FEATURES
Power dissipation
P
CM
: 0.625 W Tamb=25
Collector current
I
CM
: 0.5 A
Collector-base voltage
--
V
(BR)CBO
: 45 V
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
- -
V(BR)
CBO
Ic= 100
A I
E
=0
45
V
Collector-emitter breakdown voltage
- -
V(BR)
CEO
Ic= 0. 1 mA I
B
=0
25
V
Emitter-base breakdown voltage
- -
V(BR)
EBO
I
E
= 100
A I
C
=0
5
V
Collector cut-off current
- -
I
CBO
V
CB
= 40 V I
E
=0
0.1
A
Collector cut-off current
- -
I
CEO
V
CE
= 20 V I
B
=0
0.1
A
Emitter cut-off current
- -
I
EBO
V
EB
= 5 V I
C
=0
0.1
A
H
FE 1
V
CE
= 1 V, I
C
= 50 mA
64
300
DC current gain(note)
H
FE 2
V
CE
= 1V, I
C
=500 mA
40
Collector-emitter saturation voltage
- -
V
CE
(sat)
I
C
= 500 mA, I
B
=50 mA
0.6
V
Base-emitter saturation voltage
--
V
BE
(sat)
I
C
= 500mA, I
B
= 50 mA
1.2
V
Base-emitter voltage
--
V
BE
I
E
=100mA
1.4
V
Transition frequency
f
T
V
CE
= 6 V, I
C
= 20 mA
f =
30MHz
150
MHz
CLASSIFICATION OF H
FE(1)
Rank
D
E
F
G
H
I
Range
64-91
78-112
96-135
112-166
144-220
190-300
1
2
3
TO 92
1.EMITTER
2.BASE
3.COLLECTOR
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
NPN SILICON TRANSISTOR
9013
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