Preliminary W49F201
128K
16 CMOS FLASH MEMORY
Publication Release Date: June 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K
16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W49F201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
-
5-volt Read/Erase/Program
Fast Program operation:
-
Word-by-Word programming: 50
S (max.)
Fast Erase operation: 60 mS (typ.)
Fast Read access time: 45/55 nS
Endurance: 1K/10K cycles (typ.)
Ten-year data retention
Hardware data protection
Sector configuration
-
One 8K words boot block with lockout
protection
-
Two 8K words parameter blocks
-
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
-
Active current: 25 mA (typ.)
-
Standby current: 20
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
-
Toggle bit
-
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
Preliminary W49F201
- 2 -
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
DQ15
A9
A10
A11
A12
A13
A14
A15
OE
GND
48-pin
TSOP
24
23
NC
A16
WE
CE
A7
A6
A5
A4
A3
A2
A1
A0
21
22
48
47
7
46
45
44
43
42
41
NC
NC
NC
NC
RESET
NC
NC
A8
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
V
CC
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
GND
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DQ15
GND
OE
44-pin
SOP
24
23
A16
CE
A0
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
44
43
42
41
NC
A7
A6
A5
A4
A3
A2
A1
NC
NC
A9
A10
A11
A12
A13
A14
A15
WE
RESET
A8
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
V
CC
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
GND
NC
26
25
BLOCK DIAGRAM
CONTROL
OUTPUT
BUFFER
DECODER
MAIN MEMORY
104K WORDS
CE
OE
WE
A0
.
.
A16
.
.
DQ0
DQ15
V
DD
V
SS
BOOT BLOCK
8K WORDS
PARAMETER
BLOCK2
8K WORDS
PARAMETER
BLOCK1
8K WORDS
1FFFF
06000
05FFF
04000
03FFF
02000
01FFF
00000
RESET
PIN DESCRIPTION
SYMBOL
PIN NAME
RESET
Reset
A0
-
A16
Address Inputs
DQ0
-
DQ15
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
V
DD
Power Supply
GND
Ground
NC
No Connection
Preliminary W49F201
Publication Release Date: June 1999
- 3 -
Revision A1
FUNCTIONAL DESCRIPTION
Read Mode
The read operation of the W49F201 is controlled by CE and OE, both of which have to be low for
the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip
is de-selected and only standby power will be consumed. OE is the output control and is used to gate
data to the output pins. The data bus is in high impedance state when either CE or OE is high. Refer
to the timing waveforms for further details.
Reset Operation
The RESET
input pin can be used in some application. When RESET pin is at high state, the device
is in normal operation mode. When RESET pin is driven low for at least a period of T
RP
, it will halts
the device and all outputs are at high impedance state. The device also resets the internal state
machine to read array data. The operation that was interrupted should be reinitiated once the device
is ready to accept another command sequence to assure data integrity. As the high state re-asserted
to the RESET pin, the device will return to read or standby mode, it depends on the control signals.
The system can read data T
RH
after the RESET
pin returns to V
IH
. The other function for RESET pin
is temporary reset the boot block. By applying the 12V to RESET pin, the boot block can be
reprogrammed even though the boot block lockout function is enabled.
Boot Block Operation
There is one 8K-word boot block in this device, which can be used to store boot code. It is located in
the first 8K words of the memory with the address range from 0000(hex) to 1FFF(hex).
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set
the data for the designated block cannot be erased or programmed (programming lockout); other
memory locations can be changed by the regular programming method.
There is one condition that the lockout feature can be overrides. Just apply 12V to RESET
pin, the
lockout feature will temporary be inactivated and the boot block can be erased/programmed. Once
the RESET pin returns to TTL level, the lockout feature will be activated again.
In order to detect whether the boot block feature is set on the 8K-words block, users can perform
software command sequence: enter the product identification mode (see Command Codes for
Identification/Boot Block Lockout Detection for specific code), and then read from address "0002
hex". If the output data in DQ0 is "1", the boot block programming lockout feature is activated; if the
output data in DQ0 is "0", the lockout feature is inactivated and the block can be
erased/programmed.
To return to normal operation, perform a three-byte command sequence (or an alternate single-word
command) to exit the identification mode. For the specific code, see Command Codes for
Identification/Boot Block Lockout Detection.
