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Электронный компонент: W29EE011PT

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W29EE011
128K
8 CMOS FLASH MEMORY
Publication Release Date: February 19, 2002
- 1 - Revision A15
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
-
128 bytes per page
-
Page program cycle: 10 mS (max.)
-
Effective byte-program cycle time: 39
S
-
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
-
Active current: 25 mA (typ.)
-
Standby current: 20
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
-
Toggle bit
-
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, TSOP
(8 x 20 mm), STSOP (8 x 14 mm), and PLCC

W29EE011
- 2 -
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DQ0
DQ1
DQ2
GND
A7
A6
A5
A4
A3
A2
A1
A0
NC
A16
A15
A12
V
#WE
A14
A13
A8
A9
A11
#OE
A10
#CE
DQ7
DQ6
DQ5
DQ4
DQ3
DD
NC
32-pin
DIP
5
6
7
9
10
11
12
13
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
29
28
27
26
25
24
23
22
21
30
31
32
1
2
3
4
8
20
19
18
17
16
15
14
D
Q
1
D
Q
2
G
N
D
D
Q
3
D
Q
4
D
Q
5
D
Q
6
A14
A13
A8
A9
A11
#OE
A10
#CE
DQ7
A
1
2
A
1
6
N
C
V
D
D
#
W
E
A
1
5
32-pin
PLCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
#OE
A10
#CE
DQ7
DQ6
DQ5
DQ4
DQ3
32-pin
TSOP
A15
A12
A7
A6
A5
A4
V
#WE
A14
A13
A8
DD
A11
A9
NC
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
NC
N
C
BLOCK DIAGRAM
CONTROL
OUTPUT
BUFFER
DECODER
CORE
ARRAY
#CE
#OE
#WE
A0
.
.
A16
.
.
DQ0
DQ7
V
DD
GND
PIN DESCRIPTION
SYMBOL
PIN NAME
A0
-
A16
Address Inputs
DQ0
-
DQ7 Data Inputs/Outputs
#CE
Chip Enable
#OE
Output Enable
#WE
Write Enable
V
DD
Power Supply
GND
Ground
NC
No Connection
W29EE011
Publication Release Date: February 19, 2002
- 3 - Revision A15
FUNCTIONAL DESCRIPTION
Read Mode
The read operation of the W29EE011 is controlled by #CE and #OE, both of which have to be low for
the host to obtain data from the outputs. #CE is used for device selection. When #CE is high, the chip
is de-selected and only standby power will be consumed. #OE is the output control and is used to gate
data from the output pins. The data bus is in high impedance state when either #CE or #OE is high.
Refer to the timing waveforms for further details.
Page Write Mode
The W29EE011 is programmed on a page basis. Every page contains 128 bytes of data. If a byte of
data within a page is to be changed, data for the entire page must be loaded into the device. Any byte
that is not loaded will be erased to "FFh" during programming of the page.
The write operation is initiated by forcing #CE and #WE low and #OE high. The write procedure
consists of two steps. Step 1 is the byte-load cycle, in which the host writes to the page buffer of the
device. Step 2 is an internal programming cycle, during which the data in the page buffers are
simultaneously written into the memory array for non-volatile storage.
During the byte-load cycle, the addresses are latched by the falling edge of either #CE or #WE,
whichever occurs last. The data are latched by the rising edge of either #CE or #WE, whichever occurs
first. If the host loads a second byte into the page buffer within a byte-load cycle time (T
BLC
) of 200
S, after the initial byte-load cycle, the W29EE011 will stay in the page load cycle. Additional bytes can
then be loaded consecutively. The page load cycle will be terminated and the internal programming
cycle will start if no additional byte is loaded into the page buffer within 300
S (T
BLCO
) from the last
byte-load cycle, i.e., there is no subsequent #WE high-to-low transition after the last rising edge of
#WE. A
7
to A
16
specify the page address. All bytes that are loaded into the page buffer must have the
same page address. A
0
to A
6
specify the byte address within the page. The bytes may be loaded in
any order; sequential loading is not required.
