W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 1 -
Features
3.3V
0.3V power supply
Up to 166 MHz clock frequency
1,048,576 words x 4 banks x 16 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8 , and full page
Burst read, Single Writes Mode
Byte data controlled by UDQM and LDQM
Power-Down Mode
Auto-Precharge and controlled precharge
4k refresh cycles / 64ms
Interface: LVTTL
Package: TSOP II 54 pin, 400 mil - 0.80
General Description
W986416CH is a high speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x
16 bits. Using pipelined architecture and 0.20um process technology, W986416CH delivers a data bandwidth of up to 332M
bytes per second (-6). For different application, W986416CH is sorted into four speed grades: -6, -7, -75 and -8H. The -6 parts
can run up to 166Mhz/CL3. The -7 parts can run up to 143Mhz/CL3 specification. The -75 parts can run up to PC133/CL3
specification. The -8H parts can run up to 125Mhz/CL3 or PC100/CL2 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst
to maximize its performance. W986416CH is ideal for main memory in high performance applications.
Key Parameters
Symbol
Description
min/max
-6
-7
-75(PC133) -8H(PC100)
t
CK
Clock Cycle Time
min
6ns
7ns
7.5ns
8ns
t
AC
Access Time from CLK
max
5ns
5.4ns
5.4ns
6ns
t
RP
Precharge to Active Command
min
18ns
20ns
20ns
20ns
t
RCD
Active to Read/Write Command
min
18ns
20ns
20ns
20ns
I
CC1
Operation Current ( Single bank )
max
80mA
65mA
65mA
60mA
I
CC4
Burst Operation Current
max
130mA
115mA
115mA
110mA
I
CC6
Self-Refresh Current
max
1mA
1mA
1mA
1mA
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 2 -
DQ0
DQ15
UDQM
LDQM
CLK
CKE
CS
RAS
CAS
WE
A10
A0
A9
A11
BS0
BS1
CLOCK
BUFFER
COMMAND
DECODER
ADDRESS
BUFFER
REFRESH
COUNTER
COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #2
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #0
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #3
DATA CONTROL
CIRCUIT
DQ
BUFFER
BLOCK DIAGRAM
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #1
NOTE:
The cell array configuration is 4096 * 256 * 16.
DMn
ROW DECODER
ROW DECODER
ROW DECODER
ROW DECODER
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 3 -
Pin Assignment
Pin Number
Pin Name
Function
Description
23 ~ 26, 22,
29 ~35
A0~ A11
Address
Multiplexed pins for row and column address.
Row address: A0 ~ A11. Column address: A0 ~ A7.
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time, or bank to
read/write during address latch time.
2, 4, 5, 7, 8,
10, 11, 13,
42, 44, 45,
47, 48, 50,
51, 53
DQ0 ~
DQ15
Data Input/
Output
Multiplexed pins for data output and input.
19
CS#
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
18
RAS#
Row Address
Strobe
Command input. When sampled at the rising edge of the clock,
RAS#, CAS# and WE# define the operation to be executed.
17
CAS#
Column
Address Strobe
Referred to RAS#
16
WE#
Write Enable
Referred to RAS#
39, 15
UDQM/
LDQM
input/output
mask
The output buffer is placed at Hi-Z (with latency of 2) when DQM
is sampled high in read cycle. In write cycle, sampling DQM
high will block the write operation with zero latency.
38
CLK
Clock Inputs
System clock used to sample inputs on the rising edge of clock.
37
CKE
Clock Enable
CKE controls the clock activation and deactivation. When CKE
is low, Power Down mode, Suspend mode, or Self Refresh
mode is entered.
1, 14, 27
V
CC
Power ( +3.3 V )
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
V
SS
Ground
Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49
V
CC
Q
Power ( + 3.3 V
) for I/O buffer
Separated power from V
CC
, used for output buffers to improve
noise.
6, 12, 46, 52
V
SS
Q
Ground for I/O
buffer
Separated ground from V
SS
, used for output buffers to improve
noise.
