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Электронный компонент: W27L02-70

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W27L02
256K
8 ELECTRICALLY ERASABLE EPROM
Publication Release Date: February 20, 2003
- 1 -
Revision A3
1. GENERAL DESCRIPTION
The W27L02 is a high speed, low power consumption Electrically Erasable and Programmable Read
Only Memory organized as 262,144 x 8 bits. It requires only one supply in the range of 3.3V
10% in
normal read mode. The W27L02 provides an electrical chip erase function.
2. FEATURES
Wide range for power supply voltage:
3.3V
10%
High speed access time: 70/90 nS (max.)
Read operating current: 15 mA (max.)
Erase/Programming operating current:
30 mA (max.)
Standby current: 20
A (max.)
+12V erase/programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available
packages: 32-lead PLCC and 32-lead
STSOP
3. PIN CONFIGURATIONS
A6
A5
A4
A3
A2
A1
A0
Q0
5
6
7
8
9
10
11
12
13
Q
1
Q
2
Q
4
Q
5
Q
6
1
4
4 3 2 1 3
2
3
1
3
0
A14
A13
A8
A9
#OE
A11
Q7
29
28
27
26
25
24
23
22
21
32-lead PLCC
V
s
s
1
5
1
6
1
7
1
8
1
9
2
0
A
1
V
D
D
#CE
A10
A
1
5
A
1
6
Q
3
A7
A
1
2
V
p
p
#
P
G
M
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A3
A2
A1
A0
Q0
Q1
Q2
#OE
A10
#CE
Q7
Q6
Q5
Q4
Q3
32-lead STSOP
A15
A12
A7
A6
A5
A4
#PGM
A14
A13
A8
V
DD
A11
A9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A17
V SS
V
PP
7
4. BLOCK DIAGRAM
V
Vss
DD
V
PP
CONTROL
OUTPUT
BUFFER
DECODER
CORE
ARRAY
Q0
Q7
.
.
#CE
#OE
A0
.
.
A17
#PGM
5. PIN DESCRIPTION
SYMBOL DESCRIPTION
A1
- A17 Address Inputs
Q0
- Q7
Data Inputs/Outputs
#CE
Chip Enable
#OE
Output Enable
#PGM
Program Enable
V
PP
Program/Erase Supply Voltage
V
DD
Power Supply
Vss Ground
NC No
Connection
W27L02
- 2 -
6. FUNCTIONAL DESCRIPTION
Read Mode
Like conventional UVEPROMs, the W27L02 has two control functions and both of these produce data at
the outputs.
#CE is for power control and chip select. #OE controls the output buffer to gate data to the output pins.
When addresses are stable, the address access time (T
ACC
) is equal to the delay from #CE to output
(T
CE
), and data are available at the outputs T
OE
after the falling edge of #OE, if T
ACC
and T
CE
timings
are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs,
which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half an
hour), the W27L02 uses electrical erasure. Generally, the chip can be erased within 100 mS by using an
EPROM writer with a special erase algorithm.
There are two ways to enter Erase mode. One is to raise V
PP
to V
PE
(12V), V
DD
= V
CE
(5V), #CE low,
#OE high, A9 = V
HH
(12V), and all other address pins are kept at fixed low or high. Pulsing #PGM low
starts the erase operation. The other way is somewhat like flash, by programming two consecutive
commands into the device and then enter Erase mode. The two commands are loading Data = AA(hex)
to Addr. = 5555(hex) and Data = 10(hex) to Addr. = 2AAA(hex). Be careful to note that the #PGM pulse
widths of these two commands are different: One is 100
S, while the other is 100 mS. Please refer to
the Smart Erase Algorithm 1 & 2.
Erase Verify Mode
After an erase operation, all of the bytes in the chip must be verified to check whether they have been
successfully erased to "1" or not. The erase verify mode automatically ensures a substantial erase
margin. This mode will be entered after the erase operation if V
DD
= V
PE
(5V), #CE low, and #OE low,
#PGM
high
.
Program Mode
Programming is performed exactly as it is in conventional UVEPROMs, and programming is the only
way to change cell data from "1" to "0." The program mode is entered when V
PP
is raised to V
PP
(12V),
V
DD
= V
CP
(5V), #CE low, #OE high, the address pins equal the desired addresses, and the input pins
equal the desired inputs. Pulsing #PGM low starts the programming operation.
