KBJ25A KBJ25M
1 of 3 2002 Won-Top Electronics
KBJ25A KBJ25M
25A BRIDGE RECTIFIER
Features
!
Diffused
Junction
!
Low Forward Voltage Drop A
!
High Current Capability G
!
High
Reliability
!
High Surge Current Capability
B
!
Ideal for Printed Circuit Boards
C
+ ~ ~ -
H
K D
J E
Mechanical Data
P
R
R
!
Case:
Molded
Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208 N
!
Polarity: As Marked on Body
!
Weight: 4.0 grams (approx.)
!
Mounting Position: Any S
!
Marking: Type Number G
T
L
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
KBJ
25A
KBJ
25B
KBJ
25D
KBJ
25G
KBJ
25J
KBJ
25K
KBJ
25M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
C
= 100C
(Note 1)
I
O
25
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
300
A
Forward Voltage (per element) @I
F
= 12.5A
V
FM
1.1
V
Peak Reverse Current @T
A
= 25C
At Rated DC Blocking Voltage @T
C
= 100C
I
R
10
200
A
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
C
Note: 1. Device mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink.
WTE
POWER SEMICONDUCTORS
KBJ-6
Dim
Min
Max
A
29.7
30.3
B
19.7
20.3
C
4.7
4.9
D
17.0
18.0
E
3.8
4.2
G
3.1
3.4
H
2.3
2.7
J
0.9
1.1
K
2.0
2.4
L
0.6
0.7
M
4.4
4.8
N
3.4
--
P
9.8
10.2
R
7.3
7.7
S
10.8
11.2
T
2.6
--
All Dimensions in mm
0.1
1.0
10
100
0.2
0.0
0.6
1.0
1.8
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(
A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics
, per element
F
T = 25 C
j
Pulse width = 300 s
1.4
0
75
150
225
300
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T = 25 C
j
Single half-sine-wave
(JEDEC method)
0
0
10
20
30
25
50
75
100
125
150
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
O
T , TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
Resistive or
Inductive load
15
25
5
10
0
100
0
1
0
1
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f = 1.0MHz
T = 25 C
j
KBJ25A KBJ25M 2 of 3 2002 Won-Top Electronics
KBJ25A KBJ25M
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
KBJ25A
SIL Bridge
20 Units/Tube
KBJ25B
SIL Bridge
20 Units/Tube
KBJ25D
SIL Bridge
20 Units/Tube
KBJ25G
SIL Bridge
20 Units/Tube
KBJ25J
SIL Bridge
20 Units/Tube
KBJ25K
SIL Bridge
20 Units/Tube
KBJ25M
SIL Bridge
20 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
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