In the internal programming cycle, all data in the page buffers, i.e., 128 bytes of data, are written
simultaneously into the memory array. Before the completion of the internal programming cycle, the
host is free to perform other tasks such as fetching data from other locations in the system to prepare
to write the next page.
Software-protected Data Write
The device provides a JEDEC-approved optional software-protected data write. Once this scheme is
enabled, any write operation requires a series of three-byte program commands (with specific data to a
specific address) to be performed before the data load operation. The three-byte load command
sequence begins the page load cycle, without which the write operation will not be activated. This write
scheme provides optimal protection against inadvertent write cycles, such as cycles triggered by noise
during system power-up and power-down.
The W29EE011 is shipped with the software data protection enabled. To enable the software data
protection scheme, perform the three-byte command cycle at the beginning of a page load cycle. The
device will then enter the software data protection mode, and any subsequent write operation must be
preceded by the three-byte program command cycle. Once enabled, the software data protection will
remain enabled unless the disable commands are issued. A power transition will not reset the software
W29EE011
- 4 -
data protection feature. To reset the device to unprotected mode, a six-byte command sequence is
required. See Table 3 for specific codes and Figure 10 for the timing diagram.
Hardware Data Protection
The integrity of the data stored in the W29EE011 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The programming and read operation are inhibited when V
DD
is
less than 3.8V.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
Data Polling (DQ
7
)-Write Status Detection
The W29EE011 includes a data polling feature to indicate the end of a programming cycle. When the
W29EE011 is in the internal programming cycle, any attempt to read DQ
7
of the last byte loaded during
the page/byte-load cycle will receive the complement of the true data. Once the programming cycle is
completed. DQ
7
will show the true data.
Toggle Bit (DQ
6
)-Write Status Detection
In addition to data polling, the W29EE011 provides another method for determining the end of a
program cycle. During the internal programming cycle, any consecutive attempts to read DQ
6
will
produce alternating 0's and 1's. When the programming cycle is completed, this toggling between 0's
and 1's will stop. The device is then ready for the next operation.
5-Volt-only Software Chip Erase
The chip-erase mode can be initiated by a six-byte command sequence. After the command loading
cycles, the device enters the internal chip erase mode, which is automatically timed and will be
completed in 50 mS. The host system is not required to provide any control or timing during this
operation.
Product Identification
The product ID operation outputs the manufacturer code and device code. Programming equipment
automatically matches the device with its proper erase and programming algorithms.
The manufacturer and device codes can be accessed by software or hardware operation. In the
software access mode, a six-byte command sequence can be used to access the product ID. A read
from address 0000H outputs the manufacturer code (DAh). A read from address 0001H outputs the
device code (C1h). The product ID operation can be terminated by a three-byte command sequence.
In the hardware access mode, access to the product ID is activated by forcing #CE and #OE low, #WE
high, and raising A9 to 12 volts.
Note: The hardware SID read function is not included in all parts; please refer to Ordering Information for details.
W29EE011
Publication Release Date: February 19, 2002
- 5 - Revision A15
TABLE OF OPERATING MODES
Operating Mode Selection
Operating Range = 0 to 70
C (Ambient Temperature), V
DD =
5V
10%, V
SS
= 0V, V
HH
= 12V
MODE
PINS
#CE #OE #WE
ADDRESS
DQ.