36, 40
NC
No Connection
No connection
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 4 -
Pin Assignment (Top View)
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
LDQM
CAS
RAS
CS
BS0
BS1
A10/AP
A0
A1
A2
A3
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
CC
V
CC
Q
V
CC
Q
V
SS
Q
V
SS
Q
V
CC
V
CC
V
SS
V
SS
Q
V
CC
Q
V
SS
Q
V
CC
Q
V
SS
V
SS
WE
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 5 -
ABSOLUTE MAXIMUM RATINGS
SYMBOL
ITEM
RATING
UNIT
NOTES
V
IN
,V
OUT
Input, Output Voltage
-0.3~V
CC
+0.3
V
1
V
CC
,V
CC
Q
Power Supply Voltage
-0.3~4.6
V
1
T
OPR
Operating Temperature
0~70
C
1
T
STG
Storage Temperature
-55~150
C
1
T
SOLDER
Soldering Temperature(10s)
260
C
1
P
D
Power Dissipation
1
W
1
I
OUT
Short Circuit Output Current
50
mA
1
RECOMMENDED DC OPERATING CONDITIONS ( Ta = 0 to 70
C
)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
NOTES
V
CC
Power Supply Voltage
3.0
3.3
3.6
V
2
V
CC
Q
Power Supply Voltage (for I/O Buffer)
3.0
3.3
3.6
V
2
V
IH
Input High Voltage
2.0
-
V
CC
+0.3
V
2
V
IL
Input Low Voltage
-0.3
-
0.8
V
2
Note:
V
IH
(max) = V
CC
/V
CC
Q+1.2V for pulse width < 5ns
V
IL
(min) = V
SS
/V
SS
Q-1.2V for pulse width < 5ns
CAPACITANCE (V
CC
=3.3V, Af = 1MHz, Ta=25
C)
SYMBOL
PARAMETER
MIN
MAX
UNIT
Input Capacitance (A0 to A11, BS0 ,BS1, CS, RAS, CAS, WE, DQM, CKE)
-
4
pf
C
I
Input Capacitance (CLK)
-
4
pf
C
O
Input/Output capacitance
-
6.5
pf
Note: These parameters are periodically sampled and not 100% tested.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 6 -
AC CHARACTERISTICS AND OPERATING CONDITION
(Vcc=3.3V
0.3V, Ta=0
to 70
C Notes:5, 6, 7, 8)
-6
-7
-75(PC133)
-8H(PC100)
UNIT
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
t
RC
Ref/Active to Ref/Active Command Period
60
63
65
68
t
RAS
Active to precharge Command Period
42
10000
42
10000
45
10000
48
10000
Ns
t
RCD
Active to Read/Write Command Delay Time
18
20
20
20
t
CCD
Read/Write(a) to Read/Write(b)Command
1
1
1
1
Cycle
t
RP
Precharge to Active Command Period
18
20
20
20
t
RRD
Active(a) to Active(b) Command Period
12
14
15
20
t
WR
Write Recovery Time
CL*=2
10
10
10
10
CL*=3
6
7
7.5
8
t
CK
CLK Cycle Time
CL*=2
10
1000
10
1000
10
1000
10
1000
CL*=3
6
1000
7
1000
7.5
1000
8
1000
t
CH
CLK High Level width
2.5
2.5
2.5
3
t
CL
CLK Low Level width
2.5
2.5
2.5
3
t
AC
Access Time from CLK
CL*=2
6
6
6
6
CL*=3
5
5.4
5.4
6
ns
t
OH
Output Data Hold Time
2
2.5
2.7
3
t
HZ
Output Data High Impedance Time
2
6
2.5
7
2.7
7.5
3
8
t
LZ
Output Data Low Impedance Time
0
0
0
0
t
SB
Power Down Mode Entry Time
0
6
0
7
0
7.5
0
8
t
T
Transition Time of CLK (Rise and Fall)
0.3
10
0.3
10
0.3
10
0.5
10
t
DS
Data-in Set-up Time
1.5
1.5
1.5
2
t
DH
Data-in Hold Time
0.8
0.8
0.8
1
t
AS
Address Set-up Time
1.5
1.5
1.5
2
t
AH
Address Hold Time
0.8
0.8
0.8
1
t
CKS
CKE Set-up Time
1.5
1.5
1.5
2
t
CKH
CKE Hold Time
0.8
0.8
0.8
1
t
CMS
Command Set-up Time
1.5
1.5
1.5
2
t
CMH
Command Hold Time
0.8
0.8
0.8
1
t
REF
Refresh Time
64
64
64
64
ms
t
RSC
Mode register Set Cycle Time
12
14
15
16
ns
* CL=CAS Latency
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 7 -
DC CHARACTERISTICS (V
CC
= 3.3V
0.3V, Ta=0
~70
C)
-6
-7/-75(PC133) -8H(PC100)
ITEMS
SYMBOL
MAX.
