PNP EPITAXIAL SILICON TRANSISTORS
WMBT3906
High Voltage Transistor
!
Power Dissipation: 225mW
!
Collector Current: Max.
0.2A
GUARANTEED PROBED CHARACTERISTICS (T
A
=25
)
Limits
Characteristic
Symbol
Test Conditions
MIN.
MAX.
Units
Collector-emitter
Breakdown Voltage
BV
CEO
I
C
=1mA
40
V
Collector-Base
Breakdown Voltage
BV
CBO
I
C
=100A
40
V
Emitter-Base
Breakdown Voltage
BV
EBO
I
E
=10A 5.0
V
Collector Cut-off
Current
I
CEX
V
CE
=30V, V
BE
=3V
50
nA
h
FE1
V
CE
=1V, I
C
=100A
60
h
FE2
V
CE
=1V, I
C
=1mA
80
h
FE3
V
CE
=1V, I
C
=10mA
100
300
h
FE4
V
CE
=1V, I
C
=50mA
60
DC Current Gain
h
FE5
V
CE
=1V, I
C
=100mA
30
BV
ESAT1
I
C
=10mA, I
B
=1mA
650
850
mV
Base-Emitter
Saturation Voltage
BV
ESAT2
I
C
=50mA,I
B
=5mA
950
mV
V
CE(SAT)1
I
C
=10mA, I
B
=1mA
250
mV
Collector-Emitter
Saturation Voltage
V
CE(SAT)2
I
C
=50mA, I
B
=5mA
400
mV
Transition Frequency
f
T
I
C
=10, V
CE
=20V f=100MHz
250
MHz
Collector-Base
Capacitance
C
OB
V
CB
=5V, f=1MHz
4.5
PF
NOTES:
Due to probe testing limitations, only the DC parameters are tested.
SOT
--
--
23
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
1. BASE
3. COLLECTOR
2. EMITTER
PDF 
ZIP