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Электронный компонент: X28C256-15

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X28C256
1
5 Volt, Byte Alterable E
2
PROM
Xicor, Inc. 1991, 1995 Patents Pending
Characteristics subject to change without notice
3855-2.0 8/19/98 T3/C0/D0 RZ
DESCRIPTION
The X28C256 is an 32K x 8 E
2
PROM, fabricated with
Xicor's proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable non-
volatile memories the X28C256 is a 5V only device. The
X28C256 features the JEDEC approved pinout for byte-
wide memories, compatible with industry standard RAMs.
The X28C256 supports a 64-byte page write operation,
effectively providing a 78
s/byte write cycle and en-
abling the entire memory to be typically written in less
than 2.5 seconds. The X28C256 also features
DATA
and Toggle Bit Polling, a system software support
scheme used to indicate the early completion of a write
cycle. In addition, the X28C256 includes a user-optional
software data protection mode that further enhances
Xicor's hardware write protect capability.
Xicor E
2
PROMs are designed and tested for applica-
tions requiring extended endurance. Inherent data re-
tention is greater than 100 years.
FEATURES
Access Time: 150ns
Simple Byte and Page Write
-- Single 5V Supply
--No External High Voltages or V
PP
Control
Circuits
-- Self-Timed
--No Erase Before Write
--No Complex Programming Algorithms
--No Overerase Problem
Low Power CMOS:
--Active: 60mA
--Standby: 200
A
Software Data Protection
-- Protects Data Against System Level
Inadvertent Writes
High Speed Page Write Capability
Highly Reliable Direct Write
TM
Cell
-- Endurance: 100,000 Write Cycles
-- Data Retention: 100 Years
Early End of Write Detection
--
DATA
Polling
--Toggle Bit Polling
256K
X28C256
32K x 8 Bit
PIN CONFIGURATION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
X28C256
PLASTIC DIP
CERDIP
FLAT PACK
SOIC
3855 FHD F02
TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
X28C256
A3
A4
A5
A6
A7
A12
A14
NC
VCC
NC
WE
A13
A8
A9
A11
OE
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A2
A1
A0
I/O0
I/O1
I/O2
NC
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
3855 ILL F23
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1 32 31 30
14 15 16 17 18 19 20
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
X28C256
A
7
A
12
A
14
NC
V
CC
WE
A
13
I/O
1
I/O
2
V
SS
NC
I/O
3
I/O
4
I/O
5
LCC
PLCC
3855 FHD F03
2
X28C256
PIN DESCRIPTIONS
Addresses (A
0
A
14
)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (
CE
)
The Chip Enable input must be LOW to enable all read/
write operations. When
CE
is HIGH, power consumption
is reduced.
Output Enable (
OE
)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
Data In/Data Out (I/O
0
I/O
7
)
Data is written to or read from the X28C256 through the
I/O pins.
Write Enable (
WE
)
The Write Enable input controls the writing of data to the
X28C256.
PIN NAMES
Symbol
Description
A
0
A
14
Address Inputs
I/O
0
I/O
7
Data Input/Output
WE
Write Enable
CE
Chip Enable
OE
Output Enable
V
CC
+5V
V
SS
Ground
NC
No Connect
3855 PGM T01
3855 FHD F01
X BUFFERS
LATCHES AND
DECODER
I/O BUFFERS
AND LATCHES
Y BUFFERS
LATCHES AND
DECODER
CONTROL
LOGIC AND
TIMING
256K-BIT
E2PROM
ARRAY
I/O0I/O7
DATA INPUTS/OUTPUTS
CE
OE
VCC
VSS
A0A14
ADDRESS
INPUTS
WE
FUNCTIONAL DIAGRAM
X28C256
11
I/O0
10
A0
14
VSS
9
A1
8
A2
7
A3
6
A4
5
A5
2
A12
28
VCC
12
I/O1
13
I/O2
15
I/O3
4
A6
3
A7
1
A14
16
I/O4
20
CE
22
OE
24
A9
17
I/O5
27
WE
19
I/O7
21
A10
23
A11
25
A8
18
I/O6
26
A13
BOTTOM VIEW
PGA
3855 FHD F04
PIN CONFIGURATION
X28C256
3
DEVICE OPERATION
Read
Read operations are initiated by both
OE
and
CE
LOW.