Program Verify Mode
All of the bytes in the chip must be verified to check whether they have been successfully programmed
with the desired data or not. Hence, after each byte is programmed, a program verify operation should
be performed. The program verify mode automatically ensures a substantial program margin. This mode
will be entered after the program operation if V
PP
= V
PP
(12V), #CE low, #OE low
,
and #PGM high.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different
data. When #CE high , erasing or programming of non-target chips is inhibited, so that except for the
#CE, the W27L02 may have common inputs.
W27L02
Publication Release Date: February 20, 2003
- 3 -
Revision A3
Standby Mode
The standby mode significantly reduces V
DD
current. This mode is entered when #CE high. In standby
mode, all outputs are in a high impedance state, independent of #OE and #PGM.
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27L02 provides two control inputs for
multiple memory connections. Two-line control provides for lowest possible memory power dissipation
and ensures that data bus contention will not occur.
System Considerations
EPROM power switching characteristics require careful device decoupling. System designers are
concerned with three supply current issues: standby current levels (I
SB
), active current levels (I
CC
), and
transient current peaks produced by the falling and rising edges of #CE. Transient current magnitudes
depend on the device output's capacitive and inductive loading. Two-line control and proper decoupling
capacitor selection will suppress transient voltage peaks. Each device should have a 0.1
F ceramic
capacitor connected between its V
DD
and Vss. This high frequency, low inherent-inductance capacitor
should be placed as close as possible to the device. Additionally, for every eight devices, a 4.7
F
electrolytic capacitor should be placed at the array's power supply connection between V
DD
and Vss.
The bulk capacitor will overcome voltage slumps caused by PC board trace inductances.
Table of Operating Modes
V
DD
= 3.3V
10%, Vpp = Vp
E
= V
HH
= 12V, V
CP
= V
PE
= V
CE
= 5V, X = V
IH
or V
IL
PINS
MODE
#CE
#OE
#PGM
A0 A9
OTER
ADDR
V
DD
V
PP
OUTPUTS
Read V
IL
V
IL
X X X X V
DD
V
DD
D
OUT
Output Disable
V
IL
V
IH
X X X X V
DD
V
DD
High Z
Standby (TTL)
V
IH
X X X
X X
V
DD
V
DD
High Z
Standby (CMOS)
V
DD
0.3V
X
X
X
X
X
V
DD
V
DD
High Z
Program V
IL
V
IH
V
IL
X X X V
CP
V
PP
D
IN
Program Verify
V
IL
V
IL
V
IH
X X X V
CP
V
PP
D
OUT
Program Inhibit
V
IH
X
X
X
X
X
V
CP
V
PP
High Z
Erase1 V
IL
V
IH
V
IL
V
IL
V
PE
V
CE
V
PE
FF (Hex)
V
IL
V
IH
V
IL
First command:
Addr. = 5555 (hex)
V
CE
V
CP
AA (Hex)
Erase2
Second command:
Addr. = 2AAA (hex)
V
CE
V
CP
10 (Hex)
Erase Verify
V
IL
V
IL
V
IH
X
X X
V
PE
V
PP
D
OUT
Erase Inhibit
V
IH
X
X
X
X
X
V
CE
V
PE
High Z
Product Identifier -
Manufacturer
V
IL
V
IL
X V
IL
V
HH
X
V
DD
V
DD
DA (Hex)
Product Identifier -
Device
V
IL
V
IL
X V
IH
V
HH
X
V
DD
V
DD
85 (Hex)
W27L02
- 4 -
8. ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING
UNIT
Operation Temperature
0 to +70
C
Storage Temperature
-65 to +125
C
Voltage on all Pins with Respect to Ground Except V
DD,
V
PP
and A9 Pins
-0.5 to V
DD
+0.5 V
Voltage on V
DD
Pin with Respect to Ground
-0.5 to +7.0
V
Voltage on V
PP
Pin with Respect to Ground
-0.5 to +14.5
V
Voltage on A9 Pin with Respect to Ground
-0.5 to +14.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Capacitance
(V
DD
= 3.3V
10%, T
A
= 25
C, f = 1 MHz)
PARAMETER SYMBOL
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Output Capacitance
C
OUT
V
OUT
= 0V
12
pF
Read Operation DC Characteristics
(V
DD
= 3.3V
10%, T
A
= 0 to 70
C)
LIMITS
PARAMETER SYM.
CONDITIONS
MIN. TYP. MAX.