Read
V
IL
V
IL
V
IH
A
IN
Dout
Write
V
IL
V
IH
V
IL
A
IN
Din
Standby
V
IH
X
X X
High Z
Write Inhibit
X V
IL
X X
High Z/D
OUT
X
X V
IH
X
High Z/D
OUT
Output Disable
X V
IH
X X
High Z
5-Volt Software Chip Erase V
IL
V
IH
V
IL
A
IN
D
IN
Product ID
V
IL
V
IL
V
IH
A0 = V
IL
; A1
-
A16 = V
IL
;
A9 = V
HH
Manufacturer Code DA
(Hex)
V
IL
V
IL
V
IH
A0 = V
IH
; A1
-
A16 = V
IL
;
A9 = V
HH
Device Code
C1 (Hex)
W29EE011
- 6 -
Command Codes for Software Data Protection
BYTE SEQUENCE
TO ENABLE PROTECTION
TO DISABLE PROTECTION
ADDRESS
DATA
ADDRESS
DATA
0 Write
5555H
AAH
5555H
AAH
1 Write
2AAAH
55H
2AAAH
55H
2 Write
5555H
A0H
5555H
80H
3 Write
-
-
5555H
AAH
4 Write
-
-
2AAAH
55H
5 Write
-
-
5555H
20H
Software Data Protection Acquisition Flow
Software Data Protection
Enable Flow
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data A0
to
address 5555
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 80
to
address 5555
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 20
to
address 5555
Software Data Protection
Disable Flow
Pause 10 mS
Exit
Sequentially load
up to 128 bytes
of page data
Pause 10 mS
Exit
(Optional page
load operation)
Notes for software program code:
Data Format: DQ7
-
DQ0 (Hex)
Address Format: A14
-
A0 (Hex)
W29EE011
Publication Release Date: February 19, 2002
- 7 - Revision A15
Command Codes for Software Chip Erase
BYTE SEQUENCE
ADDRESS
DATA
0 Write
5555H
AAH
1 Write
2AAAH
55H
2 Write
5555H
80H
3 Write
5555H
AAH
4 Write
2AAAH
55H
5 Write
5555H
10H
Software Chip Erase Acquisition Flow
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 80
to
address 5555
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 10
to
address 5555
Pause 50 mS
Exit
Notes for software chip erase:
Data Format: DQ7
-
DQ0 (Hex)
Address Format: A14
-
A0 (Hex)
W29EE011
- 8 -
Command Codes for Product Identification
BYTE SEQUENCE
SOFTWARE PRODUCT
IDENTIFICATION ENTRY
SOFTWARE PRODUCT
IDENTIFICATION EXIT
ADDRESS
DATA
ADDRESS
DATA
0 Write
5555H
AAH
5555H
AAH
1 Write
2AAAH
55H
2AAAH
55H
2 Write
5555H
80H
5555H
F0H
3 Write
5555H
AAH
-
-
4 Write
2AAAH
55H
-
-
5 Write
5555H
60H
-
-
Pause 10
S
Pause 10
S
Software Product Identification Acquisition Flow
Product Identification Entry(1)
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 80
to
address 5555
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 60
to
address 5555
Pause 10 S
Product Identification Mode(2, 3)
Read address = 0
data = DA
Read address = 1
data = C1
Product Identification Exit(1)
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data FO
to
address 5555
Pause 10
m
S
Normal Mode
(4)
Notes for software product identification:
(1) Data format: DQ7
-
DQ0 (Hex); address format: A14
-
A0 (Hex).
(2) A1
-
A16 = V
IL
; manufacture code is read for A0 = V
IL
; device code is read for A0 = V
IH
.
(3) The device does not remain in identification mode if power down.
(4) The device returns to standard operation mode.
W29EE011
Publication Release Date: February 19, 2002
- 9 - Revision A15
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to GND
Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
C
Storage Temperature
-65 to +150
C
D.C. Voltage on Any Pin to Ground Potential Except #OE
-0.5 to V
DD
+1.0
V
Transient Voltage (< 20 nS) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Voltage on #OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 5.0V
10%, GND = 0V, T
A
= 0 to 70
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP.
MAX.
Power Supply Current
I
CC
#CE = #OE = V
IL
, #WE = V
IH
,
all I/Os open
Address inputs = V
IL
/V
IH
,
at f = 5 MHz
-
-
50
mA
Standby V
DD
Current
(TTL input)
I
SB
1
#CE = V
IH
, all I/Os open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby V
DD
Current
(CMOS input)
I
SB
2 #CE = V
DD
-0.3V, all I/Os open
Other inputs = V
DD
-0.3V/GND
-
20
100
A
Input Leakage Current
I
LI
V
IN
= GND to V
DD
-
-
1
A
Output Leakage Current I
LO
V
IN
= GND to V
DD
-
-
10
A
Input Low Voltage
V
IL
-
-0.3
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
V
DD
+0.5
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage
V
OH
I
OH
= -0.4 mA
2.4
-
-
V
Power-up Timing
PARAMETER
SYMBOL
TYPICAL
UNIT
Power-up to Read Operation
T
PU
.READ
100
S
Power-up to Write Operation
T
PU
.WRITE
5
mS
W29EE011
- 10 -
CAPACITANCE
(V
DD
= 5.0V, T
A
= 25
C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
MAX.