The read operation is terminated by either
CE
or
OE
returning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either
OE
or
CE
is HIGH.
Write
Write operations are initiated when both
CE
and
WE
are
LOW and
OE
is HIGH. The X28C256 supports both a
CE
and
WE
controlled write cycle. That is, the address is
latched by the falling edge of either
CE
or
WE
, whichever
occurs last. Similarly, the data is latched internally by the
rising edge of either
CE
or
WE
, whichever occurs first.
A byte write operation, once initiated, will automatically
continue to completion, typically within 5ms.
Page Write Operation
The page write feature of the X28C256 allows the entire
memory to be written in 2.5 seconds. Page write allows
two to sixty-four bytes of data to be consecutively written
to the X28C256 prior to the commencement of the
internal programming cycle. The host can fetch data
from another device within the system during a page
write operation (change the source address), but the
page address (A
6
through A
14
) for each subsequent
valid write cycle to the part during this operation must be
the same as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host
can write an additional one to sixty-three bytes in the
same manner as the first byte was written. Each succes-
sive byte load cycle, started by the
WE
HIGH to LOW
transition, must begin within 100
s of the falling edge of
the preceding
WE
. If a subsequent
WE
HIGH to LOW
transition is not detected within 100
s, the internal
automatic programming cycle will commence. There is
no page write window limitation. Effectively the page
write window is infinitely wide, so long as the host
continues to access the device within the byte load cycle
time of 100
s.
DATA
Polling (I/O
7
)
The X28C256 features
DATA
Polling as a method to
indicate to the host system that the byte write or page
write cycle has completed.
DATA
Polling allows a simple
bit test operation to determine the status of the X28C256,
eliminating additional interrupt inputs or external hard-
ware. During the internal programming cycle, any at-
tempt to read the last byte written will produce the
complement of that data on I/O
7
(i.e. write data = 0xxx
xxxx, read data = 1xxx xxxx). Once the programming
cycle is complete, I/O
7
will reflect true data. Note: If the
X28C256 is in the protected state and an illegal write
operation is attempted
DATA
Polling will not operate.
Toggle Bit (I/O
6
)
The X28C256 also provides another method for deter-
mining when the internal write cycle is complete. During
the internal programming cycle I/O
6
will toggle from
HIGH to LOW and LOW to HIGH on subsequent
attempts to read the device. When the internal cycle is
complete the toggling will cease and the device will be
accessible for additional read or write operations.
Write Operation Status Bits
The X28C256 provides the user two write operation
status bits. These can be used to optimize a system
write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
Figure 1. Status Bit Assignment
5
TB
DP
4
3
2
1
0
I/O
RESERVED
TOGGLE BIT
DATA POLLING
3855 FHD F11
4
X28C256
DATA
POLLING I/O
7
Figure 2.
DATA
Polling Bus Sequence
Figure 3.
DATA
Polling Software Flow
3855 FHD F13
DATA
Polling can effectively halve the time for writing to
the X28C256. The timing diagram in Figure 2 illustrates
the sequence of events on the bus. The software flow
diagram in Figure 3 illustrates one method of implement-
ing the routine.
3855 FHD F12
CE
OE
WE
I/O7
X28C256
READY
LAST
WRITE
HIGH Z
VOL
VIH
A0A14
An
An
An
An
An
An
VOH
An
WRITE DATA
SAVE LAST DATA
AND ADDRESS
READ LAST
ADDRESS
IO7
COMPARE?
X28C256
READY
NO
YES
WRITES
COMPLETE?
NO
YES
X28C256
5
THE TOGGLE BIT I/O
6
Figure 4. Toggle Bit Bus Sequence
CE
OE
WE
I/O6
X28C256
READY
VOH
VOL
LAST
WRITE
HIGH Z
* Beginning and ending state of I/O6 will vary.
*
*
3855 FHD F14
Figure 5. Toggle Bit Software Flow
3855 FHD F15
The Toggle Bit can eliminate the software housekeeping
chore of saving and fetching the last address and data
written to a device in order to implement
DATA
Polling.
This can be especially helpful in an array comprised of
multiple X28C256 memories that is frequently updated.
The timing diagram in Figure 4 illustrates the sequence
of events on the bus. The software flow diagram in
Figure 5 illustrates a method for polling the Toggle Bit.
