
- 3 -
Revision A3
Operating Characteristics
(V
DD
= 3.3V
5%, V
SS
= 0V, T
A
= 0 to 70
C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Input Low Voltage
V
IL
-
-0.5
-
+0.8
V
Input High Voltage
V
IH
-
+2.0
-
V
DD
+0.3
V
Input Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-10
-
+10
A
Output Leakage
Current
I
LO
V
I/O
= V
SS
to V
DD
Output Pins in High Z,
See Truth Table
-10
-
+10
A
Output Low Voltage
V
OL
I
OL
= +8.0 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0 mA
2.4
-
-
V
Operating Power
I
DD
CS = V
IL
(max.), Cycle =
min.
10
-
-
160
mA
Supply Current
I/O = open, Duty = 100%
12
-
-
140
Standby Power
I
SB
CS = V
IH
(min.), Cycle = min.
-
-
30
mA
Supply Current
I
SB1
CS = V
DD
-0.2V, I/O = open
All other pins = V
DD
-0.2V/GND
-
-
10
mA
Note: Typical characteristics are evaluated at V
DD
= 3.3V, T
A
= 25
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
2 nS
Input and Output Timing Reference Level
1.5V
Output Load
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
W26L010A
- 4 -
AC Test Loads and Waveform
R1 320 ohm
3.3V
OUTPUT
R2
350 ohm
5 pF
R2
350 ohm
R1 320 ohm
3.3V
OUTPUT
30 pF
Including
Jig and
Scope
90%
90%
2 nS
10%
2 nS
10%
3.0V
0V
Including
Jig and
Scope
)
( For T
T
T
OLZ,
T
T
WHZ,
T
OW
T
CLZ,
BLZ,
CHZ,
BHZ,
T
OHZ,
(V
DD
= 3.3V
5%, V
SS
= 0V, T
A
= 0 to 70
C)
(1) Read Cycle
PARAMETER
SYM.
W26L010A-10
W26L010A-12
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
10
-
12
-
nS
Address Access Time
T
AA
-
10
-
12
nS
Chip Select Access Time
T
ACS
-
10
-
12
nS
Output Enable to Output Valid
T
OE
-
5
-
6
nS
UB , LB Access Time
T
BA
-
5
-
6
nS
Output Hold from Address Change
T
OH
3
-
3
-
nS
Chip Select to Output in Low Z
T
CLZ*
3
-
3
-
nS
Chip Deselect to Output in High Z
T
CHZ*
-
5
-
6
nS
Output Enable to Output in Low Z
T
OLZ*
0
-
0
-
nS
Output Disable to Output in High Z
T
OHZ
*
-
5
-
6
nS
UB , LB Select to Output in Low Z
T
BLZ*
0
-
0
-
nS
UB
,
LB
Deselect to Output in High Z
T
BHZ*
-
5
-
6
nS
These parameters are sampled but not 100% tested.
W26L010A
Publication Release Date: July 1998
- 5 -
Revision A3
AC Characteristics, continued
(2) Write Cycle
PARAMETER
SYM.
W26L010A-10
W26L010A-12
UNIT
MIN.
MAX.
MIN.
MAX.
Write Cycle Time
T
WC
10
-
12
-
nS
Chip Select to End of Write
T
CW
9
-
10
-
nS
Address Valid to End of Write
T
AW
9
-
10
-
nS
Address Setup Time
T
AS
0
-
0
-
nS
UB , LB Select to End of Write
T
BW
9
-
10
-
nS
Write Pulse Width
T
WP
9
-
10
-
nS
Write Recovery Time
CS , WE
T
WR
0
-
0
-
nS
Data Valid to End of Write
T
DW
6
-
7
-
nS
Data Hold from End of Write
T
DH
0
-
0
-
nS
Write to Output in High Z
T
WHZ*
-
6
-
7
nS
End of Write to Output Active
T
OW*
3
-
3
-
nS
These parameters are sampled but not 100% tested.