UNIT
Input Load Current
I
LI
V
IN
= 0V to V
DD
-5 - 5
A
Output Leakage Current
I
LO
V
OUT
= 0V to V
DD
-10 - 10
A
Standby V
DD
Current
(TTL input)
I
SB
#CE = V
IH
-
-
200
A
Standby V
DD
Current
(CMOS input)
I
SB
1 #CE = V
DD
0.2V
- - 20
A
V
DD
Operating Current
I
CC
#CE = V
IL,
I
OUT
= 0 mA,
f = 5 MHz
- - 15 mA
V
PP
Operating Current
I
PP
V
PP
= V
DD
- - 10
A
Input Low Voltage
V
IL
- -0.3
-
0.6
V
Input High Voltage
V
IH
- 2.0
-
V
DD
+0.5 V
Output Low Voltage
V
OL
I
OL
= 1.6 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -0.1 mA
2.4
-
-
V
V
PP
Operating Voltage
V
PP
- V
DD -
0.7 -
V
DD
V
W27L02
Publication Release Date: February 20, 2003
- 5 -
Revision A3
Electrical Chericteristics, continued
Program/Erase DC Characteristics
(T
A
= 25
C , V
DD
= 3.3V
10%, V
HH
= 12V)
LIMITS
PARAMETER
SYM.
CONDITIONS
MIN. TYP. MAX.
UNIT
Input Load Current
I
LI
V
IN
= V
IL
or V
IH
-10 - 10
A
V
DD
Program Current
I
CP
#CE = V
IL,
#OE =
V
IH,
#PGM = V
IL
- - 30
mA
V
DD
Erase Current
I
CE
#CE = V
IL,
#OE = V
IH,
#PGM = V
IL
, A9 = V
HH
- - 30
mA
V
PP
Program Current
I
PP
#CE = V
IL,
#OE =
V
IH,
#PGM = V
IL
- - 30
mA
V
PP
Erase Current
I
PE
#CE = V
IL,
#OE = V
IH,
#PGM = V
IL
, A9 = V
HH
- - 30
mA
Input Low Voltage
V
IL
- -0.3
-
0.8
V
Input High Voltage
V
IH
- 2.4
-
5.5
V
Output Low Voltage (Verify)
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage (Verify)
V
OH
I
OH
= -0.4 mA
2.4
-
-
V
A9 Silicon I.D. Voltage
V
ID
- 11.5
12.0
12.5
V
A9 Erase Voltage
V
ID
- 11.75
12.0
14.25
V
V
PP
Program Voltage
V
PP
- 11.75
12.0
12.25
V
V
PP
Erase Voltage
V
PE
- 11.75
12.0
14.25
V
V
DD
Supply Voltage
(Program)
V
CP
- 4.5
5.0
5.5
V
V
DD
Supply Voltage (Erase)
V
CE
- 4.5
5.0
5.5
V
V
DD
Supply Voltage (Erase
Verify)
V
PE
- -
5.0
-
V
Note: V
DD
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
W27L02
- 6 -
Electrical Chericteristics, continued
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels
0V to 3.0V
Input Rise and Fall Times
5 nS
Input and Output Timing Reference Level
1.5V/1.5V
Output Load
C
L
= 100 pF, I
OH
/I
OL
= -0.1 mA/1.6 mA for Read
I
OH
/I
OL
= -0.4 mA/2.1 mA for Program/Erase
AC Test Load and Waveforms
+1.3V
3.3K ohm
100 pF (Including Jig and Scope)
D
(IN914)
OUT
3.0V
0V
1.5V
Test Points
Test Points
Input
Output
1.5V
W27L02
Publication Release Date: February 20, 2003
- 7 -
Revision A3
Electrical Chericteristics, continued
Read Operation AC Characteristics
(V
DD
= 3.3V
10%, T
A
= 0 to 70
C)
W27L02-70 W27L02-90
PARAMETER SYM.
MIN. MAX. MIN. MAX.
UNIT
Read Cycle Time
T
RC
70 - 90 - nS
Chip Enable Access Time
T
CE
- 70 - 90 nS
Address Access Time
T
ACC
- 70 - 90 nS
Output Enable Access Time
T
OE
- 30 - 40 nS
#OE High to High-Z Output
T
DF
- 25 - 25 nS
Output Hold from Address Change
T
OH
0 - 0 - nS
Note: V
DD
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
AC Programming/Erase Characteristics
(V
DD
= 3.3V
10%, T
A
= 25
C )
LIMITS
PARAMETER
SYM.
MIN. TYP. MAX.
