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Электронный компонент: SB25100FCT

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SB2520FCT SB25100FCT
1 of 3 2002 Won-Top Electronics
SB2520FCT SB25100FCT
25A ISOLATION SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip B
!
Guard Ring for Transient Protection
!
High Current Capability, Low Forward C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3
D
Mechanical Data
F
E
!
Case: ITO-220 Full Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-750, Method 2026
!
Polarity: As Marked on Body I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1 - +
J
PIN 3 - PIN 2
K
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
2520FCT
SB
2530FCT
SB
2540FCT
SB
2550FCT
SB
2560FCT
SB
2580FCT
SB
25100FCT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
80
100
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @T
C
= 95C
I
O
25
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
200
A
Forward Voltage @I
F
= 12.5A
V
FM
0.55
0.75
0.85
V
Peak Reverse Current @T
A
= 25C
At Rated DC Blocking Voltage @T
A
= 100C
I
RM
0.5
100
mA
Typical Junction Capacitance (Note 1)
C
j
1100
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
ITO-220
Dim
Min
Max
A
14.9
15.1
B
--
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74
3.91
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
2.41
2.67
All Dimensions in mm
I
,
A
V
E
R
A
G
E
OUTP
UT
C
U
R
R
E
N
T
(
A
)
(AV)
0
5
10
15
20
25
10
40
60
80
100
120
140150
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
100
1000
2000
0.1
1.0
10
100
C
,
C
AP
A
C
IT
A
N
C
E
(p
F
)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25C
j
f = 1MHz
0
50
100
150
200
250
1
10
100
I
,
P
E
A
K
F
O
R
W
A
R
D
SUR
G
E
C
U
R
R
E
N
T
(A
)
FS
M
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
JEDEC Method
1
10
20
40
0
0.5
1.0
1.5
2.0
2.5
I,
N
S
TA
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D C
U
R
R
E
N
T (
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25C
Pulse Width = 300 s
2% Duty Cycle
j
SB
2520FCT SB25100FCT
2 of 3 2002 Won-Top Electronics
2580FCT - 25100FCT
2550FCT - 2560FCT
2520FCT - 2540FCT
SB2520FCT SB25100FCT
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
SB2520FCT
ITO-220
50 Units/Tube
SB2530FCT
ITO-220
50 Units/Tube
SB2540FCT
ITO-220
50 Units/Tube
SB2550FCT
ITO-220
50 Units/Tube
SB2560FCT
ITO-220
50 Units/Tube
SB2580FCT
ITO-220
50 Units/Tube
SB25100FCT
ITO-220
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com