SB820F SB8100F 1 of 3 2002 Won-Top Electronics
SB820F SB8100F
8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip B
!
Guard Ring for Transient Protection
!
High Current Capability, Low Forward C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2
D
Mechanical Data
F
E
!
Case: ITO-220A Full Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-202, Method 208
!
Polarity: See Diagram I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1 +
J
PIN 2 -
K
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
820F
SB
830F
SB
840F
SB
850F
SB
860F
SB
880F
SB
8100F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
80
100
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @T
C
= 95C
I
O
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
Forward Voltage @I
F
= 8.0A
V
FM
0.55
0.75
0.85
V
Peak Reverse Current @T
A
= 25C
At Rated DC Blocking Voltage @T
A
= 100C
I
RM
0.5
50
mA
Typical Junction Capacitance (Note 1)
C
j
700
pF
Typical Thermal Resistance Junction to Case (Note 2)
R
JC
6.9
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
WTE
POWER SEMICONDUCTORS
ITO-220A
Dim
Min
Max
A
14.9
15.1
B
--
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74
3.91
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
4.95
5.20
All Dimensions in mm
I
,
A
V
E
R
A
G
E
OUTP
UT
C
U
R
R
E
N
T
(
A
)
(AV)
0
2
4
6
8
10
10
40
60
80
100
120
140150
T , LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
100
1000
2000
0.1
1.0
10
100
C
,
C
AP
A
C
IT
A
N
C
E
(p
F
)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25C
j
f = 1MHz
0
30
60
90
120
150
1
10
100
I
,
P
E
A
K
F
O
R
W
A
R
D
SUR
G
E
C
U
R
R
E
N
T
(A
)
FS
M
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
JEDEC Method
0.1
10
20
40
0
0.5
1.0
1.5
2.0
2.5
I,
N
S
TA
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D C
U
R
R
E
N
T (
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
820F - 840F
850F - 860F
880F - 8100F
T = 25C
Pulse Width = 300 s
2% Duty Cycle
j
SB820F SB8100F
2 of 3 2002 Won-Top Electronics
SB820F SB8100F
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
SB820F
ITO-220A
50 Units/Tube
SB830F
ITO-220A
50 Units/Tube
SB840F
ITO-220A
50 Units/Tube
SB850F
ITO-220A
50 Units/Tube
SB860F
ITO-220A
50 Units/Tube
SB880F
ITO-220A
50 Units/Tube
SB8100F
ITO-220A
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
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