GBJ15A GBJ15M
1 of 3 2003 Won-Top Electronics
GBJ15A GBJ15M
15A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop A
!
High Current Capability G
!
High
Reliability
!
High Surge Current Capability
B
!
Ideal for Printed Circuit Boards
C
+ ~ ~ -
H
K D
J E
Mechanical Data
P
R
R
!
Case:
Molded
Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208 N
!
Polarity: As Marked on Body
!
Weight: 4.0 grams (approx.)
!
Mounting Position: Any S
!
Marking: Type Number G
T
L
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
GBJ
15A
GBJ
15B
GBJ
15D
GBJ
15G
GBJ
15J
GBJ
15K
GBJ
15M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
C
= 100C
(Note 1)
I
O
15
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
240
A
Forward Voltage per diode @I
F
= 7.5A
V
FM
1.05
V
Peak Reverse Current @T
C
= 25C
At Rated DC Blocking Voltage @T
C
= 125C
I
R
10
500
A
Typical Thermal Resistance per leg (Note 1)
R
JC
2.7
C/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
C
Note: 1. Device mounted on 300 x 300 x 1.6mm thick Cu plate heatsink.
WTE
POWER SEMICONDUCTORS
GBJ-6
Dim
Min
Max
A
29.7
30.3
B
19.7
20.3
C
--
5.0
D
17.0
18.0
E
3.8
4.2
G
3.1
3.4
H
2.3
2.7
J
0.9
1.1
K
1.8
2.2
L
0.6
0.8
M
4.4
4.8
N
3.4
3.8
P
9.8
10.2
R
7.3
7.7
S
10.8
11.2
T
2.3
2.7
All Dimensions in mm
0.1
1.0
10
100
0.2
0.0
0.6
1.0
1.8
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(
A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics
, per element
F
T = 25 C
j
Pulse width = 300 s
1.4
0
60
1
20
1
80
2
40
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T = 25 C
j
Single half-sine-wave
(JEDEC method)
0
0
6
12
18
25
50
75
100
125
150
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
O
T , TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
Resistive or
Inductive load
9
15
3
10
0
100
0
1
0
1
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f = 1.0MHz
T = 25 C
j
GBJ15A GBJ15M 2 of 3 2003 Won-Top Electronics
GBJ15A GBJ15M
3 of 3 2003 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
GBJ15A
SIL Bridge
15 Units/Tube
GBJ15B
SIL Bridge
15 Units/Tube
GBJ15D
SIL Bridge
15 Units/Tube
GBJ15G
SIL Bridge
15 Units/Tube
GBJ15J
SIL Bridge
15 Units/Tube
GBJ15K
SIL Bridge
15 Units/Tube
GBJ15M
SIL Bridge
15 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
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