UNIT
I/O Pin Capacitance
C
I/O
V
I/O
= 0V
12
pF
Input Capacitance
C
IN
V
IN
= 0V
6
pF
AC CHARACTERISTICS
AC Test Conditions
(V
DD
= 5V
10%)
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise/Fall Time
<
5 nS
Input/Output Timing Level
1.5V/1.5V
Output Load
1 TTL Gate and C
L
= 30 pF for 70 nS and 100 pF for others.
AC Test Load and Waveforms
+5V
1.8K ohm
D
OUT
1.3K ohm
100 pF for 90/120/150 nS
30 pF for 70 nS
(Including Jig and Scope)
Input
Test Point
0V
1.5V
3V
Test Point
1.5V
Output
W29EE011
Publication Release Date: February 19, 2002
- 11 - Revision A15
Read Cycle Timing Parameters
(V
DD
= 5.0V
10 %, V
DD
= 5.0
5 % for 70 nS, GND = 0V, T
A
= 0 to 70
C)
PARAMETER
SYMBOL
W29EE011-90
W29EE011-15
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
90
-
150
-
nS
Chip Enable Access Time
T
CE
-
90
-
150
nS
Address Access Time
T
AA
-
90
-
150
nS
Output Enable Access Time
T
OE
-
45
-
70
nS
#CE Low to Active Output
T
CLZ
0
-
0
-
nS
#OE Low to Active Output
T
OLZ
0
-
0
-
nS
#CE High to High-Z Output
T
CHZ
-
45
-
45
nS
#OE High to High-Z Output
T
OHZ
-
45
-
45
nS
Output Hold from Address Change
T
OH
0
-
0
-
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Write Cycle (Erase and Program)
T
WC
-
-
10
mS
Address Setup Time
T
AS
0
-
-
nS
Address Hold Time
T
AH
50
-
-
nS
#WE and #CE Setup Time
T
CS
0
-
-
nS
#WE and #CE Hold Time
T
CH
0
-
-
nS
#OE High Setup Time
T
OES
10
-
-
nS
#OE High Hold Time
T
OEH
10
-
-
nS
#CE Pulse Width
T
CP
70
-
-
nS
#WE Pulse Width
T
WP
70
-
-
nS
#WE High Width
T
WPH
150
-
-
nS
Data Setup Time
T
DS
50
-
-
nS
Data Hold Time
T
DH
10
-
-
nS
Byte Load Cycle Time
T
BLC
0.22
-
200
S
Byte Load Cycle Time-out
T
BLCO
300
-
-
S
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is V
IH
and (b) low level signal's reference level is V
IL
.
W29EE011
- 12 -
Data Polling and Toggle Bit Timing Parameters
PARAMETER
SYM.
W29EE011-90
W29EE011-15
UNIT
MIN.
MAX.
MIN.
MAX.