MAX.
MAX.
UNIT NOTES
OPERATING CURRENT
t
CK
=min , t
RC
=min
Active Precharge command cycling
without Burst operation
1 bank operation
I
CC1
80
65
60
3
STANDBY CURRENT
t
CK
=min , CS#=V
IH
CKE = V
IH
I
CC2
60
45
40
3
V
IH/L
=V
IH(min)
/V
IL(max)
Bank : inactive state
CKE = V
IL
(Power Down mode)
I
CC2P
1
1
1
3
STANDBY CURRENT
CLK=V
IL
, CS#=V
IH
CKE = V
IH
I
CC2S
7
6
6
V
IH/L
=V
IH
(min)/V
IL
(max)
BANK : inactive state
CKE = V
IL
(Power Down mode)
I
CC2PS
1
1
1
CKE = V
IH
I
CC3
65
50
45
NO OPERATING CURRENT
t
CK
=min
CS#=V
IH
(min)
BANK : active state (4 banks)
CKE=
V
IL
(Power Down mode)
I
CC3P
3
3
3
BURST OPERATING CURRENT
t
CK
= min
Read / Write command cycling
I
CC4
130
115
110
3.4
AUTO REFRESH CURRENT
t
CK
= min
Auto Refresh command cycling
I
CC5
155
110
100
3
SELF REFRESH CURRENT
Self Refresh mode
CKE = 0.2V
I
CC6
1
1
1
mA
ITEM
SYMBOL
MIN.
MAX.
UNIT
NOTES
INPUT LEAKAGE CURRENT
( 0V
V
IN
V
CC
, all other pins not under test = 0V )
I
I(L)
-5
5
A
OUTPUT LEAKAGE CURRENT
( Output disable , 0V
V
OUT
V
CCQ
)
I
O(L)
-5
5
A
LVTTL OUTPUT
H
LEVEL VOLTAGE
( I
OUT
= -2mA )
V
OH
2.4
-
V
LVTTL OUTPUT
L
LEVEL VOLTAGE
( I
OUT
= 2mA )
V
OL
-
0.4
V
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 8 -
NOTES:
1.
Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2.
All voltages are referenced to V
SS
3.
These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of
t
CK
and t
RC
.
4.
These parameters depend on the output loading conditions. Specified values are obtained with output open. The
W986416CH-6/-7/-75/-8H is tested with 50pF output load.
5.
Power up sequence is further described in the "Functional Description" section.
6.
AC TESTING CONDITIONS
Output Reference Level
1.4V/1.4V
Output Load
The W986416CH-6/-7/-75/-8H is tested with
50pF output load. (See diagram below)
Input Signal Levels
2.4V/0.4V
Transition Time (Rise and Fall) of Input Signal
2ns
Input Reference Level
1.4V
50 ohms
1.4 V
AC TEST LOAD
Z = 50 ohms
output
50pF
7 Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 9 -
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth
table for the operation commands.
