Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
900
V
I
D
Continuous Drain Current(@T
C
= 25
C)
9.0
A
Continuous Drain Current(@T
C
= 100
C)
5.7
A
I
DM
Drain Current Pulsed
(Note 1)
36.0
A
V
GS
Gate to Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
986
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
26
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
260
W
Derating Factor above 25 C
2.08
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
0.48
C/W
R
CS
Thermal Resistance, Case to Sink
-
0.24
-
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
40
C/W
WFW9N90
1/2
Features
R
DS(on)
(Max 1.3
)@V
GS
=10V
Gate Charge
(Typical 55nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range
(150C)
General Description
This Power MOSFET is produced using Wisdom's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
N-Channel MOSFET
Wisdom
Semiconductor
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
PROVISIONAL
TO-247
G
S
D
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
900
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 C
-
1.00
-
V/C
I
DSS
Drain-Source Leakage Current
V
DS
= 900V, V
GS
= 0V
-
-
10
uA
V
DS
= 720V, T
C
= 125 C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 30V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -30V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
3.0
-
5.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
=10 V, I
D
= 4.5A
-
1.05
1.3
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
2100
-
pF
C
oss
Output Capacitance
-
200
-
C
rss
Reverse Transfer Capacitance
-
25
-
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=450V, I
D
=9.0A, R
G
=25
(Note 4, 5)
-
50
-
ns
t
r
Rise Time
-
100
-
t
d(off)
Turn-off Delay Time
-
140
-
t
f
Fall Time
-
80
-
Q
g
Total Gate Charge
V
DS
=720V, V
GS
=10V, I
D
=9.0A
(Note 4, 5)
-
55
-
nC
Q
gs
Gate-Source Charge
-
15
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
25
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
9.0
A
I
SM
Pulsed Source Current
-
-
36.0
V
SD
Diode Forward Voltage
I
S
=9.0A, V
GS
=0V
-
-
1.4
V
t
rr
Reverse Recovery Time
I
S
=9.0A, V
GS
=0V, dI
F
/dt=100A/us
-
750
-
ns
Q
rr
Reverse Recovery Charge
-
7.5
-
uC
WFW9N90
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 23mH, I
AS
=9.0A, V
DD
= 50V, R
G
= 25
, Starting T
J
=
25C
3. I
SD
9.0A, di/dt
200A/us, V
DD
BV
DSS
, Starting T
J
=
25C
4. Pulse Test : Pulse Width
300us, Duty Cycle
2%
5. Essentially independent of operating temperature.
2/2
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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