#OE to Data Polling Output Delay
T
OEP
-
45
-
70
nS
#CE to Data Polling Output Delay
T
CEP
-
90
-
150
nS
#OE to Toggle Bit Output Delay
T
OET
-
45
-
70
nS
#CE to Toggle Bit Output Delay
T
CET
-
90
-
150
nS
TIMING WAVEFORMS
Read Cycle Timing Diagram
Address A16-0
DQ7-0
Data Valid
Data Valid
High-Z
#CE
#OE
#WE
T
RC
V
IH
T
OLZ
T
CLZ
T
OE
T
CE
T
OH
T
AA
T
CHZ
T
OHZ
High-Z
W29EE011
Publication Release Date: February 19, 2002
- 13 - Revision A15
Timing Waveforms, continued
#WE Controlled Write Cycle Timing Diagram
Address A16-0
DQ7-0
Data Valid
Internal write starts
#CE
#OE
#WE
T
AS
T
CS
T
OES
T
AH
T
BLCO
T
WC
T
CH
T
OEH
T
WPH
T
WP
T
DS
T
DH
#CE Controlled Write Cycle Timing Diagram
High Z
Data Valid
Internal Write Starts
DQ7-0
T
AS
T
AH
T
BLCO
T
WC
T
CPH
T
OEH
T
DH
T
DS
T
CP
T
OES
Address A16-0
#CE
#OE
#WE
W29EE011
- 14 -
Timing Waveforms, continued
Page Write Cycle Timing Diagram
Address A16-0
Byte 0
Byte 1
Byte 2
Byte N-1
Byte N
Internal Write Start
DQ7-0
T
WC
T
BLCO
T
BLC
T
WPH
T
WP
#CE
#OE
#WE
#DATA Polling Timing Diagram
Address A16-0
DQ7-0
T
X
X
X
X
T
CEP
T
OEH
T
OEP
T
OES
WC
#CE
#OE
#WE
W29EE011
Publication Release Date: February 19, 2002
- 15 - Revision A15
Timing Waveforms, continued
Toggle Bit Timing Diagram
Address A16-0
DQ6
T
OEH
T
OES
T
WC
#CE
#OE
#WE
Page Write Timing Diagram Software Data Protection Mode
5555
5555
AA
55
A0
Three-byte sequence for
software data protection mode
Byte/page load
cycle starts
Internal write starts
Byte N
(last byte)
Byte 0
SW2
SW1
SW0
Address A16-0
DQ6
2AAA
T
WP
T
WPH
T
BLC
T
BLCO
Byte N-1
T
WC
#CE
#OE
#WE
W29EE011
- 16 -
Timing Waveforms, continued
Reset Software Data Protection Timing Diagram
SW2
SW1
SW0
Address A16-0
DQ7-0
SW3
SW4
SW5
Internal programming starts
Six-byte sequence for resetting
software data protection mode
T
WC
T
WP
T
WPH
T
BLC
T
BLCO
5555
2AAA
5555
5555
2AAA
5555
AA
55
80
AA
55
20
#CE
#OE
#WE
5 Volt-only Software Chip Erase Timing Diagram
SW2
SW1
SW0
Address A16-0
DQ7-0
SW3
SW4
SW5
Internal programming starts
Six-byte code for 5V-only software
chip erase
T
WC
T
WP
T
WPH
T
BLC
T
BLCO
5555
2AAA
5555
5555
2AAA
5555
AA
55
80
AA
55
10
#CE
#OE
#WE
W29EE011
Publication Release Date: February 19, 2002
- 17 - Revision A15
ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
POWER SUPPLY
CURRENT MAX.
(mA)
STANDBY V
DD
CURRENT MAX.
(
A)
PACKAGE
CYCLING HARDWARE
SID READ
FUNCTION
W29EE011-90
90
50
100
600 mil DIP
1K
Y
W29EE011-15
150
50
100
600 mil DIP
1K
Y
W29EE011T-90
90
50
100
TSOP (8 x 20 mm)
1K
Y
W29EE011T-15
150
50
100
TSOP (8 x 20 mm)
1K
Y
W29EE011Q-90
90
50
100
STSOP (8 x 14 mm)
1K
Y
W29EE011Q-15
150
50
100
STSOP (8 x 14 mm)
1K
Y
W29EE011P-90
90
50
100
32-pin PLCC
1K
Y
W29EE011P-15
150
50
100
32-pin PLCC
1K
Y
W29EE011-90B
90
50
100
600 mil DIP
10K
Y
W29EE011-15B
150
50
100
600 mil DIP
10K
Y
W29EE011T90B
90
50
100
TSOP (8x20mm)
10K
Y
W29EE011T15B
150
50
100
TSOP (8x20mm)
10K
Y
W29EE011Q90B
90
50
100
STSOP (8x14mm)
10K
Y
W29EE011Q15B
150
50
100
STSOP (8x14mm)
