ChipFind - документация

Электронный компонент: W28F641BT80L

Скачать:  PDF   ZIP

Document Outline

W28F641B/T
64MBIT (4MBIT
16)
PAGE MODE DUAL WORK FLASH MEMORY
Publication Release Date: March 27, 2003
- 1 -
Revision A3
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 2
2. FEATURES ......................................................................................................................................... 2
3. PIN CONFIGURATION ....................................................................................................................... 3
4. ELECTRICAL CHARACTERISTICS ................................................................................................. 16
Absolute Maximum Ratings* ............................................................................................................ 16
Operating Conditions........................................................................................................................ 16
Capacitance
(1)
.................................................................................................................................. 17
AC Input/Output Test Conditions...................................................................................................... 17
DC Characteristics............................................................................................................................ 18
AC Characteristics - Read-only Operations(1)................................................................................. 20
AC Characteristics - Write Operations
(1, 2)
...................................................................................... 23
Reset Operations.............................................................................................................................. 25
Reset AC Specifications ................................................................................................................... 25
Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance
(3)
............. 26
5. ADDITIONAL INFORMATION........................................................................................................... 27
Recommended Operating Conditions .............................................................................................. 27
At Device Power-Up ................................................................................................................... 27
Glitch Noises .............................................................................................................................. 28
6. ORDERING INFORMATION............................................................................................................. 29
7. PACKAGE DIMENSIONS ................................................................................................................. 30
48-pin Standard Thin Small Outline Package (measured in millimeters)......................................... 30
48-ball TFBGA (8 mm x 11 mm) (measurements in millimeters) ..................................................... 30
8. VERSION HISTORY ......................................................................................................................... 31
W28F641B/T
1. GENERAL DESCRIPTION
The W28F641, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash
memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide
range of applications. The product can be operated at V
DD
= 2.7V to 3.6V and V
PP
= 1.65V to 3.6V or
11.7V to 12.3V. Its low voltage operation capability greatly extends battery life for portable
applications.
The W28F641 provides high performance asynchronous page mode. It allows code execution directly
from Flash, thus eliminating time-consuming wait states. Furthermore, the configurative partitioning
architecture allows flexible dual work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides
separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and
data storage.
Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP
(One Time Program) block provides an area to store permanent code such as a unique number.
2. FEATURES
- One hundred and twenty-seven 32k-word
Main Blocks
64M Density with 16Bit I/O Interface
High-Performance Reads
- Top or Bottom Parameter Location
- 80/35 nS 8-Word Page Mode
Enhanced Data Protection Features
Configurative 4-Plane Dual Work
- Individual Block Lock and Block Lock-Down
with Zero-Latency
- Flexible Partitioning
- Read operations during Block Erase or (Page
Buffer) Program
- All blocks are locked at power-up or device
reset
- Status Register for Each Partition
- Absolute Protection with V
PP
V
PPLK
Low Power Operation
- Block Erase, Full Chip Erase, (Page Buffer)
Word Program Lockout during Power
Transitions
- 2.7V Read and Write Operations
- V
DDQ
for Input/Output Power Supply Isolation
- Automatic Power Savings Mode Reduces
I
CCR
in Static Mode
Automated Erase/Program Algorithms
- 3.0V Low-Power 11 S/ Word (Typ.)
Programming
Enhanced Code + Data Storage
- 5 S Typical Erase/Program Suspends
- 12V No Glue Logic 9 S/ Word (Typ.)
Production Programming and 0.5s Erase
(Typ.)
OTP (One Time Program) Block
- 4-Word Factory-Programmed Area
- 4-Word User-Programmable Area
Cross-Compatible Command Support
High Performance Program with Page Buffer
- Common Flash Interface (CFI)
- Basic Command Set
- 16-Word Page Buffer
- 5 S/ Word (Typ.) at 12V V
PP
Extended Cycling Capability
Operating Temperature
- Minimum 100,000 Block Erase Cycles
- -40C to +85C
Chip-Size Packaging
CMOS Process (P-type silicon substrate)
- 0.75 mm pitch 48-Ball TFBGA and 48-Pin
TSOP
Flexible Blocking Architecture
ETOXTM Flash Technology
- Eight 4k-word Parameter Blocks
- 2 -
W28F641B/T
Publication Release Date: March 27, 2003
No designed or rated as radiation hardened
* ETOX is a trademark of Intel Corporation.
3. PIN CONFIGURATION
A
#CE
A3
B
C
D
E
F
G
H
A4
A2
A1
A0
#OE
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A18
A20
DQ2
DQ10
DQ11
DQ3
#WP
#WE
#RESET
A21
A19
DQ5
DQ12
V
DDQ
DQ4
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A13
A12
A14
A15
A16
DQ15
Vss
Vss
V
DD
V
PP
1
2
3
4
5
6
48-pin TSOP
Standard Pinout
12mm X 20mm
Top View
DQ15
#OE
A16
#CE
A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48
47
46
45
44
43
42
41
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
V
DD
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
Vss
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A9
A10
A11
A12
A13
A14
A15
24
23
A17
#WE
A7
A6
A5
A4
A3
A2
A1
21
22
#WP
A18
A19
#RESET
A20
A21
A8
V
PP
DDQ
0.75 mm pitch
48-Ball TFBGA
Pinout








8 x 11 mm
TOP VIEW
Figure 1. 0.75 mm pitch TFBGA 48-Ball and 48-Lead TSOP (Normal Bend) Pinout
- 3 -
Revision A3
W28F641B/T
Table 1. Pin Descriptions
SYMBOL
TYPE
NAME AND FUNCTION
A0
- A21
INPUT
ADDRESS INPUTS: Inputs for addresses. 64M: A0
- A21.
DQ0
- DQ15
INPUT/
OUTPUT
DATA INPUT/OUTPUTS: Inputs data and commands during CUI (Command User
Interface) write cycles, outputs data during memory array, status register, query code,
identifier code and partition configuration register code reads. Data pins float to high
impedance (High Z) when the chip or outputs are deselected. Data is internally
latched during an erase or program cycle.
#CE INPUT
CHIP ENABLE: Activates the device's control logic, input buffers, decoders and
sense amplifiers. #CE-high (V
IH
) deselects the device and reduces power
consumption to standby levels.
#RESET INPUT
RESET: When low (V
IL
), #RESET resets internal automation and inhibits write
operations, which provides data protection. #RESET-high (V
IH
) enables normal
operation. After power-up or reset mode, the device is automatically set to read array
mode. #RESET must be low during power-up/down.
#OE INPUT
OUTPUT ENABLE: Gates the device's outputs during a read cycle.
#WE INPUT
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of #CE or #WE (whichever goes high first).
#WP INPUT
WRITE PROTECT: When #WP is V
IL
, locked-down blocks cannot be unlocked. Erase
or program operation can be executed to the blocks which are not locked and not
locked-down. When #WP is V
IH
, lock-down is disabled.
V
PP
INPUT
MONITORING POWER SUPPLY VOLTAGE: V
PP
is not used for power supply pin.
With V
PP
V
PPLK
, block erase, full chip erase, (page buffer) program or OTP program
cannot be executed and should not be attempted.
Applying 12V 0.3V to V
PP
provides fast erasing or fast programming mode. In this
mode, V
PP
is power supply pin. Applying 12V 0.3V to V
PP
during erase/program can
only be done for a maximum of 1,000 cycles on each block. V
PP
may be connected to
12V 0.3V for a total of 80 hours maximum. Use of this pin at 12V beyond these
limits may reduce block cycling capability or cause permanent damage.
V
DD
SUPPLY
DEVICE POWER SUPPLY: With V
DD
V
LKO
, all write attempts to the flash memory
are inhibited. Device operations at invalid V
DD
voltage (see DC Characteristics)
produce spurious results and should not be attempted.
V
DDQ
SUPPLY
INPUT/OUTPUT POWER SUPPLY (2.7V to 3.6V): Power supply for all input/output
pins.
V
SS
SUPPLY
GROUND: Do not float any ground pins.
- 4 -
W28F641B/T
Publication Release Date: March 27, 2003
Table 2. Simultaneous Operation Modes Allowed with Four Planes
(1,2)
THEN THE MODES ALLOWED IN THE OTHER PARTITION IS:
IF ONE
PARTITION IS:
Read
Array
Read
ID/OTP
Read
Status
Read
Query
Word
Program
Page
Buffer
Program
OTP
Program
Block
Erase
Full
Chip
Erase
Program
Suspend
Block
Erase
Suspend
Read
Array X X X X X X
X X
X
Read
ID/OTP X X X X X X
X X
X
Read Status
X
X
X
X X X X X
X X X
Read
Query X X X X X X
X X
X
Word
Program
X X X X
X
Page Buffer
Program
X X X X
X
OTP
Program
X
Block
Erase X X X X
Full Chip Erase
X
Program
Suspend
X X X X
X
Block Erase
Suspend
X X X X X X
X
Notes:
1. "X" denotes the operation available.
2. Configurative Partition Dual Work Restrictions:
Status register reflects partition state, not WSM (Write State Machine) state - this allows a status register for each partition.
Only one partition can be erased or programmed at a time - no command queuing.
Commands must be written to an address within the block targeted by that command.













