GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
V
CBO
Collector-emitter voltage peak value
V
BE
= 0V
-
180
V
V
CEO
Collector-emitter voltage (open base)
-
180
V
I
C
Collector current (DC)
-
17
A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation
T
mb
25
-
200
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 8.0A; I
B
= 0.8A
-
3
V
V
F
Diode forward voltage
I
F
= 8.0A
1.5
2.0
V
t
f
Fall time
I
C
=8A,I
B1
=-I
B2
=1A,V
CC
=40V
0.45
1.0
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
180
V
V
CEO
Collector-emitter voltage (open base)
-
180
V
V
EBO
Emitter-base oltage (open colloctor)
5
V
I
C
Collector current (DC)
-
17
A
I
B
Base current (DC)
-
5
A
P
tot
Total power dissipation
Tmb
25
-
200
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
-
150
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
I
CBO
Collector-base cut-off current
V
CB
=180V
-
0.2
mA
I
EBO
Emitter-base cut-off current
V
EB
=5V
-
0.2
mA
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=1mA
180
V
CEsat
Collector-emitter saturation voltages
I
C
= 8A; I
B
= 0.8A
-
2
V
h
FE
DC current gain
I
C
= 2A; V
CE
= 5V
50
200
f
T
Transition frequency at f = 5MHz
I
C
= 2A; V
CE
= 12V
10
-
MHz
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V,f=1MHZ
250
-
pF
t
on
On times
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
0.2
us
t
s
Tum-off storage time
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
1.5
us
t
f
Fall time
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
0.45
1.0
us
ELECTRICAL CHARACTERISTICS
MT-200
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
2SC2922
Silicon Epitaxial Planar Transistor
PDF 
ZIP