Table 1 Truth Table ( note (1) , (2) )
command
Device state
CKEn-1
CKEn
DQM
BS0,1
A10
A11,
A9-0
CS
RAS
CAS
WE
Bank Active
Idle
H
x
x
v
v
v
L
L
H
H
Bank Precharge
Any
H
x
x
v
L
x
L
L
H
L
Precharge All
Any
H
x
x
x
H
x
L
L
H
L
Write
Active (3)
H
x
x
v
L
v
L
H
L
L
Write with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
L
Read
Active (3)
H
x
x
v
L
v
L
H
L
H
Read with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
H
Mode Register Set
Idle
H
x
x
v
v
v
L
L
L
L
No - Operation
Any
H
x
x
x
x
x
L
H
H
H
Burst Stop
Active (4)
H
x
x
x
x
x
L
H
H
L
Device Deselect
Any
H
x
x
x
x
x
H
x
x
x
Auto - Refresh
Idle
H
H
x
x
x
x
L
L
L
H
Self - Refresh Entry
Idle
H
L
x
x
x
x
L
L
L
H
Self Refresh Exit
idle
(S.R.)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock suspend Mode Entry
Active
H
L
x
x
x
x
x
x
x
x
Power Down Mode Entry
Idle
Active (5)
H
H
L
L
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock Suspend Mode Exit
Active
L
H
x
x
x
x
x
x
x
x
Power Down Mode Exit
Any
(power down)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Data write/Output Enable
Active
H
x
L
x
x
x
x
x
x
x
Data Write/Output Disable
Active
H
x
H
x
x
x
x
x
x
x
Notes: (1) v= valid x = Don't care L= Low Level H= High Level
(2) CKEn signal is input level when commands are provided.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 10 -
Functional Description
Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and initialization sequence need to be
followed to guarantee the device being preconditioned to each user specific needs.
During power up, all V
CC
and V
CC
Q pins must be ramp up simultaneously to the specified voltage when the input signals are held
in the "NOP" state. The power up voltage must not exceed V
CC
+0.3V on any of the input pins or V
CC
supplies. After power up,
an initial pause of 200us is required followed by a precharge of all banks using the precharge command. To prevent data
contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause
period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register.
An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure
proper subsequent operation.
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a
precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode
Register Set Command is activated by the low signals of RAS, CAS, CS and WE at the positive edge of the clock. The address
input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command
may be issued following the mode register set command once a delay equal to t
RSC
has elapsed. Please refer to the next page for
Mode Register Set Cycle and Operation Table.
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to
RAS# activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write
operation can begin must not be less than the RAS to CAS delay time (t
RCD
). Once a bank has been activated it must be
precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between
successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (t
RC
). The minimum
time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time
(t
RRD
). The maximum time that each bank can be held active is specified as t
RAS
(max).
Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low
at the clock rising edge after minimum of t
RCD
delay. WE pin voltage level defines whether the access cycle is a read operation
(WE high), or a write operation (WE low). The address inputs determine the starting column address.
Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate
command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using
the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access
operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or
between active banks on every clock cycle.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 11 -
Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst
(sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the
next page explain the address sequence of interleave mode and sequence mode.
Burst Command
The Burst Write command is initiated by applying logic low level to CS, CAS and WE while holding RAS high at the rising
edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied
on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each
subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be
ignored.
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses
are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on
the outputs until the CAS latency from the interrupting Read Command the is satisfied.
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance
state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the
write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the
DQ bus and DQM masking is no longer needed.
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is
interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the
programmed burst length is satisfied.
Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs
must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention.
When the Read Command is activated, any residual data from the burst write cycle will be ignored.
Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write
Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other
burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the
rising edge of the clock. The data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst
read cycle interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write operation, then any
residual data from the burst write cycle will be ignored.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 12 -
Table 2 Address Sequence of Sequential Mode
DATA
Access Address
Burst Length
Data 0
n
BL= 2 (disturb address is A0)
Data 1
n + 1
No address carry from A0 to A1
Data 2
n + 2
BL= 4 (disturb addresses are A0 and A1)
Data 3
n + 3
No address carry from A1 to A2
Data 4
n + 4
Data 5
n + 5
BL= 8 (disturb addresses are A0, A1 and A2)
Data 6
n + 6
No address carry from A2 to A3
Data 7
n + 7
.
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the
device. The disturb address is varied by the Burst Length as shown in Table 2.
.
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the
sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Access Address
Burst Length
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 2
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 4
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 8
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 13 -
Auto-Precharge Command
If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is entered. During auto-
precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically
before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the
end of the scheduled burst cycle. The number of clocks is determined by CAS latency.