- 5 -
Revision A3
W28F641B/T
BLOCK NUMBER ADDRESS RANGE
134
4K-WORD
3FF000H - 3FFFFFH
133
4K-WORD
3FE000H - 3FEFFFH
132
4K-WORD
3FD000H - 3FDFFFH
131
4K-WORD
3FC000H - 3FCFFFH
130
4K-WORD
3FB000H - 3FBFFFH
129
4K-WORD
3FA000H - 3FAFFFH
128
4K-WORD
3F9000H - 3F9FFFH
127
4K-WORD
3F8000H - 3F8FFFH
126
32K-WORD
3F0000H - 3F7FFFH
125
32K-WORD
3E8000H - 3EFFFFH
124
32K-WORD
3E0000H - 3E7FFFH
123
32K-WORD
3D8000H - 3DFFFFH
122
32K-WORD
3D0000H - 3D7FFFH
121
32K-WORD
3C8000H - 3CFFFFH
120
32K-WORD
3C0000H - 3C7FFFH
119
32K-WORD
3B8000H - 3BFFFFH
118
32K-WORD
3B0000H - 3B7FFFH
117
32K-WORD
3A8000H - 3AFFFFH
116
32K-WORD
3A0000H - 3A7FFFH
115
32K-WORD
398000H - 39FFFFH
114
32K-WORD
390000H - 397FFFH
113
32K-WORD
388000H - 38FFFFH
112
32K-WORD
380000H - 387FFFH
111
32K-WORD
378000H - 37FFFFH
110
32K-WORD
370000H - 377FFFH
109
32K-WORD
368000H - 36FFFFH
108
32K-WORD
360000H - 367FFFH
107
32K-WORD
358000H - 35FFFFH
106
32K-WORD
350000H - 357FFFH
105
32K-WORD
348000H - 34FFFFH
104
32K-WORD
340000H - 347FFFH
103
32K-WORD
338000H - 33FFFFH
102
32K-WORD
330000H - 337FFFH
101
32K-WORD
328000H - 32FFFFH
100
32K-WORD
320000H - 327FFFH
99
32K-WORD
318000H - 31FFFFH
98
32K-WORD
310000H - 317FFFH
97
32K-WORD
308000H - 30FFFFH
PLANE3 (PARAMETER PLANE)
96
32K-WORD
300000H - 307FFFH
95
32K-WORD
2F8000H - 2FFFFFH
94
32K-WORD
2F0000H - 2F7FFFH
93
32K-WORD
2E8000H - 2EFFFFH
92
32K-WORD
2E0000H - 2E7FFFH
91
32K-WORD
2D8000H - 2DFFFFH
90
32K-WORD
2D0000H - 2D7FFFH
89
32K-WORD
2C8000H - 2CFFFFH
88
32K-WORD
2C0000H - 2C7FFFH
87
32K-WORD
2B8000H - 2BFFFFH
86
32K-WORD
2B0000H - 2B7FFFH
85
32K-WORD
2A8000H - 2AFFFFH
84
32K-WORD
2A0000H - 2A7FFFH
83
32K-WORD
298000H - 29FFFFH
82
32K-WORD
290000H - 297FFFH
81
32K-WORD
288000H - 28FFFFH
80
32K-WORD
280000H - 287FFFH
79
32K-WORD
278000H - 27FFFFH
78
32K-WORD
270000H - 277FFFH
77
32K-WORD
268000H - 26FFFFH
76
32K-WORD
260000H - 267FFFH
75
32K-WORD
258000H - 25FFFFH
74
32K-WORD
250000H - 257FFFH
73
32K-WORD
248000H - 24FFFFH
72
32K-WORD
240000H - 247FFFH
71
32K-WORD
238000H - 23FFFFH
70
32K-WORD
230000H - 237FFFH
69
32K-WORD
228000H - 22FFFFH
68
32K-WORD
220000H - 227FFFH
67
32K-WORD
218000H - 21FFFFH
66
32K-WORD
210000H - 217FFFH
65
32K-WORD
208000H - 20FFFFH
PLANE2 (UNIFORM PLANE)
64
32K-WORD
200000H - 207FFFH
BLOCK NUMBER
ADDRESS RANGE
63
32K-WORD
1F8000H - 1FFFFFH
62
32K-WORD
1F0000H - 1F7FFFH
61
32K-WORD
1E8000H - 1EFFFFH
60
32K-WORD
1E0000H - 1E7FFFH
59
32K-WORD
1D8000H - 1DFFFFH
58
32K-WORD
1D0000H - 1D7FFFH
57
32K-WORD
1C8000H - 1CFFFFH
56
32K-WORD
1C0000H - 1C7FFFH
55
32K-WORD
1B8000H - 1BFFFFH
54
32K-WORD
1B0000H - 1B7FFFH
53
32K-WORD
1A8000H - 1AFFFFH
52
32K-WORD
1A0000H - 1A7FFFH
51
32K-WORD
198000H - 19FFFFH
50
32K-WORD
190000H - 197FFFH
49
32K-WORD
188000H - 18FFFFH
48
32K-WORD
180000H - 187FFFH
47
32K-WORD
178000H - 17FFFFH
46
32K-WORD
170000H - 177FFFH
45
32K-WORD
168000H - 16FFFFH
44
32K-WORD
160000H - 167FFFH
43
32K-WORD
158000H - 15FFFFH
42
32K-WORD
150000H - 157FFFH
41
32K-WORD
148000H - 14FFFFH
40
32K-WORD
140000H - 147FFFH
39
32K-WORD
138000H - 13FFFFH
38
32K-WORD
130000H - 137FFFH
37
32K-WORD
128000H - 12FFFFH
36
32K-WORD
120000H - 127FFFH
35
32K-WORD
118000H - 11FFFFH
34
32K-WORD
110000H - 117FFFH
33
32K-WORD
108000H - 10FFFFH
PLANE1 (UNIFORM PLANE)
32
32K-WORD
100000H - 107FFFH
31
32K-WORD
0F8000H - 0FFFFFH
30
32K-WORD
0F0000H - 0F7FFFH
29
32K-WORD
0E8000H - 0EFFFFH
28
32K-WORD
0E0000H - 0E7FFFH
27
32K-WORD
0D8000H - 0DFFFFH
26
32K-WORD
0D0000H - 0D7FFFH
25
32K-WORD
0C8000H - 0CFFFFH
24
32K-WORD
0C0000H - 0C7FFFH
23
32K-WORD
0B8000H - 0BFFFFH
22
32K-WORD
0B0000H - 0B7FFFH
21
32K-WORD
0A8000H - 0AFFFFH
20
32K-WORD
0A0000H - 0A7FFFH
19
32K-WORD
098000H - 09FFFFH
18
32K-WORD
090000H - 097FFFH
17
32K-WORD
088000H - 08FFFFH
16
32K-WORD
080000H - 087FFFH
15
32K-WORD
078000H - 07FFFFH
14
32K-WORD
070000H - 077FFFH
13
32K-WORD
068000H - 06FFFFH
12
32K-WORD
060000H - 067FFFH
11
32K-WORD
058000H - 05FFFFH
10
32K-WORD
050000H - 057FFFH
9
32K-WORD
048000H - 04FFFFH
8
32K-WORD
040000H - 047FFFH
7
32K-WORD
038000H - 03FFFFH
6
32K-WORD
030000H - 037FFFH
5
32K-WORD
028000H - 02FFFFH
4
32K-WORD
020000H - 027FFFH
3
32K-WORD
018000H - 01FFFFH
2
32K-WORD
010000H - 017FFFH
1
32K-WORD
008000H - 00FFFFH
PLANE0 (UNIFORM PLANE)
0
32K-WORD
000000H - 007FFFH
Figure 2.1 Top Parameter Memory Map
- 6 -
W28F641B/T
Publication Release Date: March 27, 2003
BLOCK NUMBER
ADDRESS RANGE
134
32K-WORD
3F8000H - 3FFFFFH
133
32K-WORD
3F0000H - 3F7FFFH
132
32K-WORD
3E8000H - 3EFFFFH
131
32K-WORD
3E0000H - 3E7FFFH
130
32K-WORD
3D8000H - 3DFFFFH
129
32K-WORD
3D0000H - 3D7FFFH
128
32K-WORD
3C8000H - 3CFFFFH
127
32K-WORD
3C0000H - 3C7FFFH
126
32K-WORD
3B8000H - 3BFFFFH
125
32K-WORD
3B0000H - 3B7FFFH
124
32K-WORD
3A8000H - 3AFFFFH
123
32K-WORD
3A0000H - 3A7FFFH
122
32K-WORD
398000H - 39FFFFH
121
32K-WORD
390000H - 397FFFH
120
32K-WORD
388000H - 38FFFFH
119
32K-WORD
380000H - 387FFFH
118
32K-WORD
378000H - 37FFFFH
117
32K-WORD
370000H - 377FFFH
116
32K-WORD
368000H - 36FFFFH
115
32K-WORD
360000H - 367FFFH
114
32K-WORD
358000H - 35FFFFH
113
32K-WORD
350000H - 357FFFH
112
32K-WORD
348000H - 34FFFFH
111
32K-WORD
340000H - 347FFFH
110
32K-WORD
338000H - 33FFFFH
109
32K-WORD
330000H - 337FFFH
108
32K-WORD
328000H - 32FFFFH
107
32K-WORD
320000H - 327FFFH
106
32K-WORD
318000H - 31FFFFH
105
32K-WORD
310000H - 317FFFH
104
32K-WORD
308000H - 30FFFFH
PLANE3 (UNIFORM PLANE)
103
32K-WORD
300000H - 307FFFH
102 32K-WORD
2F8000H - 2FFFFFH
101 32K-WORD
2F0000H - 2F7FFFH
100 32K-WORD
2E8000H - 2EFFFFH
99
32K-WORD
2E0000H - 2E7FFFH
98
32K-WORD
2D8000H - 2DFFFFH
97
32K-WORD
2D0000H - 2D7FFFH
96
32K-WORD
2C8000H - 2CFFFFH
95
32K-WORD
2C0000H - 2C7FFFH
94
32K-WORD
2B8000H - 2BFFFFH
93
32K-WORD
2B0000H - 2B7FFFH
92
32K-WORD
2A8000H - 2AFFFFH
91
32K-WORD
2A0000H - 2A7FFFH
90
32K-WORD
298000H - 29FFFFH
89
32K-WORD
290000H - 297FFFH
88
32K-WORD
288000H - 28FFFFH
87
32K-WORD
280000H - 287FFFH
86
32K-WORD
278000H - 27FFFFH
85
32K-WORD
270000H - 277FFFH
84
32K-WORD
268000H - 26FFFFH
83
32K-WORD
260000H - 267FFFH
82
32K-WORD
258000H - 25FFFFH
81
32K-WORD
250000H - 257FFFH
80
32K-WORD
248000H - 24FFFFH
79
32K-WORD
240000H - 247FFFH
78
32K-WORD
238000H - 23FFFFH
77
32K-WORD
230000H - 237FFFH
76
32K-WORD
228000H - 22FFFFH
75
32K-WORD
220000H - 227FFFH
74
32K-WORD
218000H - 21FFFFH
73
32K-WORD
210000H - 217FFFH
72
32K-WORD
208000H - 20FFFFH
PLANE2 (UNIFORM PLANE)
71
32K-WORD
200000H - 207FFFH