10K
Y
W29EE011P90B
90
50
100
32-pin PLCC
10K
Y
W29EE011P15B
150
50
100
32-pin PLCC
10K
Y
W29EE011-90N
90
50
100
600 mil DIP
1K
N
W29EE011-15N
150
50
100
600 mil DIP
1K
N
W29EE011P90N
90
50
100
32-pin PLCC
1K
N
W29EE011P15N
150
50
100
32-pin PLCC
1K
N
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
3. In Hardware SID Read column: Y = with SID read function; N = without SID read function.
W29EE011
Publication Release Date: February 19, 2002
- 18 - Revision A15
HOW TO READ THE TOP MARKING
Example: The top marking of 32L-PLCC W29EE011P15N
1
st
line: winbond logo
2
nd
line: the part number: W29EE011P15N
3
rd
line: the lot number
4
th
line: the tracking code: 149 O B RA
149: Packages made in '01, week 49
O: Assembly house ID: A means ASE, O means OSE, ...etc.
B: IC revision; A means version A, B means version B, ...etc.
RA: Process code
W29EE011P15N
2138977A-A12
149OBRA
W29EE011
Publication Release Date: February 19, 2002
- 19 - Revision A15
PACKAGE DIMENSIONS
32-pin P-DIP
1.Dimensions D Max. & S include mold flash or
tie bar burrs.
2.Dimension E1 does not include interlead flash.
3.Dimensions D & E1 include mold mismatch and
are determined at the mold parting line.
6.General appearance spec. should be based on
final visual inspection spec.
.
1.37
1.22
0.054
0.048
Notes:
Symbol
Min. Nom. Max.
Max.
Nom.
Min.
Dimension in inches
Dimension in mm
A
B
c
D
e
A
L
S
A
A
1
2
E
0.050
1.27
0.210
5.33
0.010
0.150
0.016
0.155
0.018
0.160
0.022
3.81
0.41
0.25
3.94
0.46
4.06
0.56
0.008
0.120
0.670
0.010
0.130
0.014
0.140
0.20
3.05
0.25
3.30
0.36
3.56
0.555
0.550
0.545
14.10
13.97
13.84
17.02
15.24
14.99
15.49
0.600
0.590
0.610
2.29
2.54
2.79
0.090
0.100
0.110
B
1
1
e
E
1
a
1.650
1.660
41.91
42.16
0
15
0.085
2.16
0.650
0.630
16.00
16.51
protrusion/intrusion.
4.Dimension B1 does not include dambar
5.Controlling dimension: Inches
15
0
Seating Plane
e
A
2
A
a
c
E
Base Plane
1
A
1
e
L
A
S
1
E
D
1
B
B
32
1
16
17
32-pin PLCC
Notes:
L
c
1
b
2
A
H
E
E
e
b
D H
D
y
A
A
1
Seating Plane
E
G
G
D
1
13
14
20
29
32
4
5
21
30
1. Dimensions D & E do not include interlead flash.
2. Dimension b1 does not include dambar protrusion/intrusion.
3. Controlling dimension: Inches
4. General appearance spec. should be based on final
visual inspection sepc.
Symbol
Min.
Nom.
Max.
Max.
Nom.
Min.
Dimension in Inches
Dimension in mm
A
b
c
D
e
H
E
L
y
A
A
1
2
E
b
1
G
D
3.56
0.50
2.80
2.67
2.93
0.71
0.66
0.81
0.41
0.46
0.56
0.20
0.25
0.35
13.89
13.97
14.05
11.35
11.43
11.51
1.27
H
D
G
E
12.45
12.9
5
13.46
9.91
10.41
10.92
14.86
14.99
15.11
12.32
12.45
12.57
1.91
2.29
0.004
0.095
0.090
0.075
0.495
0.49
0
0.485
0.595
0.590
0.585
0.430
0.410
0.390
0.530
0.51
0
0.490
0.050
0.453
0.450
0.447
0.553
0.550
0.547
0.014
0.010
0.008
0.022
0.018
0.016
0.032
0.026
0.028
0.115
0.105
0.110
0.020
0.140
1.12
1.42
0.044
0.056
0
10
10
0
0.10
2.41
W29EE011
- 20 -
Package Dimensions, continued
32-pin TSOP (8 x 20 mm)
A
A
A
2
1
L
L
1
Y
c
E
H
D
D
b
e
M
0.10(0.004)
Min.