A Read or Write Command with auto-precharge can not be interrupted before the entire burst operation is completed. Therefore,
use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with auto-precharge. Once the precharge
operation has started, the bank cannot be reactivated until the Precharge time (t
RP
) has been satisfied. Issue of Auto-Precharge
command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-
Precharge function is initiated. The SDRAM automatically enters the precharge operation one clock delay from the last burst
write cycle. This delay is referred to as Write t
DPL
. The bank undergoing auto-precharge can not be reactivated until t
DPL
and t
RP
are
satisfied. This is referred to as t
DAL
, Data-in to Active delay (t
DAL
= t
DPL
+ t
RP
). When using the Auto-precharge Command, the
interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy t
RAS
(min).
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when
CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge
each bank separately or all banks simultaneously. Three address bits, A10, A12, and A13, are used to define which bank(s) is to
be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated
before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must
be greater than or equal to the Precharge time (t
RP
).
Self Refresh Command
The Self Refresh Command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock.
All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE must be held low to
keep the device in Self Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except
CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self
Refresh operation after CKE is returned high. A minimum delay time is required when the device exits Self Refresh Operation
and before the next command can be issued. This delay is equal to the t
AC
cycle time plus the Self Refresh exit time.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly distributed), a burst of
4,096 AUTO REFRESH cycles should be completed just prior to entering and just after exiting the self refresh mode.
Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the
power. The Power Down mode does not perform any refresh operations, therefore the device can not remain in Power Down
mode longer than the Refresh period (t
REF
) of the device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next
rising clock edge, depending on t
CK
. The input buffers need to be enabled with CKE held high for a period equal to t
CES
(min) +
t
CK
(min).
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 14 -
No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to prevent the SDRAM from
registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS,
CAS, and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought
high, the RAS, CAS, and WE signals become don't cares.
Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the
banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any
clocked operation that was currently being executed. There is a one clock delay between the registration of CKE low and the
time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay from when CKE returns high
to when Clock Suspend mode is exited.
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 15 -
Timing Waveform
t
CK
CLK
A0-A11
BS0, 1
V
IH
V
IL
t
CMH
t
CMS
t
CH
t
CL
t
T
t
T
t
CKS
t
CKH
t
CKH
t
CKS
t
CKS
t
CKH
Command Input Timing
CS
RAS
CAS
WE
CKE
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 16 -
Read Timing
Read CAS Latency
t
AC
t
LZ
t
AC
t
OH
t
HZ
t
OH
Burst Length
Read Command
CLK
CS
RAS
CAS
WE
A0-A11
BS0, 1
DQ
Valid
Data-Out
Valid
Data-Out
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 17 -
t
CMH
t
CMS
t
CMH
t
CMS
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
CKH
t
CKS
t
CKH
t
CKS
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