BLOCK NUMBER
ADDRESS RANGE
70
32K-WORD
1F8000H - 1FFFFFH
69
32K-WORD
1F0000H - 1F7FFFH
68
32K-WORD
1E8000H - 1EFFFFH
67
32K-WORD
1E0000H - 1E7FFFH
66
32K-WORD
1D8000H - 1DFFFFH
65
32K-WORD
1D0000H - 1D7FFFH
64
32K-WORD
1C8000H - 1CFFFFH
63
32K-WORD
1C0000H - 1C7FFFH
62
32K-WORD
1B8000H - 1BFFFFH
61
32K-WORD
1B0000H - 1B7FFFH
60
32K-WORD
1A8000H - 1AFFFFH
59
32K-WORD
1A0000H - 1A7FFFH
58
32K-WORD
198000H - 19FFFFH
57
32K-WORD
190000H - 197FFFH
56
32K-WORD
188000H - 18FFFFH
55
32K-WORD
180000H - 187FFFH
54
32K-WORD
178000H - 17FFFFH
53
32K-WORD
170000H - 177FFFH
52
32K-WORD
168000H - 16FFFFH
51
32K-WORD
160000H - 167FFFH
50
32K-WORD
158000H - 15FFFFH
49
32K-WORD
150000H - 157FFFH
48
32K-WORD
148000H - 14FFFFH
47
32K-WORD
140000H - 147FFFH
46
32K-WORD
138000H - 13FFFFH
45
32K-WORD
130000H - 137FFFH
44
32K-WORD
128000H - 12FFFFH
43
32K-WORD
120000H - 127FFFH
42
32K-WORD
118000H - 11FFFFH
41
32K-WORD
110000H - 117FFFH
40
32K-WORD
108000H - 10FFFFH
PLANE1 (UNIFORM PLANE)
39
32K-WORD
100000H - 107FFFH
38
32K-WORD
0F8000H - 0FFFFFH
37
32K-WORD
0F0000H - 0F7FFFH
36
32K-WORD
0E8000H - 0EFFFFH
35
32K-WORD
0E0000H - 0E7FFFH
34
32K-WORD
0D8000H - 0DFFFFH
33
32K-WORD
0D0000H - 0D7FFFH
32
32K-WORD
0C8000H - 0CFFFFH
31
32K-WORD
0C0000H - 0C7FFFH
30
32K-WORD
0B8000H - 0BFFFFH
29
32K-WORD
0B0000H - 0B7FFFH
28
32K-WORD
0A8000H - 0AFFFFH
27
32K-WORD
0A0000H - 0A7FFFH
26
32K-WORD
098000H - 09FFFFH
25
32K-WORD
090000H - 097FFFH
24
32K-WORD
088000H - 08FFFFH
23
32K-WORD
080000H - 087FFFH
22
32K-WORD
078000H - 07FFFFH
21
32K-WORD
070000H - 077FFFH
20
32K-WORD
068000H - 06FFFFH
19
32K-WORD
060000H - 067FFFH
18
32K-WORD
058000H - 05FFFFH
17
32K-WORD
050000H - 057FFFH
16
32K-WORD
048000H - 04FFFFH
15
32K-WORD
040000H - 047FFFH
14
32K-WORD
038000H - 03FFFFH
13
32K-WORD
030000H - 037FFFH
12
32K-WORD
028000H - 02FFFFH
11
32K-WORD
020000H - 027FFFH
10
32K-WORD
018000H - 01FFFFH
9
32K-WORD
010000H - 017FFFH
8
32K-WORD
008000H - 00FFFFH
7
4K-WORD
007000H - 007FFFH
6
4K-WORD
006000H - 006FFFH
5
4K-WORD
005000H - 005FFFH
4
4K-WORD
004000H - 004FFFH
3
4K-WORD
003000H - 003FFFH
2
4K-WORD
002000H - 002FFFH
1
4K-WORD
001000H - 001FFFH
PLANE0 (PARAMETER PLANE)
0
4K-WORD
000000H - 000FFFH
Figure 2.2 Bottom Parameter Memory Map
- 7 -
Revision A3
W28F641B/T
Table 3. Identifier Codes and OTP Address for Read Operation
CODE
ADDRESS
[A15
-
A0]
DATA
[DQ15
-
DQ0]
NOTES
Manufacture Code
Manufacture Code
0000H
00B0H
1
Top Parameter
00B0H
1, 2
Device Code
Bottom Parameter
0001H
00B1H
1, 2
Block is Unlocked
DQ0 = 0
3
Block is Locked
DQ0 = 1
3
Block is not Locked-Down
DQ1 = 0
3
Block Lock Configuration Code
Block is Locked-Down
Block Address
+2
DQ1 = 1
3
Device Configuration Code
Partition Configuration register
0006H PCRC
1,
4
OTP Lock
0080H
OTP-LK
1, 5
OTP
OTP 0081-0088H
OTP
1,
6
Notes:
1. The address A21
- A16 are shown in below table for reading the manufacturer code, device code, device configuration code
and OTP data.
2. Bottom parameter device has its parameter blocks in the plane0 (The lowest address).
Top parameter device has its parameter blocks in the plane3 (The highest address).
3. Block Address = The beginning location of a block address within the partition to which the Read Identifier Codes/OTP
command (90H) has been written.
DQ15
- DQ2 are reserved for future implementation.
4. PCRC = Partition Configuration Register Code.
5. OTP-LK = OTP Block Lock configuration.
6. OTP = OTP Block data.
Table 4. Identifier Codes and OTP Address for Read Operation on Partition Configuration
(1)
PARTITION CONFIGURATION REGISTER
(2)
PCR.10 PCR.9 PCR.8
ADDRESS (64M-bit device)
[A21
- A16]
0 0 0
00H
0
0
1
00H or 10H
0
1
0
00H or 20H
1
0
0
00H or 30H
0
1
1
00H or 10H or 20H
1
1
0
00H or 20H or 30H
1
0
1
00H or 10H or 30H
1
1
1
00H or 10H or 20H or 30H
Notes:
1. The address to read the identifier codes or OTP data is dependent on the partition which is selected when writing the Read
Identifier Codes/OTP command (90H).
2. Refer to Table 12 for the partition configuration register.
- 8 -
W28F641B/T
Publication Release Date: March 27, 2003
- 9 -
Revision A3