Chip Erase Operation
The chip-erase mode can be initiated by a six-word command sequence. After the command loading
cycle, the device enters the internal chip erase mode, which is automatically timed and will be
Preliminary W49F201
- 4 -
completed in a fast 100 mS (typical). The host system is not required to provide any control or timing
during this operation. The entire memory array will be erased to FF(hex). by the chip erase operation
if the boot block programming lockout feature is not activated. Once the boot block lockout feature is
activated, the chip erase function will erase all the sectors except the boot mode.
Sector Erase Operation
The three sectors, main memory and two parameters blocks, can be erased individually by initiating a
six-word command sequence. Sector address is latched on the falling WE edge of the sixth cycle
while the 30(hex) data input command is latched at the rising edge of WE. After the command
loading cycle, the device enters the internal sector erase mode, which is automatically timed and will
be completed in a fast 100 mS (typical). The host system is not required to provide any control or
timing during this operation. The device will automatically return to normal read mode after the erase
operation completed. Data polling and/or Toggle Bits can be used to detect end of erase cycle.
When the boot block lockout feature is inactivated, the boot block and the main memory block will be
erased together. Once the boot block is locked, only the main memory block will be erased by the
execution of sector erase operation.
Program Operation
The W49F201 is programmed on a word-by-word basis. Program operation can only change logical
data "1" to logical data "0" The erase operation (changed entire data in main memory and/or boot
block from "0" to "1" is needed before programming.
The program operation is initiated by a 4-word command cycle (see Command Codes for Word
Programming). The device will internally enter the program operation immediately after the word-
program command is entered. The internal program timer will automatically time-out (50
S max. -
T
BP
) once completed and return to normal read mode. Data polling and/or Toggle Bits can be used to
detect end of program cycle.
Hardware Data Protection
The integrity of the data stored in the W49F201 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The programming operation is inhibited when V
DD
is less than
2.5V typical.
(3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) V
DD
power-on delay: When V
DD
has reached its sense level, the device will automatically time-out
5 mS before any write (erase/program) operation.
Data Polling (DQ
7
)- Write Status Detection
The W49F201 includes a data polling feature to indicate the end of a program or erase cycle. When
the W49F201 is in the internal program or erase cycle, any attempt to read DQ
7
of the last word
loaded will receive the complement of the true data. Once the program or erase cycle is completed,
DQ
7
will show the true data. Note that DQ
7
will show logical "0" during the erase cycle, and become
logical "1" or true data when the erase cycle has been completed.
Preliminary W49F201
Publication Release Date: June 1999
- 5 -
Revision A1
Toggle Bit (DQ
6
)- Write Status Detection
In addition to data polling, the W49F201 provides another method for determining the end of a
program cycle. During the internal program or erase cycle, any consecutive attempts to read DQ
6
will
produce alternating 0's and 1's. When the program or erase cycle is completed, this toggling between
0's and 1's will stop. The device is then ready for the next operation.
Product Identification
The product ID operation outputs the manufacturer code and device code. Programming equipment
automatically matches the device with its proper erase and programming algorithms.
The manufacturer and device codes can be accessed by software or hardware operation. In the
software access mode, a six-word (or JEDEC 3-word) command sequence can be used to access the
product ID. A read from address 0000H outputs the manufacturer code, 00DA(hex). A read from
address 0001(hex) outputs the device code, 00AE(hex). The product ID operation can be terminated
by a three-word command sequence or an alternative one-word command sequence (see Command
Definition table).
In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE
high, and raising A9 to 12 volts.
TABLE OF OPERATING MODES
Operating Mode Selection
(V
HH
= 12V
5
%
)
MODE
PINS
CE
OE
WE
RESET
ADDRESS
DQ.
Read
V
IL
V
IL
V
IH
V
IH
A
IN
Dout
Erase/Program
V
IL
V
IH
V
IL
V
IH
A
IN
Din
Standby
V
IH
X
X
V
IH
X
High Z
Erase/Program
X
V
IL
X
V
IH
X
High Z/D
OUT
Inhibit
X
X
V
IH
V
IH
X
High Z/D
OUT
Output Disable
X
V
IH
X
V
IH
X
High Z
Product ID
V
IL
V
IL
V
IH
V
IH
A0 = V
IL
;
A1
-
A15 = V
IL
; A9 = V
HH
Manufacturer Code
00DA (Hex)
V
IL
V
IL
V
IH
V
IH
A0 = V
IH
;
A1
-
A15 = V
IL
; A9 = V
HH
Device Code
00AE (Hex)
Reset
X
X
X
V
IL
X
High Z
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