CMH
t
CMS
t
CMH
t
CMS
t
OH
t
AC
t
OH
t
AC
t
OH
t
HZ
t
LZ
t
AC
t
OH
t
AC
t
CKH
t
CKS
t
CKH
t
CKS
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
CLK
DQM
DQ0 -15
(Word Mask)
(Clock Mask)
CLK
CKE
DQ0 -15
CLK
Control Timing of Input Data
Control Timing of Output Data
(Output Enable)
(Clock Mask)
DQM
DQ0 -15
CKE
CLK
DQ0 -15
OPEN
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 18 -
Mode Register Set Cycle
A0
A1
A2
A3
A4
A5
A6
Burst Length
Addressing Mode
CAS Latency
(Test Mode)
A8
Reserved
A0
A7
A0
A9
A0
Write Mode
A10
BS0
A0
A11
A0
BS1
"0"
"0"
A0
A3
A0
Addressing Mode
A0
0
A0
Sequential
A0
1
A0
Interleave
A0
A9
Single Write Mode
A0
0
A0
Burst read and Burst write
A0
1
A0
Burst read and single write
A0
A0
A2 A1 A0
A0
0 0 0
A0
0 0 1
A0
0 1 0
A0
0 1 1
A0
1 0 0
A0
1 0 1
A0
1 1 0
A0
1 1 1
A0
Burst Length
A0
Sequential
A0
Interleave
1
A0
1
A0
2
A0
2
A0
4
A0
4
A0
8
A0
8
A0
Reserved
A0
Reserved
A0
Full Page
A0
CAS Latency
A0
Reserved
A0
Reserved
2
A0
3
Reserved
A0
A6 A5 A4
A0
0 0 0
A0
0 1 0
A0
0 1 1
A0
1 0 0
A0
0 0 1
t
RSC
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
CLK
CS
RAS
CAS
WE
A0-A10
BS
Register
set data
next
command
A0
Reserved
"0"
"0"
"0"
"0"
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 19 -
Operating Timing Example
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RP
t
RAS
t
RAS
t
RCD
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active
Read
Active
Read
Active
Active
Active
Read
Read
Precharge
Precharge
Precharge
RAa
RBb
RAc
RBd
RAe
RAa
CAw
RBb
CBx
RAc
CAy
RBd
CBz
RAe
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
cy0
cy1
cy2
cy3
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 20 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)
(CLK = 100 MHz)
CLK
CKE
DQM
A0-A9,
A11
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active
Read
Active
Read
Active
Active
Active
Read
Read
t
RC
RAa
RBb
RAc
RBd
RAe
DQ
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
cy0
cy1
cy2
cy3
dz0
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
AP*
AP*
RAa
CAw RBb
CBx
RAc
CAy
RBd
RAe
CBz
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 21 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa
CAx
RBb
RBb
CBy
RAc
RAc
CAz
ax0
ax1
ax2
ax3
ax4
ax5
ax6
by0
by1
by4
by5
by6
by7
CZ0
Interleaved Bank Read (Burst Length=8, CAS Latency=3)
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active
Read
Precharge
Active
Read
Precharge
Active
t
AC
t
AC
Read
Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 22 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
ax0
ax1
ax2
ax3
ax4
ax5
ax6
ax7
by0
by1
by4
by5
by6
CZ0
RAa
RAa
CAx
RBb
RBb
CBy
Interleaved Bank Read (Burst Length=8, CAS Latency=3, Autoprecharge)
(CLK = 100 MHz)
RAc
RAc
CAz
* AP is the internal precharge start timing
Active
Read
Active
Active
Read
t
CAC
t
CAC
t
CAC
CLK
DQ
CKE
DQM
A0-A9
A10
BS1
WE
CAS
RAS
CS
Bank #0
Idle
Bank #1
Bank #2
Bank #3
Read
AP*
AP*
BS0
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 23 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa
CAx
RBb
RBb
CBy
RAc
RAc
CAz
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
Interleaved Bank Write (Burst Length=8)
(CLK = 100 MHz)
Write
Precharge
Active
Active
Write
Precharge
Active
Write
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Idle
Bank #0
Bank #1
Bank #2
Bank #3
t
RAS
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 24 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
RC
t
RAS
t
RP
t
RAS
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa
CAx
RBb
RBb
CBy
RAb
RAc
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
CAz
Interleaved Bank Write (Burst Length=8, Autoprecharge)
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active
Write
Write
Active
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
Active
Write
AP*