Customer programmable Area Lock Bit (DQ1)
Reserved for Future Implementation
(DQ15-DQ2)
Factory Programmed Area
[A21-A0]
000088H

000085H
000084H

000081H
000080H
Customer Programmable Area
Factory programmed Area Lock Bit (DQ0)
Figure 3. OTP Block Address Map for OTP Program (The area outside 80H~88H cannot be used.)
Table 5. Bus Operations
(1, 2)
MODE NOTE
#RESET
#CE
#OE
#WE
ADDRESS
V
PP
DQ0
-
15
Read Array
6
V
IH
V
IL
V
IL
V
IH
X X
DOUT
Output Disable
V
IH
V
IL
V
IH
V
IH
X X
High
Z
Standby
V
IH
V
IH
X X
X
X High
Z
Reset 3
V
IL
X X X
X X High
Z
Read Identifier
Codes/OTP
6 V
IH
V
IL
V
IL
V
IH
See
Table 3, 4
X
See
Table 3, 4
Read Query
6,7
V
IH
V
IL
V
IL
V
IH
See
Appendix
X
See
Appendix
Write
4,5,6
V
IH
V
IL
V
IH
V
IL
X X DIN
Notes:
1. Refer to DC Characteristics. When V
PP
V
PPLK
, memory contents can be read, but cannot be altered.
2. X can be V
IL
or V
IH
for control pins and addresses, and V
PPLK
or V
PPH1/2
for V
PP
. See DC Characteristics for V
PPLK
and V
PPH1/2
voltages.
3. #RESET at V
SS
0.2V ensures the lowest power consumption.
4. Command writes involving block erase, (page buffer) program or OTP program are reliably executed when V
PP
= V
PPH1/2
and
V
DD
= 2.7V to 3.6V.
Command writes involving full chip erase are reliably executed when V
PP
= V
PPH1
and V
DD
= 2.7V to 3.6V.
5. Refer to Table 6 for valid DIN during a write operation.
6. Never hold #OE low and #WE low at the same timing.
7. Refer to Appendix for more information about query code.
W28F641B/T
Table 6. Command Definitions
(11)
FIRST BUS CYCLE
SECOND BUS CYCLE
COMMAND
BUS
CYCLES
REQ'D.
NOTE
Oper
(1)
Addr
(2)
Data Oper
(1)
Addr
(2)
Data
(3)
Read Array
1
Write
PA
FFH
Read Identifier Codes/OTP
2
4
Write
PA
90H
Read IA or OA ID or OD
Read Query
2
4 Write
PA
98H
Read
QA QD
Read Status Register
2
Write
PA
70H
Read
PA
SRD
Clear Status Register
1
Write
PA
50H
Block Erase
2
5
Write
BA
20H
Write
BA
D0H
Full Chip Erase
2
5, 9
Write
X
30H
Write
X
D0H
Program 2
5,
6
Write
WA
40H or
10H
Write WA WD
Page Buffer Program
4
5, 7
Write
WA
E8H
Write
WA
N-1
Block Erase and (Page Buffer)
Program Suspend
1 8,
9
Write
PA
B0H
Block Erase and (Page Buffer)
Program Resume
1 8,
9
Write
PA
D0H
Set Block Lock Bit
2
Write
BA
60H
Write
BA
01H
Clear Block Lock Bit
2
10
Write
BA
60H
Write
BA
D0H
Set Block Lock-down Bit
2
Write
BA
60H
Write
BA
2FH
OTP Program
2
9
Write
OA
C0H
Write
OA
OD
Set Partition configuration
Register
2
Write
PCRC
60H
Write
PCRC
04H
Notes:
1. Bus operations are defined in Table 5.
2. All address which is written at the first bus cycle should be the same as the address which is written at the second bus cycle.
X = Any valid address within the device.
PA = Address within the selected partition.
IA = Identifier codes address (See Table 3 and Table 4).
QA = Query codes address. Refer to Appendix for details.
BA = Address within the block being erased, set/cleared block lock bit or set block lock-down bit.
WA = Address of memory location for the Program command or the first address for the Page Buffer Program command.
OA = Address of OTP block to be read or programmed (See Figure 3).
PCRC = Partition configuration register code presented on the address A0
- A15.
3. ID = Data read from identifier codes. (See Table 3 and Table 4).
QD = Data read from query database. Refer to Appendix for details.
SRD = Data read from status register. See Table 10 and Table 11 for a description of the status register bits.
WD = Data to be programmed at location WA. Data is latched on the rising edge of #WE or #CE (whichever goes high first)
during command write cycles.
OD = Data within OTP block. Data is latched on the rising edge of #WE or #CE (whichever goes high first) during command
write cycles.
N-1 = N is the number of the words to be loaded into a page buffer.
4. Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock
configuration code, partition configuration register code and the data within OTP block (See Table 3 and Table 4). The Read
Query command is available for reading CFI (Common Flash Interface) information.
5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block
can be erased or programmed when #RESET is V
IH
.
6. Either 40H or 10H are recognized by the CUI (Command User Interface) as the program setup.
- 10 -
W28F641B/T
Publication Release Date: March 27, 2003
7. Following the third bus cycle, inputs the program sequential address and write data of "N" times. Finally, input the any valid
address within the target block to be programmed and the confirm command (D0H). Refer to Appendix for details.
8. If the program operation in one partition is suspended and the erase operation in other partition is also suspended, the
suspended program operation should be resumed first, and then the suspended erase operation should be resumed next.
9. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted while
the block erase operation is being suspended.
10. Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when #WP is V
IL
. When #WP is
V
IH
, lock-down bit is disabled and the selected block is unlocked regardless of lock-down configuration.
11. Commands other than those shown above are reserved by Winbond for future device implementations and should not be
used.
Table 7. Functions of Block Lock
(5)
and Block Lock-Down
CURRENT STATE
State #WP
DQ1
(1)
DQ0
(1)
State Name
ERASE/PROGRAM
ALLOWED
(2)
[000] 0 0 0 Unlocked
Yes
[001]
(3)
0 0 1 Locked
No
[011] 0 1 1 Locked-down
No
[100] 1 0 0 Unlocked
Yes
[101]
(3)
1 0 1 Locked
No
[110]
(4)
1 1 0 Lock-down
Disable
Yes
[111] 1 1 1 Lock-down
Disable
No
Notes:
1. DQ0 = 1: a block is locked; DQ0 = 0: a block is unlocked.
DQ1 = 1: a block is locked-down; DQ1 = 0: a block is not locked-down.
2. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program
operations.
3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (#WP = 0) or [101] (#WP
= 1), regardless of the states before power-off or reset operation.
4. When #WP is driven to V
IL
in [110] state, the state changes to [011] and the blocks are automatically locked.
5. OTP (One Time Program) block has the lock function, which is different from those described above.
Table 8. Block Locking State Transitions upon Command Write
(4)
CURRENT STATE
RESULT AFTER LOCK COMMAND WRITTEN (NEXT STATE)
State #WP
DQ1
DQ0
Set Lock
(1)
Clear Lock
(1)
Set Lock-down
(1)
[000] 0 0 0
[001]
No
Change
[011]
(2)
[001] 0 0 1 No
Change
(3)
[000] [011]
[011]
0
1
1
No Change
No Change
No Change
[100] 1 0 0
[101]
No
Change
[111]
(2)
[101] 1 0 1 No
Change
[100]
[111]
[110] 1 1 0
[111]
No
Change
[111]
(2)
[111]
1
1
1
No Change
[110]
No Change
- 11 -
Revision A3
W28F641B/T
Notes:
1. "Set Lock" means Set Block Lock Bit command, "Clear Lock" means Clear Block Lock Bit command and "Set Lock-down"
means Set Block Lock-Down Bit command.
2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ0 = 0), the corresponding block is locked-
down and automatically locked at the same time.
3. "No Change" means that the state remains unchanged after the command written.
4. In this state transitions table, assumes that #WP is not changed and fixed V
IL
or V
IH
.
Table 9. Block Locking State Transitions upon #WP Transition
(4)
CURRENT STATE
RESULT AFTER #WP TRANSITION
(NEXT STATE)
PREVIOUS STATE
State #WP
DQ1
DQ0 #WP = 0
1
(1)
#WP = 1
0
(1)
- [000]
0
0
0
[100]
-
- [001]
0
0
1
[101]
-
[110]
(2)
[110] -
Other than [110]
(2)
[011] 0 1
1
[111] -
- [100]
1
0
0 -
[000]
- [101]
1
0
1 -
[001]
- [110]
1
1
0 -
[011]
(3)
- [111]
1
1
1 -
[011]
Notes:
1. "#WP = 01" means that #WP is driven to V
IH
and "#WP = 10" means that #WP is driven to V
IL
.
2. State transition from the current state [011] to the next state depends on the previous state.
3. When #WP is driven to V
IL
in [110] state, the state changes to [011] and the blocks are automatically locked.
4. In this state transitions table, assumes that lock configuration commands are not written in previous, current and next state.
- 12 -
W28F641B/T
Publication Release Date: March 27, 2003
Table 10. Status Register Definition
R R R R R R R R
15 14 13 12 11 10 9 8
WSMS BESS BEFCES
PBPOPS VPPS PBPSS DPS
R
7 6 5 4 3 2 1 0
SR.15
-
SR.8 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
SR.6 = BLOCK ERASE SUSPEND STATUS (BESS)
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
SR.5 = BLOCK ERASE AND FULL CHIP ERASE STATUS
(BEFCES)
1 = Error in Block Erase or Full Chip Erase
0 = Successful Block Erase or Full Chip Erase
SR.4 = (PAGE BUFFER) PROGRAM AND OTP PROGRAM
STATUS (PBPOPS)
1 = Error in (Page Buffer) Program or OTP Program
0 = Successful (Page Buffer) Program or OTP Program
SR.3 = V
PP
STATUS (VPPS)
1 = V
PP
LOW Detect, Operation Abort
0 = V
PP
OK
SR.2 = (PAGE BUFFER) PROGRAM SUSPEND STATUS
(PBPSS)
1 = (Page Buffer) Program Suspended
0 = (Page Buffer) Program in Progress/Completed
SR.1 = DEVICE PROTECT STATUS (DPS)
1 = Erase or Program Attempted on a Locked Block,
Operation Abort
0 = Unlocked
SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
NOTES:
Status Register indicates the status of the partition, not WSM
(Write State Machine). Even if the SR.7 is "1", the WSM may
be occupied by the other partition when the device is set to
2, 3 or 4 partitions configuration.
If both SR.5 and SR.4 are "1"s after a block erase, full chip
erase, page buffer program, set/clear block lock bit, set block
lock-down bit, set partition configuration register attempt, an
improper command sequence was entered.
SR.3 does not provide a continuous indication of V
PP
level.
The WSM interrogates and indicates the V
PP
level only after
Block Erase, Full Chip Erase, (Page Buffer) Program or OTP
Program command sequences. SR.3 is not guaranteed to
report accurate feedback when V
PP
V
PPH1
, V
PPH2
or V
PPLK
.
SR.1 does not provide a continuous indication of block lock
bit. The WSM interrogates the block lock bit only after Block
Erase, Full Chip Erase, (Page Buffer) Program or OTP
Program command sequences. It informs the system,
depending on the attempted operation, if the block lock bit is
set. Reading the block lock configuration codes after writing
the Read Identifier Codes/OTP command indicates block
lock bit status.
SR.15
- SR.8 and SR.0 are reserved for future use and
should be masked out when polling the status register.
Check SR.7 to determine block erase, full chip erase, (page
buffer) program or OTP program completion. SR.6
- SR.1
are invalid while SR.7 = "0".