Nom.
Max.
Min.
Nom.
Max.
Symbol
A
A
b
c
D
E
e
L
L
Y
1
1
2
A
H
D
Note:
Controlling dimension: Millimeters
Dimension in Inches
0.047
0.006
0.041
0.039
0.037
0.007
0.008
0.009
0.005
0.006
0.007
0.720
0.724
0.728
0.311
0.315
0.319
0.780
0.787
0.795
0.020
0.016
0.020
0.024
0.031
0.000
0.004
1
3
5
0.002
1.20
0.05
0.15
1.05
1.00
0.95
0.17
0.12
18.30
7.90
19.80
0.40
0.00
1
0.20
0.23
0.15
0.17
18.40
18.50
8.00
8.10
20.00
20.20
0.50
0.50
0.60
0.80
0.10
3
5
Dimension in mm
__
__
__
__
__
__
__
__
__
__
__
__
__
__
__
__
32-pin STSOP (8 x 14 mm)
A
A
A
2
1
L
L
1
Y
E
H
D
D
c
Min.
Dimension in Inches
Nom.
Max.
Min.
Nom. Max.
Symbol
1.20
0.05
0.15
1.05
1.00
0.95
0.17
0.10
0.50
0.00
0
0.22
0.27
-----
0.21
12.40
8.00
14.00
0.50
0.60
0.70
0.80
0.10
3
5
0.047
0.006
0.041
0.040
0.035
0.007
0.009
0.010
0.004
-----
0.008
0.488
0.315
0.551
0.020
0.020
0.024
0.028
0.031
0.000
0.004
0
3
5
0.002
A
A
b
c
D
E
e
L
L
Y
1
1
2
A
H
D
Dimension in mm
c
b
e
W29EE011
Publication Release Date: February 19, 2002
- 21 - Revision A15
VERSION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A9
Feb. 1998
6
Add pause 10 mS
7
Add pause 50 mS
8
Correct the time 10 mS to 10
S
1, 17
Add cycing 100 item
A10
Jun. 1998
1, 10, 11, 12, 17 Add 70 nS bining
A11
Aug. 1998
1, 2, 17, 19
Add TSOP package
A12
Jul. 1999
1, 17
Change endurance cycles as 1K/10K
1, 11, 12, 17
Delete 70, 120 nS bining
1, 17, 18
Delete SOP package
A13
Dec. 2000
4, 17
Add in Hardware SID Read Function note
A14
Mar. 2001
1, 17, 18
Add in TSOP (8 x 14 mm) package
17
Correct Part No. in Ordering Information
A15
Feb. 19, 2002
4
Modify V
DD
Power Up/Down Detection in Hardware
Data Protection
18
Add HOW TO READ THE TOP MARKING
1, 17, 20
Rename TSOP (8 x 14 mm) as STSOP (8 X 14 mm)
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
Taipei Office
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
Winbond Electronics (H.K.) Ltd.
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
FAX: 852-27552064
Unit 9-15, 22F, Millennium City,
TEL: 852-27513100
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
Winbond Electronics (Shanghai) Ltd.
200336 China
FAX: 86-21-62365998
27F, 2299 Yan An W. Rd. Shanghai,
TEL: 86-21-62365999
Winbond Electronics Corporation Japan
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
FAX: 81-45-4781800
7F Daini-ueno BLDG, 3-7-18
TEL: 81-45-4781881
9F, No.480, Rueiguang Rd.,
Neihu Chiu, Taipei, 114,
Taiwan, R.O.C.