W964B6BBN
1M WORD
16 BIT LOW POWER PSEUDO SRAM
Publication Release Date: March 31, 2003
- 1 -
Revision A1
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 3
2. FEATURES ......................................................................................................................................... 3
3. PRODUCT OPTIONS ......................................................................................................................... 3
5. Ball DESCRIPTION............................................................................................................................. 4
6. BLOCK DIAGRAM .............................................................................................................................. 5
7. FUNCTION TRUTH TABLE ................................................................................................................ 6
8. ELECTRICAL CHARACTERISTICS ................................................................................................... 7
Absolute Maximum Ratings .............................................................................................................. 7
Recommended Operation Conditions............................................................................................... 7
Capacitance ...................................................................................................................................... 8
DC Characteristics ............................................................................................................................ 8
AC Characteristics ............................................................................................................................ 9
Read Operation ..........................................................................................................................................9
Write Operation.........................................................................................................................................11
Power Down and Power Down Program Parameters ...............................................................................13
Other Timing Parameters .........................................................................................................................13
AC Test Conditions...................................................................................................................................13
9. TIMING WAVEFORMS ..................................................................................................................... 14
Read Timing #1 (
OE
Control Access)............................................................................................ 14
Read Timing #2 (
CE1
Control Access) .......................................................................................... 15
Read Timing #2 (
CE1
Control Access) .......................................................................................... 16
Read Timing #3 (Address Access after
OE
Control Access) ........................................................ 17
Read Timing #4 (Address Access after
CE1
Control Access)....................................................... 18
Write Timing #1 (
CE1
Control) ....................................................................................................... 19
Write Timing #2-1 ( WE Control, Single Write Operation) .............................................................. 20
Write Timing #2 ( WE
Control, Continuous Write Operation) ......................................................... 21
Read/Write Timing #1-1 (
CE1
Control)........................................................................................... 22
Read/Write Timing #1-2 (
CE1
Control)........................................................................................... 23
W964B6BBN
- 2 -
Read ( OE Control) / Write ( WE Control) Timing #2-1 .................................................................. 24
Read ( OE Control) / Write ( WE Control) Timing #2-2 .................................................................. 25
Power Down Program Timing ......................................................................................................... 26
Power Down Entry and Exit Timing................................................................................................. 26
Power-up Timing #1 ........................................................................................................................ 26
Power-up Timing #2 ........................................................................................................................ 27
Standby Entry Timing after Read or Write ...................................................................................... 27
10. PACKAGE DIMENSION.................................................................................................................. 28
TFBGA 48 Balls (6 x 8 mm^2, pitch 0.75 mm)................................................................................ 28
11. ORDERING INFORMATION........................................................................................................... 29
12. VERSION HISTORY ....................................................................................................................... 30
W964B6BBN
1. GENERAL DESCRIPTION
W964B6BBN is a 16M bits CMOS pseudo static random access memory (Pseudo SRAM), organized
as 1M words x 16 bits. Using advanced single transistor DRAM architecture and 0.175
m process
technology; W964B6BBN delivers fast access cycle time and low power consumption. It is suitable for
mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and
power dissipation is most concerned
2. FEATURES
Asynchronous SRAM interface
Fast access cycle time:
- t
RC
= 70 nS (-70), 80 nS (-80)
Low power consumption:
- I
DDA1
= 20 mA Max.
- I
DDS1
= 70
A Max.
Byte write control
Wide operating conditions:
- V
DD
= +2.3V to +2.7V
Temperature
- T
A
= 0C to +70C
- T
A
= -25C to +85C (Extended temperature)
- T
A
= -40C to +85C (Industrial temperature)
3. PRODUCT OPTIONS
PARAMETER W964B6BBN70 W964B6BBN80
t
RC
70 nS Min.
80 nS Min.
I
DDS1
70
A Max.
70
A Max.
I
DDA1
20 mA
20 mA
V
DD
2.3V to 2.7V
2.3V to 2.7V
Publication Release Date: March 31, 2003
- 3 -
Revision A1
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