- 13 -
Revision A3
W28F641B/T
Table 11. Extended Status Register Definition
R R R R R R R R
15 14 13 12 11 10 9 8
SMS R R R R R R R
7 6 5 4 3 2 1 0
XSR.15
-
8 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
XSR.7 = STATE MACHINE STATUS (SMS)
1 = Page Buffer Program available
0 = Page Buffer Program not available
XSR.6-0 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
NOTES:
After issue a Page Buffer Program command (E8H), XSR.7
= "1" indicates that the entered command is accepted. If
XSR.7 is "0", the command is not accepted and a next
Page Buffer Program command (E8H) should be issued
again to check if page buffer is available or not.
XSR.15
- 8 and XSR.6 - 0 are reserved for future use and
should be masked out when polling the extended status
register.
- 14 -
W28F641B/T
Publication Release Date: March 27, 2003
Table 12. Partition Configuration Register Definition
R R R R R
PC2
PC1
PC0
15 14 13 12 11 10 9 8
R R R R R R R R
7 6 5 4 3 2 1 0
PCR.15
- 11 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
PCR.10
- 8 = PARTITION CONFIGURATION (PC2-0)
000 = No partitioning. Dual Work is not allowed.
001 = Plane1-3 are merged into one partition.
(default in a bottom parameter device)
010 = Plane 0
- 1 and Plane2 - 3 are merged into one
partition respectively.
100 = Plane 0
- 2 are merged into one partition.
(default in a top parameter device)
011 = Plane 2
- 3 are merged into one partition.
There are three partitions in this configuration.
Dual work operation is available between any
two partitions.
110 = Plane 0
- 1 are merged into one partition.
There are three partitions in this configuration.
Dual work operation is available between any
two partitions.
101 = Plane 1
- 2 are merged into one partition.
There are three partitions in this configuration.
Dual work operation is available between any
two partitions.
111 = There are four partitions in this configuration.
Each plane corresponds to each partition respectively.
Dual work operation is available between any two
partitions.
PCR.7
- 0 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
NOTES:
After power-up or device reset, PCR10
- 8 (PC2 - 0) is set
to "001" in a bottom parameter device and "100" in a top
parameter device.
See Figure 4 for the detail on partition configuration.
PCR.15
- 11 and PCR.7 - 0 are reserved for future use
and should be masked out when checking the partition
configuration register.
PC2 PC1 PC0
PARTITIONING FOR DUAL WORK
PC2 PC1 PC0
PARTITIONING FOR DUAL WORK
PARTITION0 PARTITION2
PARTITION1
PARTITION0

