MMBD4148
1 of 3 2002 Won-Top Electronics
MMBD4148
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
High Conductance L
!
Fast Switching A
!
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose and Switching B C
!
Plastic Material UL Recognition Flammability
Classification 94V-O M
E D
H
Mechanical Data
!
Case: SOT-23, Molded Plastic K
!
Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208 G
!
Polarity:
See
Diagram
!
Weight: 0.008 grams (approx.)
!
Mounting
Position:
Any
!
Marking: A2
TOP VIEW
Maximum Ratings
@T
A
=25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
Forward Continuous Current (Note 1)
I
F
300
mA
Average Rectified Output Current (Note 1)
I
O
200
mA
Peak Forward Surge Current (Note 1) @ t < 1.0s
I
FSM
2.0
A
Power Dissipation (Note 1)
P
d
350
mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
R
JA
357
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Electrical Characteristics
@T
A
=25C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage
V
(BR)R
75
--
V
@ I
RS
= 100A
Forward Voltage
V
F
--
1.0
V
@ I
F
= 10mA
Reverse Leakage Current
I
R
--
2.5
A
@ V
R
= 75V
Junction Capacitance
C
j
--
2.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
--
4.0
nS
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
WTE
POWER SEMICONDUCTORS
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
TOP VIEW
0.1
1000
100
10
400
600
800
1000
1200
I
,
INST
ANT
ANE
O
US
F
O
R
W
A
RD
CURRENT
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2, Typical Forward Characteristics
F
T = +25C
A
T = -25C
A
T = +75C
A
T = +125C
A
T = +150C
A
400
T , AMBIENT TEMPERATURE, (C)
A
Fig. 1 Power Derating Curve
P,
P
O
WER
D
ISSIP
AT
I
O
N
(
mW)
d
See Note 1
200
100
300
0
500
0
100
200
0.0001
10
1
0.001
0.01
0.1
0
50
100
150
200
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(
A)
F
m
T , JUNCTION TEMPERATURE ( )
Fig. 3, Typical Reverse Characteristics
j
C
V = 20V
R
V = 75V
R
MMBD4148 2 of 3 2002 Won-Top Electronics
MMBD4148
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
!
!
!
!
Package Type
Shipping Quantity
MMBD4148-T1
SOT-23
3000/Tape & Reel
MMBD4148-T3
SOT-23
10000/Tape & Reel
Products listed in bold are WTE Preferred devices.
!
T1 suffix refers to a 7" reel. T3 suffix refers to a 13" reel.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
RECOMMENDED FOOTPRINT
inches(mm)
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
0.035
(0.90)
0.031
(0.8)
0.035
(0.90)
0.079
(2.0)
0.037
(0.95)
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