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 25 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
CCD
t
CCD
t
CCD
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RRD
RAa
RAa
CAI
RBb
RBb
CBx
CAy
CAm
CBz
a0
a1
a2
a3
bx0
bx1
Ay0
Ay1
Ay2
am0
am1
am2
bz0
bz1
bz2
bz3
Page Mode Read (Burst Length=4, CAS Latency=3)
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active
Read
Active
Read
Read
Read
Read
Precharge
t
AC
t
AC
t
AC
t
AC
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 26 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
t
RAS
t
RP
t
RCD
t
WR
RAa
RAa
CAx
CAy
ax0
ax1
ax2
ax3
ax4
ax5
ay1
ay0
ay2
ay4
ay3
Q Q
Q
Q
Q
Q
D
D
D
D
D
Page Mode Read / Write (Burst Length=8, CAS Latency=3)
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active
Read
Write
Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 27 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
AutoPrecharge Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
AC
t
AC
Active
Read
AP*
Active
Read
AP*
RAa
RAb
RAa
CAw
RAb
CAx
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 28 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
AutoPrecharge Write (Burst Length = 4)
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RP
t
RAS
t
RP
RAa
3CK
t
RCD
RAb
RAc
RAa
CAw
RAb
CAx
RAc
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
Active
Active
Write
AP*
Active
Write
AP*
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
t
RAS
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 29 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
AutoRefresh cycle
(CLK = 100 MHz)
All Banks
Prechage
Auto
Refresh
Auto Refresh (Arbitrary Cycle)
t
RC
t
RP
t
RC
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
WE
CAS
RAS
CS
BS0,1
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 30 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
SelfRefresh Cycle
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0,1
WE
CAS
RAS
CS
t
CKS
t
SB
t
CKS
t
CKS
All Banks
Precharge
Self Refresh
Entry
Arbitrary Cycle
t
RP
Self Refresh Cycle
t
RC
No Operation Cycle
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 31 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BS0
BS1
A10
A0-A9,
A11
DQM
CKE
DQ
Burst Read and Single Write (Burst Lenght = 4, CAS Latency = 3)
(CLK = 100 MHz)
t
RCD
RBa
RBa
CBv
CBw
CBx CBy
CBz
av0
av1
av2
av3
aw0
ax0
ay0
az0
az1
az2
az3
Q
Q
Q
Q
D
D
D
Q
Q
Q
Q
t
AC
t
AC
Read
Read
Single Write
Active
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 32 -
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
PowerDown Mode
(CLK = 100 MHz)
RAa
CAa
RAa
CAx
RAa
RAa
ax0
ax1
ax2
ax3
t
SB
t
CKS
t
CKS
t
CKS
t
SB
t
CKS
Active Standby
Power Down mode
Precharge Standby
Power Down mode
Active
NOP
Precharge
NOPActive
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the PowerDown mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
CLK
DQ
CKE
DQM
A0-A9
A10
BS
WE
CAS
RAS
CS
Wrate
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 33 -
Autoprecharge Timing ( Read Cycle )
Read
AP
0
11
10
9
8
7
6
5
4
3
2
1
Q0
Q0
Read
AP
Act
Q1
Read
AP
Act
Q1
Q2
AP
Act
Read
Act
Q0
Q3
(1) CAS Latency=2
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least t
RAS
(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note )
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
t
RP
Q0
Read
AP
Act
Q0
Read
AP
Act
Q1
Q0
Read
AP
Act
Q1
Q2
Q3
Read
AP
Act
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
(2) CAS Latency=3
t
RP
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 34 -
Autoprecharge timing ( Write Cycle )
D0
Write
Act
AP
0
11
10
9
8
7
6
5
4
3
2
1
D0
D0
D0
D0
AP
Act
D1
AP
Act
D1
D1
D2
D2
D3
D3
D4
D5
D6
D7
AP
Act
AP
Act
AP
Act
D1
D0
AP
Act
D1
D2
D3
AP
Act
D0
D1
D2
D3
D4
D5
D6
D7
Write
Write
Write
Write
Write
Write
Write
D0
(1) CAS Latency=2
(2) CAS Latency=3
Write
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS(min) .