0

0

0


0

1

1
PARTITION1
PARTITION0
PARTITION2 PARTITION1
PARTITION0

0

0

1

1

1

0
PARTITION1 PARTITION0
PARTITION2
PARTITION1
PARTITION0

0

1

0

1

0

1
PARTITION1 PARTITION0
PARTITION3 PARTITION2 PARTITION1 PARTITION0

1

0

0

1

1

1
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
PLANE3
PLANE2
PLANE1
PLANE0
Figure 4. Partition Configuration
- 15 -
Revision A3
W28F641B/T
4. ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Operating Temperature
During Read, Erase and Program ..................................................................................... -40
C to +85C
(1)
Storage Temperature
During under Bias ................................................................................................................ -40
C to +85C
During non Bias .............................. .................................................................................. .. -65
C to +125C
Voltage On Any Pin
(except V
DD
and V
PP
) ......... .......................................................................................... -0.5V to V
DD
+0.5V
(2)
V
DD
and V
DDQ
Supply Voltage................................................................................................. -0.2V to +3.9V
(2)
V
PP
Supply Voltage..................................................................................................... .... -0.2V to +12.6V
(2,3,4)
Output Short Circuit Current............. .............................................................................. ...................100 mA
(5)
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress
ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond
the "Operating Conditions" may affect device reliability.
Notes:
1. Operating temperature is for extended temperature product defined by this specification.
2. All specified voltages are with respect to V
SS
. Minimum DC voltage is -0.5V on input/output pins and -0.2V on V
DD
and V
PP
pins. During transitions, this level may undershoot to -2.0V for periods <20 nS. Maximum DC voltage on input/output pins is
V
DD
+0.5V, which, during transitions, may overshoot to V
DD
+2.0V for periods <20 nS.
3. Maximum DC voltage on V
PP
may overshoot to +13.0V for periods <20 nS.
4. V
PP
erase/program voltage is normally 2.7V to 3.6V. Applying 11.7V to 12.3V to V
PP
during erase/program can be done for a
maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. V
PP
may be connected to 11.7V to
12.3V for a total of 80 hours maximum.
5. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Conditions
PARAMETER SYM.
MIN.
TYP.
MAX.
UNIT
NOTE
Operating Temperature TA
-40
+25
+85
C
V
DD
Supply Voltage
V
DD
2.7 3.0 3.6
V
1
I/O Supply Voltage
V
DDQ
2.7 3.0 3.6 V 1
V
PP
Voltage when Used as a Logic Control
V
PPH1
1.65 3.0 3.6 V 1
V
PP
Supply Voltage
V
PPH2
11.7 12 12.3 V 1,
2
Main Block Erase Cycling: V
PP
= V
PPH1
100,000
Cycles
Parameter Block Erase Cycling: V
PP
= V
PPH1
100,000
Cycles
Main Block Erase Cycling: V
PP
= V
PPH2
, 80 hrs.
1,000
Cycles
Parameter Block Erase Cycling: V
PP
= V
PPH2
, 80 hrs.
1,000
Cycles
Maximum V
PP
hours at V
PPH2
80
Hours
Notes:
1. See DC Characteristics tables for voltage range-specific specification.
2. Applying V
PP
= 11.7V to 12.3V during a erase or program can be done for a maximum of 1,000 cycles on the main blocks and
1,000 cycles on the parameter blocks. A permanent connection to V
PP
= 11.7V to 12.3V is not allowed and can cause
damage to the device.
- 16 -
W28F641B/T
Publication Release Date: March 27, 2003
Capacitance
(1)
T
A
= +25
C, f = 1 MHz
PARAMETER SYM.
TYP.
MAX.
UNIT
CONDITION
Input Capacitance
C
IN
6 8 pF
V
IN
= 0.0V
Output Capacitance
C
OUT
10 12 pF
V
OUT
= 0.0V
Note: Sampled, not 100% tested.
AC Input/Output Test Conditions
VDDQ
0.0
INPUT
VDDQ/2
OUTPUT
TEST POINTS
VDDQ/2
AC test inputs are driven at V
DDQ
(min) for a Logic "1" and 0.0V for a Logic "0".
Input timing begins, and output timing ends at V
DDQ
/2. Input rise and fall times (10% to 90%) < 5 nS.
Worst case speed conditions are when V
DD
= V
DD
(min).
Figure 5. Transient Input/Output Reference Waveform for V
DD
= 2.7V to 3.6V
VDDQ(min)/2
Includes Jig Capacitance
1N914
DEVICE
UNDER
TEST
OUT
=3.3K ohm
R
L
C
L
C
L
Figure 6. Transient Equivalent Testing Load Circuit
Table 13. Configuration Capacitance Loading Value
TEST CONFIGURATION
C
L
(PF)
V
DD
= 2.7V to 3.6V
50
- 17 -
Revision A3
W28F641B/T
DC Characteristics
V
DD
= 2.7V to 3.6V
PARAMETER SYM.
TEST
CONDITIONS
Min. Typ. Max.
UNIT
Input Load Current
(note 1)
I
LI
-1.0
+1.0
A
Output Leakage Current
(note1)
I
LO
V
DD
= V
DD
Max.,
V
DDQ
= V
DDQ
Max.,
V
IN
/V
OUT
= V
DDQ
or V
SS
-1.0 +1.0
A
V
DD
Standby Current
(note 1)
I
CCS
V
DD
= V
DD
Max. #CE =
#RESET = V
DDQ
0.2V,
#WP = V
DDQ
or V
SS
4
20
A
V
DD
Automatic Power Saving Current
(note 1, 4)
I
CCAS
V
DD
= V
DD
Max. #CE = V
SS
0.2V, #WP = V
DDQ
or V
SS
4
20
A
V
DD
Reset Power-Down Current
(note 1)
I
CCD
#RESET = V
SS
0.2V
4
20
A
Average V
DD
Read Current
Normal Mode (note1, 7)
15
25
mA
Average V
DD
Read Current
Page Mode (note1, 7)
8 Word
Read
I
CCR
V
DD
= V
DD
Max.,
#CE = V
IL
, #OE = V
IH
,
f = 5 MHz
5
10
mA
V
PP
= V
PPH1
20
60
mA
V
DD
(Page Buffer) Program Current
(note 1, 5, 7)
I
CCW
V
PP
= V
PPH2
10
20
mA
V
PP
= V
PPH1
10
30
mA
V
DD
Block Erase, Full Chip Erase
Current (note 1, 5, 7)
I
CCE
V
PP
= V
PPH2
10
30
mA
V
DD
(Page Buffer) Program or Block
Erase Suspend Current (note 1, 2, 7)
I
CCWS
I
CCES
#CE = V
IH
10
200
A
V
PP
Standby or Read Current
(note 1, 6, 7)
I
PPS
I
PPR
V
PP
V
DD
2 5
A
V
PP
= V
PPH1
2
5
A
V
PP
(Page Buffer) Program Current
(note 1, 5, 6, 7)
I
PPW
V
PP
= V
PPH2
10
30
mA
V
PP
= V
PPH1
2
5
A
V
PP
Block Erase, Full Chip Erase
Current (note 1, 5, 6, 7)
I
PPE
V
PP
= V
PPH2
5
15
mA
V
PP
= V
PPH1
2
5
A
V
PP
(Page Buffer) Program Suspend
Current (note 1, 6, 7)
I
PPWS
V
PP
= V
PPH2
10
200
A
V
PP
= V
PPH1
2
5
A
V
PP
Block Erase Suspend Current (note
1, 6, 7)
I
PPES
V
PP
= V
PPH2
10
200
A
- 18 -
W28F641B/T
Publication Release Date: March 27, 2003
DC Characteristics, continued
V
DD
= 2.7V
- 3.6V
PARAMETER SYM.
TEST
CONDITIONS
Min.
Typ.
Max.
UNIT
Input Low Voltage (note 5)
V
IL
-0.4
0.4
V
Input High Voltage (note 5)
V
IH
2.4
V
DDQ
+0.4
V
Output Low Voltage (note 5)
V
OL
V
DD
= V
DD
Min., V
DDQ
=
V
DDQ
Min., I
OL
= 100
A
0.2
V
Output High Voltage (note 5)
V
OH
V
DD
= V
DD
Min., V
DDQ
=
V
DDQ
Min., I
OH
= -100
A
V
DDQ
-0.2
V
V
PP
Lockout during Normal Operations
(note 3, 5, 6)
V
PPLK
0.4
V
V
PP
during Block Erase, Full Chip
Erase, (Page Buffer) Program or OTP
Program Operations (note 6)
V
PPH1
1.65
3.0
3.6
V
V
PP
during Block Erase, (Page Buffer)
Program or OTP Program Operations
(note 6)
V
PPH2
11.7 12 12.3 V
V
DD
Lockout Voltage
V
LKO
1.5
V
Notes:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
DD
= 3.0V and T
A
= +25
C unless
V
DD
is specified.
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or (page buffer) program is executed while in block erase
suspend mode, the device's current draw is the sum of I
CCES
and I
CCR
or I
CCW
. If read is executed while in (page buffer)
program suspend mode, the device's current draw is the sum of I
CCWS
and I
CCR
.
3. Block erases, full chip erase, (page buffer) program and OTP program are inhibited when V
PP
V
PPLK
, and not guaranteed in
the range between V
PPLK
(max.) and V
PPH1
(min.), between V
PPH1
(max.) and V
PPH2
(min.) and above V
PPH2
(max.).
4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle completion.
Standard address access timings (t
AVQV
) provide new data when address are changed.
5. Sampled, not 100% tested.
6. V
PP
is not used for power supply pin. With V
PP
V
PPLK
, block erase, full chip erase, (page buffer) program and OTP program
cannot be executed and should not be attempted.
Applying 12V 0.3V to V V
PP
provides fast erasing or fast programming mode. In this mode, V
PP
is power supply pin and
supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace widths and
layout considerations given to the V
DD
power bus.
Applying 12V 0.3V to V
PP
during erase/program can only be done for a maximum of 1,000 cycles on each block. V
PP
may be
connected to 12V 0.3V for a total of 80 hours maximum.
7. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.