UNIT
V
PP
Setup Time
T
VPS
2.0 - -
S
Address Setup Time
T
AS
2.0 - -
S
Data Setup Time
T
DS
2.0 - -
S
#PGM Program Pulse Width
T
PWP
95 100 105
S
#PGM Erase Pulse Width
T
PWE
95 100 105 mS
Data Hold Time
T
DH
2.0 - -
S
#OE Setup Time
T
OES
2.0 - -
S
Data Valid from #OE
T
OEV
- -
150
nS
#OE High to Output High Z
T
DFP
0 -
130
nS
Address Hold Time after #PGM High
T
AH
0 - -
S
Address Hold Time (Erase)
T
AHE
2.0 - -
S
#CE Setup Time
T
CES
2.0 - -
S
Note: V
DD
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
W27L02
- 8 -
9. TIMING WAVEFORMS
AC Read Waveform
#CE
Outputs
T
High Z
High Z
Valid Output
CE
T
OE
T
ACC
T
OH
T
DF
Address
Address Valid
V
IL
V
IH
V
IH
V
IL
V
IH
V
IL
#OE
Program Waveform
Address
Data
12.0V
5.0V
#CE
Address Stable
Program
Read
Verify
Address Stable
Address Valid
Verify
Data In Stable
5.0V
Program
D
OUT
T
AH
D
OUT
D
OUT
T
DH
T
DS
T
VPS
T
CES
T
ACC
T
DFP
T
AS
V
IH
V
IL
V
IH
V
IL
V
PP
#OE
T
OES
T
OEV
T
OE
V
IH
V
IL
#PGM
T
PWP
V
IH
V
IL
W27L02
Publication Release Date: February 20, 2003
- 9 -
Revision A3
Timing Waveforms, Continued
Erase Waveform 1
Address
Read
SID
Device
Read
SID
A9 = 12.0V
Others = V
IL
A0 = V
IL
Data
Chip Erase
A9 = 12.0V
Erase Verify
Address
Stable
T
AS
DA
Data All One
12.0V
5.0V
A0=VIH
Read Verify
Blank Check
Manufacturer
Address
Stable
Address
Stable
Others=
V
IL
Others = V
IL
T
AS
T
AS
T
AHC
T
DS
T
DH
T
VPS
T
DFP
D
OUT
D
OUT
D
OUT
T
AH
T
ACC
V
IH
V
IL
V
PP
#CE
#OE
#PGM
T
CE
T
OE
T
OE
T
OES
T
OEV
T
PWE
T
CES
T
OE
V
IH
V
IL
V
IH
V
IL
= VDD
85
Erase Waveform 2
Address
Read
SID
Device
Read
SID
A9 = 12.0V
Others = V
IL
A0 = V
IL
Data
Chip Erase
T
AS
DA
12.0V
5.0V
A0=VIH
Manufacturer
Others=
V
IL
T
AS
T
VPS
V
IH
V
IL
V
PP
#CE
#OE
#PGM
T
CE
T
OE
T
OE
T
PWP
V
IH
V
IL
V
IH
V
IL
Erase Verify
Address
Stable
Read Verify
Blank Check
Address
Stable
Address
Stable
T
DH
T
DFP
D
OUT
D
OUT
D
OUT
T
AH
T
ACC
T
OES
T
OEV
T
OE
= VDD
85
2AAA
T
PWP
AA
10
Command 1
Command 2
T
CES
T
DS
T
AS
T
AHC
5555
W27L02
- 10 -
10. SMART PROGRAMMING ALGORITHM
Start
Address = First Location
VDD = 5V
Vpp = 12V
X = 0
Increment X
X = 25?
Verify
One Byte
Last
Address?
VDD = 5V
Vpp = 5V
Compare
All Bytes to
Original Data
Pass
Device
Increment
Address
No
Fail
Yes
Pass
Fail
Fail
Fail
Device
Verify
One Byte
Program One 100 S Pulse
No
Pass
Yes
Pass
W27L02
Publication Release Date: February 20, 2003
- 11 -
Revision A3
11. SMART ERASE ALGORITHM 1
Start
VDD = 5V
Vpp = 12V
X = 0
A9 = 12V; A0 = V
Chip Erase 100 mS Pulse
Address = First Location
IL
Compare
All Bytes to
FFs (HEX)
Pass
Device
Fail
Device
Pass
VDD = 3.0V
Vpp = 3.0V
Fail
X = 20?