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note )
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 35 -
Note ) The Output data must be masked by DQM to avoid I/O conflict
Timing Chart of Read to Write cycle
Read
Write
11
10
9
8
7
6
5
4
3
2
1
Read
Read
Read
Write
Write
D0
D1
D2
D3
Write
DQ
DQ
( a ) Command
0
DQ
DQ
DQM
( b ) Command
DQM
( b ) Command
DQM
DQM
D0
D1
D2
D3
D0
D1
D2
D3
D0
D1
D2
D3
(1) CAS Latency=2
( a ) Command
(2) CAS Latency=3
In the case of Burst Length=4
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 36 -
Timing Chart of Write-to-Read cycle
0
11
10
9
8
7
6
5
4
3
2
1
In the case of Burst Length=4
Q0
Read
Q1
Q2
Q3
Read
Write
Write
D0
D1
DQ
DQ
( a ) Command
( b ) Command
DQM
DQM
(2) CAS Latency=3
Q0
Q1
Q2
Q3
D0
Read
Write
Read
Write
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
( a ) Command
DQ
DQ
DQM
( b ) Command
DQM
(1) CAS Latency=2
D0
D0
D1
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 37 -
Timing chart of Burst Stop cycle ( Burst stop Command )
Read
BST
0
11
10
9
8
7
6
5
4
3
2
1
DQ
DQ
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Read
BST
( a ) CAS latency =2
Command
( b )CAS latency = 3
Command
(3) Read cycle
Q4
Q4
DQ
D0
D1
D2
D3
Write
BST
Command
(2) Write cycle
D4
Note )
represents the Burst stop command
BST
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 38 -
Timing chart of Burst Stop cycle ( Precharge Command )
In the case of Burst Lenght = 8
Note ) represents the Precharge command
PRCG
Read
PRCG
0
11
10
9
8
7
6
5
4
3
2
1
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Read
PRCG
Q4
Q4
( a )CAS latency =2
( b )CAS latency = 3
DQ
DQ
(1) Read cycle
(2) Write cycle
Commad
Commad
Write
PRCG
D0
D1
D2
D3
D0
D1
D2
D3
Write
PRCG
D4
D4
( b )CAS latency = 3
DQ
( a ) CAS latency =2
DQM
DQM
DQ
t
WR
t
WR
Commad
Commad
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 39 -
CKE/DQM Input timing ( Write cycle )
7
6
5
4
3
2
1
CKE MASK
( 1 )
D1
D6
D5
D3
D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
7
6
5
4
3
2
1
( 2 )
D1
D6
D5
D3
D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
7
6
5
4
3
2
1
( 3 )
D1
D6
D5
D4
D3
D2
CLK cycle No.
External
CKE
DQM
DQ
DQM MASK
DQM MASK
CKE MASK
CKE MASK
Internal
CLK
CLK
CLK
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 40 -
CKE/DQM Input timing ( Read cycle )
7
6
5
4
3
2
1
( 1 )
Q1
Q6
Q4
Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open
Open
7
6
5
4
3
2
1
Q1
Q6
Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open
( 2 )
7
6
5
4
3
2
1
Q1
Q6
Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Q5
Q4
( 3 )
Q4
CLK
CLK
CLK
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 41 -
Asynchronous Control
Input Buffer turn on time ( Power down mode exit time ) is specified by t
CKS
(min) + t
CK
(min)
Command
NOP
CLK
CKE
Command
A ) t
CK
< t
CKS
(min)+t
CK
(min)
Input Buffer Enable
Command
CLK
CKE
Command
B) t
CK
>= t
CKS
(min) + t
CK
(min)
Input Buffer Enable
Self Refresh/Power Down Mode Exit Timing
Note )
Command
NOP
All Input Buffer(Include CLK Buffer) are turned off in the Power Down mode
and Self Refresh mode
Represents the No-Operation command
Represents one command
t
CK
t
CK
t
CKS
(min)+t
CK
(min)
t
CKS
(min)+t
CK
(min)
W986416CH
1M x 16 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: June, 1999
- 42 -
Package Dimension
54L TSOP (II)-400 mil
Controlling Dimension : Millimeters
ZD
0.71
0.028
0.002
0.009
MAX.
MIN.
NOM.
A2
b
A
A1
0.24
1.00
0.05
0.40
1.20
0.15
SYMBOL
DIMENSION
(MM)
MAX.
MIN.
NOM.
e
0.80
0.0315
0.016
L
0.40
0.50
0.60
0.020
0.024
0.396
E
10.06
10.16
10.26
0.400
0.404
0.871
D
22.22
22.12
22.62
0.875
0.905
0.039
0.016
0.047
0.006
DIMENSION
(INCH)
0.10
0.004
0.32
L1
0.80
0.032
c
0.15
0.006
0.012
0.455
11.76
11.56
11.96
0.463
0.471
H
E
Y
0.10
0.004
SEATING PLANE
D
A2
A1
A
ZD
Y
E
e
b
1
27
54
28
H
E
L
C
L1
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