- 19 -
Revision A3
W28F641B/T
AC Characteristics - Read-only Operations(1)
V
DD
= 2.7V to 3.6V, T
A
= -40
C to +85C
PARAMETER SYM.
MIN.
MAX.
UNIT
Read Cycle Time
t
AVAV
80 nS
Address to Output Delay
t
AVQV
80
nS
#CE to Output Delay (note 3)
t
ELQV
80
nS
Page Address Access Time
t
APA
35
nS
#OE to Output Delay (note 3)
t
GLQV
20
nS
#RESET High to Output Delay
t
PHQV
150
nS
#CE or #OE to Output in High Z, whichever Occurs First (note 2)
t
EHQZ,
t
GHQZ,
20
nS
#CE to Output in Low Z (note 2)
t
ELQX
0 nS
#OE to Output in Low Z (note 2)
t
GLQX
0 nS
Output Hold from first Occurring Address, #CE or #OE Change
(note 2)
t
OH
0 nS
Address Setup to #CE, #OE, Going Low for Reading Status
Register (note 4,6)
t
AVEL,
t
AVGL
10
nS
Address Hold from #CE, #OE, Going Low for Reading Status
Register (note 5,6)
t
ELAX,
t
GLAX
30
nS
#CE, #OE Pulse Width High for Reading Status Register (note 6)
t
EHEL,
t
GHGL
30
nS
Notes:
1. See AC Input/Output Reference Waveform for timing measurements and maximum allowable input slew rate.
2. Sampled, not 100% tested.
3. #OE may be delayed up to t
ELQV
to t
GLQV
after the falling edge of #CE without impact to t
ELQV
.
4. Address setup time (t
AVEL
to t
AVGL
) is defined from the falling edge of #CE or #OE (whichever goes low last).
5. Address hold time (t
ELAX
to t
GLAX
) is defined from the falling edge of #CE or #OE (whichever goes low last).
6. Specifications t
AVEL
, t
AVGL
, t
ELAX
, t
GLAX
, and t
EHEL,
, t
GHGL
for read operations apply to only status register read operations.
- 20 -
W28F641B/T
Publication Release Date: March 27, 2003
VIH
VIL
A21-0(A)
#OE(G)
#WE(W)
#CE(E)
VIH
VIL
Vaild Address
VIH
VIL
VIH
VIL
VIH
VIL
DQ15-0 (D/Q)
VOH
VOL
#RESET(P)
HIGH Z
t
GLQV
t
ELQX
t
GLQX
t
OH
Valid Output
t
AVAV
t
ELAX
t
PHQV
t
GHQZ
t
EHQZ
t
AVQV
t
EHEL
t
AVEL
t
GLAX
t
AVGL
t
GHGL
t
ELQV
Figure 7. AC Waveform for Single Asynchronous Read Operations from Status Register,
Identifier codes, OTP Block or Query Code
- 21 -
Revision A3
W28F641B/T
VIH
VIL
#OE(G)
#WE(W)
#CE(E)
VIH
VIL
VIH
VIL
VIH
VIL
DQ15-0 (D/Q)
VOH
VOL
#RESET(P)
HIGH Z
t
GLQV
t
ELQX
t
GLQX
t
OH
t
AVQV
t
ELQV
t
PHQV
A2-0(A)
VIH
VIL
Valid Address
t
GHQZ
t
EHQZ
A21-3(A)
VIH
VIL
Valid Address
Valid
Address
Valid
Address
Valid
Address
Valid
Address
Valid
Address
Valid
Address
Valid
Address
t
APA
Figure 8. AC Waveform for Asynchronous Page Mode Read Operations from Main Blocks or Parameter Blocks
- 22 -
W28F641B/T
Publication Release Date: March 27, 2003
AC Characteristics - Write Operations
(1, 2)
V
DD
= 2.7V to 3.6V, T
A
= -40
C to +85C
PARAMETER SYMBOL
MIN.
MAX.
UNIT
Write Cycle Time
t
AVAV
80 nS
#RESET High Recovery to #WE(#CE) Going Low (note 3)
t
PHWL
(t
PHEL
) 150
nS
#CE(#WE) Setup to #WE(#CE) Going Low
t
ELWL
(t
WLEL
) 0
nS
#WE(#CE) Pulse Width (note 4)
t
WLWH
(t
ELEH
) 50
nS
Data Setup to #WE(#CE) Going High (note 8)
t
DVWH
(t
DVEH
) 40
nS
Address Setup to #WE(#CE) Going High (note 8)
t
AVWH
(t
AVEH
) 50
nS
#CE(#WE) Hold from #WE(#CE) High
t
WHEH
(t
EHWH
)
0
nS
Data Hold from #WE(#CE) High
t
WHDX
(t
EHDX
) 0
nS
Address Hold from #WE(#CE) High
t
WHAX
(t
EHAX
) 0
nS
#WE(#CE) Pulse Width High (note 5)
t
WHWL
(t
EHEL
) 30
nS
#WP High Setup to #WE(#CE) Going High (note 3)
t
SHWH
(t
SHEH
) 0
nS
V
PP
Setup to #WE(#CE) Going High (note 3)
t
VVWH
(t
VVEH
) 200
nS
Write Recovery before Read
t
WHGL
(t
EHGL
) 30
nS
#WP High Hold from Valid SRD (note 3,6)
t
QVSL
0 nS
V
PP
Hold from Valid SRD (note 3,6)
t
QVVL
0 nS
#WE(#CE) High to SR.7 Going "0" (note 3,7)
t
WHR0
(t
EHR0
) t
AVQV
+50 nS
Notes:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and OTP
program operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. A write operation can be initiated and terminated with either #CE or #WE.
3. Sampled, not 100% tested.
4. Write pulse width (t
WP
) is defined from the falling edge of #CE or #WE (whichever goes low last) to the rising edge of #CE or
#WE (whichever goes high first). Hence, t
WP
= t
WLWH
= t
ELEH
= t
WLEH
= t
ELWH
.
5. Write pulse width high (t
WPH
) is defined from the rising edge of #CE or #WE (whichever goes high first) to the falling edge of
#CE or #WE (whichever goes low last). Hence, t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
6. V
PP
should be held at V
PP
= V
PPH1/2
until determination of block erase, (page buffer) program or OTP program success
(SR.1/3/4/5 = 0) and held at V
PP
= V
PPH1
until determination of full chip erase success (SR.1/3/5 = 0).
7. t
WHR0
(t
EHR0
) after the Read Query or Read Identifier Codes/OTP command = t
AVQV
+100 nS.
8. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
configuration.