Yes
No
Increment X
W27L02
- 12 -
12. SMART ERASE ALGORITHM 2
Address = First Location
Compare
All Bytes to
FFs (HEX)
Pass
Device
Fail
Fail
Device
Pass
VDD = 3.0V
Vpp = 3.0V
Start
VDD = 5V
Vpp = 12V
X = 0
Command 100uS Pulse
with Address = 5555(Hex)
Data = AA(Hex)
Command 100mS Pulse
with Address =2AAA(Hex)
Data = 10(Hex)
X = 20?
Yes
No
Increment X
W27L02
Publication Release Date: February 20, 2003
- 13 -
Revision A3
13. ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
POWER SUPPLY
CURRENT MAX.
(mA)
STANDBY V
DD
CURRENT MAX.
(
A)
PACKAGE
W27L02P-70 70 15
20
32-Lead
PLCC
W27L02P-90 90 15
20
32-Lead
PLCC
W27L02Q-70 70 15
20
32-Lead
STSOP
W27L02Q-90 90 15
20
32-Lead
STSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
W27L02
- 14 -
14. PACKAGE DIMENSIONS
32-Lead PLCC
L
c
1
b
2
A
H
E
E
e
b
D H
D
y
A
A
1
Seating Plane
E
G
G
D
1
13
14
20
29
32
4
5
21
30
Notes:
1. Dimensions D & E do not include interlead flash.
2. Dimension b does not include dambar protrusion/intrusion.
3. Controlling dimension: Inches.
4. General appearance spec. should be based on final
visual inspection sepc.
Symbol
Min. Nom. Max.
Max.
Nom.
Min.
Dimension in Inches
Dimension in mm
A
b
c
D
e
H
E
L
y
A
A
1
2
E
b
1
G
D
3.56
0.50
H
D
G
E
0.020
0.140
2.80
2.67
2.93
0.71
0.66
0.81
0.41
0.46
0.56
0.20
0.25
0.35
13.89
13.97
14.05
11.35
11.43
11.51
1.27
12.45
12.95
13.46
0.530
0.510
0.490
0.050
0.453
0.450
0.447
0.553
0.550
0.547
0.014
0.010
0.008
0.022
0.018
0.016
0.032
0.026
0.028
0.115
0.105
0.110
1.12
1.42
0.044
0.056
0
10
10
0
9.91
10.41
10.92
14.86
14.99
15.11
12.32
12.45
12.57
1.91
2.29
0.004
0.095
0.090
0.075
0.495
0.490
0.485
0.595
0.590
0.585
0.430
0.410
0.390
0.10
2.41
32-Lead STSOP (8 x 14 mm)
Min.
Dimension in Inches
Nom. Max. Min. Nom. Max.
Symbol
1.20
0.05
0.15
1.05
1.00
0.95
0.17
0.10
0.50
0.00
0
0.22
0.27
-----
0.21
12.40
8.00
14.00
0.50
0.60
0.70
0.80
0.10
3
5
0.047
0.006
0.041
0.040
0.035
0.007
0.009
0.010
0.004
-----
0.008
0.488
0.315
0.551
0.020
0.020
0.024
0.028
0.031
0.000
0.004
0
3
5
0.002
A
A
b
c
D
E
e
L
L
Y
1
1
2
A
H
D
Dimension in mm
A
A
A
2
1
L
L
1
Y
E
H
D
D
c
b
e
W27L02
Publication Release Date: February 20, 2003
- 15 -
Revision A3
15. VERSION HISTORY
VERSION DATE PAGE
DESCRIPTION
A1
Oct. 19, 2001
-
Initial Issue
A2
May 30, 2002
10
Modify Erase Waveform
2, 3, 4, 6
Correct the Vcv(V
PP
) as V
PE
(V
PP
) under Erase Inhibit
Mode
3
Modify the Pin of V
PP
from V
PE
to
V
PP
In the
Erase Verify
Mode
All
Delete V
DD
= 5.0V
10%
A3
Feb. 20, 2003
1, 13, 14 Delete DIP package
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
Taipei Office
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
Winbond Electronics (H.K.) Ltd.
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
FAX: 852-27552064
Unit 9-15, 22F, Millennium City,
TEL: 852-27513100
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
Winbond Electronics (Shanghai) Ltd.
200336 China
FAX: 86-21-62365998
27F, 2299 Yan An W. Rd. Shanghai,
TEL: 86-21-62365999
Winbond Electronics Corporation Japan
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
FAX: 81-45-4781800
7F Daini-ueno BLDG, 3-7-18
TEL: 81-45-4781881
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.