BU406D NPN EPITAXIAL
SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE
TO-220
ABSOLUTE MAXIMUM RATINGS (T
a
=25
C
C
C
C
)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)
Collector Dissipation (Tc=25
C)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
400
400
6
7
10
4
60
150
-65~150
V
V
V
A
A
A
W
C
C
ELECTRICAL CHARACTERISTICS (Ta=25
C
C
C
C
)
Characterristic
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Cutoff Current (VBE=0)
Emitter Cutoff Current(IC=0)
Collector Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain Bandwith Product
Turn-Off Time
ICES
IEBO
VCE(sat)
VBE(sat)
fT
toff
VCE= 400V , VEB= 0
VEB= 6V , IC=0
IC=5A, IB=0.5A
IC=5A, IB=1.2A
VCE= 10V, IC=500mA
IC=5A, IB=0.5A
IC=5A, IB=0.8A
IC=6A, IB=1.2A
10
5
1
1.2
1.5
0.75
0.4
0.4
mA
mA
V
MHZ
S
S
S
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
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