- 23 -
Revision A3
W28F641B/T
A21-0(A)
VIH
V IL
t
AVAV
#WE(W)
V IH
V IL
DQ15-0(D/Q)
VIH
D
IN
Valid
SRD
V IL
("0")
#WP(S)
IH
IL
V
V
SR.7(R)
("1")
#RESET(P)
IH
IL
V
V
PPH1,2
V
PPLK
V
IL
V
(V)
VPP
Note 1
Note 2
Note 3
Note 4
Note 5
#CE(E)
V IH
V IL
#OE(G)
V IH
VIL
Note 5,6
D
IN
Note 5,6
VVWH
t
VVEH
(t )
QVVL
t
SHWH
t
SHEH
(t )
QVSL
t
WHR0
t
EHR0
(t )
(t )
WHQV1,2,3
t
EHQV1,2,3
(t )
DVWH
t
DVEH
(t )
WHDX
t
EHDX
(t )
WLWH
t
ELEH
(t )
PHWL
t
PHEL
(t )
WHWL
t
EHEL
(t )
ELWL
t
WLEL
(t )
WHEH
t
EHWH
(t )
WHGL
t
EHGL
(t )
WHAX
t
EHAX
(t )
AVWH
t
AVEH
Valid Address
Valid Address
Valid Address
Figure 9. AC Waveform for Write Operations
Notes:
1. V
DD
power-up and standby.
2. Write each first cycle command.
3. Write each second cycle command or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. For read operation, #OE and #CE must be driven active, and #WE de-asserted.
- 24 -
W28F641B/T
Publication Release Date: March 27, 2003
Reset Operations
IH
IL
V
V
#RESET(P)
High Z
PLRH
t
(C)#RESET Rising Timing
2VPH
t
V
DD
IH
IL
V
V
#RESET(P)
PLPH
t
(A)Reset During Read Array Mode
DQ15-0(D/Q)
OH
OL
V
V
PHQV
t
Valid Output
IH
IL
V
V
#RESET(P)
PLPH
t
Abort
Complete
SR.7="1"
PHQV
t
(B)Reset During Erase or Program Mode
DQ15-0(D/Q)
OH
OL
V
V
High Z
Valid Output
DQ15-0(D/Q)
OH
OL
V
V
High Z
Valid Output
PHQV
t
V
DD
(min)
Vss
VHQV
t
Figure 10. AC Waveform for Reset Operation
Reset AC Specifications
V
DD
= 2.7V to 3.6V, T
A
= -40
C to +85C
PARAMETER SYM.
MIN.
MAX.
UNIT
#RESET Low to Reset during Read
(#RESET should be low during power-up.) (note 1, 2, 3)
t
PLPH
100 nS
#RESET Low to Reset during Erase or Program (note 1, 3, 4)
t
PLRH
22
S
V
DD
2.7V to #RESET High (note 1, 3, 5)
t
2VPH
100 nS
V
DD
2.7V to Output Delay (note 3)
t
VHQV
1 mS
- 25 -
Revision A3
W28F641B/T
Notes:
1. A reset time, t
PHQV
, is required from the later of SR.7 going "1" or #RESET going high until outputs are valid. Refer to AC
Characteristics - Read-Only Operations for t
PHQV
.
2. t
PLPH
is <100 nS the device may still reset but this is not guaranteed.
3. Sampled, not 100% tested.
4. If #RESET asserted while a block erase, full chip erase, (page buffer) program or OTP program operation is not executing,
the reset will complete within 100 nS.
5. When the device power-up, holding #RESET low minimum 100ns is required after V
DD
has been in predefined range and also
has been in stable there.
Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program
Performance
(3)
V
DD
= 2.7V to 3.6V, T
A
= -40
C to +85C
V
PP
=
V
PPH1
(IN SYSTEM)
V
PP
=
V
PPH2
(IN MANUFACTURING)
PARAMETER SYM.
PAGE BUFFER
COMMAND IS
USED OR NOT
USED
MIN. TYP.
(1)
MAX.
(2)
MIN. TYP.
(1)
MAX.
(2)
UNIT
Not Used
0.05
0.3
0.04
0.12
S
4K-Word Parameter Block
Program Time (note 2)
t
WPB
Used
0.03
0.12
0.02
0.06
S
Not Used
0.38
2.4
0.31
1.0
S
32K-Word Main Block
Program Time (note 2)
t
WMB
Used
0.24
1.0
0.17
0.5
S
Not Used
11
200
9
185
S
Word Program Time (note 2)
t
WHQV1/
t
EHQV1
Used
7
100
5
90
S
OTP Program Time (note 2)
t
WHOV1/
t
EHOV1
Not Used
36
400
27
185
S
4K-Word Parameter Block
Erase Time (note 2)
t
WHQV2/
t
EHQV2
-
0.3 4 0.2 4 S
32K-Word Main Block Erase
Time (note 2)
t
WHQV3/
t
EHQV3
-
0.6 5 0.5 5 S
Full Chip Erase Time (note 2)
80
700
S
(Page Buffer) Program
Suspend Latency Time to
Read (note 4)
t
WHRH1/
t
EHRH1
-
5
10
5
10
S
Block Erase Suspend Latency
Time to Read (note 4)
t
WHRH2/
t
EHRH2
-
5
20
5
20
S
Latency Time from Block
Erase Resume Command to
Block Erase Suspend
Command (note 5)
T
ERES
- 500
500
S
Notes:
1. Typical values measured at V
DD
= 3.0V, V
PP
= 3.0V or 12V, and T
A
= +25
C. Assumes corresponding lock bits are not set.
Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
- 26 -
W28F641B/T
Publication Release Date: March 27, 2003
4. A latency time is required from writing suspend command (#WE or #CE going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
t
ERES
and its sequence is repeated, the block erase operation may not be finished.
5. ADDITIONAL INFORMATION
Recommended Operating Conditions
At Device Power-Up
AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at
device power-up. If the timing in the figure is ignored, the device may not operate correctly.
VIH
VIL
DD
VIH
V IL
VIH
VIL
#OE
Valid Address
V
DD
V
Vss
(min)
t
VR
t
2VPH
t
PHQV
#RESET (p)
*1
Vpp
(V)
Vss
V
PPH1/2
ADDRESS
VIH
VIL
(A)
t
t
R or F
t
t
R or F
t
AVQV
#CE
(E)
t
R
t
F
t
ELQV
t
GLQV
#WE (W)
VIH
VIL
(G)
t
F
t
R
#WP
(S)
VIH
VIL
DATA (D/Q)
VOH
VOL
Valid Output
HIGH Z
*1 To prevent the unwanted writes, system designers should consider the design, which applies V
PP
to 0V during read
operations and V
PPH1/2
during write or erase operations.
Figure A-1. AC Timing at Device Power-up
For the AC specifications t
VR
, t
R
, t
F
in the figure, refer to the next page. See the "ELECTRICAL SPECIFICATIONS" described in
specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page.
- 27 -
Revision A3
W28F641B/T
Rise and Fall Time
PARAMETER SYMBOL
MIN.
MAX.
UNIT
V
DD
Rise Time (note 1)
t
VR
0.5
30000
S/ V
Input Signal Rise Time (note1, 2)
t
R
1
S/ V
Input Signal Fall Time (note1, 2)
t
F
1
S/ V
Notes:
1. Sampled, not 100% tested.
2. This specification is applied for not only the device power-up but also the normal operations.
Glitch Noises
Do not input the glitch noises which are below V
IH
(Min.) or above V
IL
(Max.) on address, data, reset,
and control signals, as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure
A-2 (a).
Input Singal
V
IH
(Min.)
Input Singal
V
IH
(Min.)
V
IL
(Max.)
Input Singal
V
IL
(Max.)
Input Singal
(a) Acceptable Glitch Noises
(b) NOT Acceptable Glitch Noises
Figure A-2. Waveform for Glitch Noises
See the "DC CHARACTERISTICS" described in specifications for
V
IH
(Min.) and
V
IL
(Max.).
- 28 -
W28F641B/T
Publication Release Date: March 27, 2003
6. ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
OPERATING
TEMPERATURE
(
C)
BOOT BLOCK
PACKAGE
W28F641BT80L 80
-40 C to 85
C
Bottom Boot
48-Pin TSOP
W28F641BB80L
80
-40 C to 85 C
Bottom Boot
48-Ball TFBGA
W28F641TT80L 80
-40 C to 85
C
Top Boot
48-Pin TSOP
W28F641TB80L
80
-40 C to 85 C
Top Boot
48-Ball TFBGA
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
- 29 -
Revision A3
W28F641B/T
7. PACKAGE DIMENSIONS
48-pin Standard Thin Small Outline Package (measured in millimeters)
0.020
0.004
0.007
0.037
0.002
MIN.
0.60
Y
L
L1
c
0.50
0.10
0.70
0.21
MILLIMETER
A
A2
b
A1
0.95
0.17
0.05
Sym. MIN.
1.20
0.27
1.05
1.00
0.22
MAX.
NOM.
0.028
0.008
0.024
0.011
0.041
0.047
0.009
0.039
NOM.
INCH
MAX.
E
H
D
0
5
0
5
e
D
18.3
18.4
18.5
19.8
20.0
20.2
11.9
12.0
12.1
0.720 0.724 0.728
0.780 0.787 0.795
0.468 0.472 0.476
0.10
0.80
0.031
0.004
0.020
0.50
e
1
48
b
E
D
Y
A1
A
A2
L1
L
c
H
D
48-ball TFBGA (8 mm x 11 mm) (measurements in millimeters)
SYMBOL
A
A1
D
D2
E
E2
y
b
e
MILLIMETER
-
-
1.05
MIN. NOM. MAX.
0.20
0.25
0.30
5.25 BASIC
3.75 BASIC
0.10 BASIC
0.37
0.40
0.43
0.75 BASIC
INCH
-
-
0.042
MIN. NOM. MAX.
0.008 0.010 0.012
7.80
8.00
8.20 0.312 0.320 0.328
0.210
0.150 BASIC
0.004 BASIC
0.015 0.016 0.017
0.030 BASIC
CONTROL DIMENSIONS ARE IN MILLIMETERS
A
B
C
D
E
F
1 2 3 4 5 6
D
D2
E
E2
e
e
SEATING PLANE
A1
A
b
10.80 11.00 11.20 0.400 0.440 0.480
G
H
- 30 -
W28F641B/T
Publication Release Date: March 27, 2003
- 31 -
Revision A3
8. VERSION HISTORY
VERSION DATE PAGE
DESCRIPTION
A1
Jan. 7, 2003
-
Initial Issued
A2
Feb. 17, 2003
29
Modify TFBGA Package Dimension drawing
A3
March 27, 2003
All
Typo Correction














Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
Taipei Office
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
Winbond Electronics (H.K.) Ltd.
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
FAX: 852-27552064
Unit 9-15, 22F, Millennium City,
TEL: 852-27513100
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
Winbond Electronics (Shanghai) Ltd.
200336 China
FAX: 86-21-62365998
27F, 2299 Yan An W. Rd. Shanghai,
TEL: 86-21-62365999
Winbond Electronics Corporation Japan
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
FAX: 81-45-4781800
7F Daini-ueno BLDG, 3-7-18
TEL: 81-45-4781881
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.