LOAD ACCUM
FROM ADDR n
COMPARE
ACCUM WITH
ADDR n
X28C256
READY
COMPARE
OK?
NO
YES
LAST WRITE
6
X28C256
HARDWARE DATA PROTECTION
The X28C256 provides three hardware features (com-
patible with X28C64) that protect nonvolatile data from
inadvertent writes.
Noise Protection--A
WE
pulse typically less than
20ns will not initiate a write cycle.
Default V
CC
Sense--All write functions are inhibited
when V
CC
is
3.5V typically.
Write Inhibit--Holding either
OE
LOW,
WE
HIGH,
or
CE
HIGH will prevent an inadvertent write cycle
during power-up and power-down, maintaining data
integrity.
SOFTWARE DATA PROTECTION
The X28C256 offers a software controlled data protec-
tion feature. The X28C256 is shipped from Xicor with the
software data protection NOT ENABLED; that is, the
device will be in the standard operating mode. In this
mode data should be protected during power-up/-down
operations through the use of external circuits. The host
would then have open read and write access of the
device once V
CC
was stable.
The X28C256 can be automatically protected during
power-up and power-down without the need for external
circuits by employing the software data protection fea-
ture. The internal software data protection circuit is
enabled after the first write operation utilizing the soft-
ware algorithm. This circuit is nonvolatile and will remain
set for the life of the device unless the reset command
is issued.
Once the software protection is enabled, the X28C256
is also protected from inadvertent and accidental writes
in the powered-up state. That is, the software algorithm
must be issued prior to writing additional data to the
device.
Software Algorithm
Selecting the software data protection mode requires
the host system to precede data write operations by a
series of three write operations to three specific ad-
dresses. Refer to Figure 6 and 7 for the sequence. The
three-byte sequence opens the page write window
enabling the host to write from one to sixty-four bytes of
data.* Once the page load cycle has been completed,
the device will automatically be returned to the data
protected state.
*Note: Once the three-byte sequence is issued it
must be followed by a valid byte or page write
operation.
X28C256
7
SOFTWARE DATA PROTECTION
Figure 6. Timing Sequence--Byte or Page Write
3855 FHD F16
Figure 7. Write Sequence for
Software Data Protection
WRITE LAST
BYTE TO
LAST ADDRESS
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA A0
TO ADDRESS
5555
WRITE DATA XX
TO ANY
ADDRESS
AFTER tWC
RE-ENTERS DATA
PROTECTED STATE
WRITE DATA AA
TO ADDRESS
5555
BYTE/PAGE
LOAD ENABLED
3855 FHD F17
Regardless of whether the device has previously been
protected or not, once the software data protection
algorithm is used and data has been written, the X28C256
will automatically disable further writes unless another
command is issued to cancel it. If no further commands
are issued the X28C256 will be write protected during
power-down and after any subsequent power-up.
Note: Once initiated, the sequence of write operations
should not be interrupted.
CE
WE
(VCC)
WRITE
PROTECTED
VCC
0V
DATA
ADDR.
AA
5555
55
2AAA
A0
5555
tBLC MAX
WRITES
OK
BYTE
OR
PAGE
tWC
tBLC MAX
tWPH2
8
X28C256
RESETTING SOFTWARE DATA PROTECTION
Figure 8. Reset Software Data Protection Timing Sequence
3855 FHD F18
Figure 9. Software Sequence to
Deactivate Software Data Protection
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA 80
TO ADDRESS
5555
WRITE DATA AA
TO ADDRESS
5555
WRITE DATA 20
TO ADDRESS
5555
WRITE DATA AA
TO ADDRESS
5555
3855 FHD F19
In the event the user wants to deactivate the software
data protection feature for testing or reprogramming in
an E
2
PROM programmer, the following six step algo-
rithm will reset the internal protection circuit. After t
WC
,
the X28C256 will be in standard operating mode.
Note:
Once initiated, the sequence of write operations
should not be interrupted.
CE
WE
STANDARD
OPERATING
MODE
VCC
DATA
ADDR.
AA
5555
55
2AAA
80
5555
tWC
AA
5555
55
2AAA
20
5555
X28C256
9
SYSTEM CONSIDERATIONS
Because the X28C256 is frequently used in large memory
arrays it is provided with a two line control architecture
for both read and write operations. Proper usage can
provide the lowest possible power dissipation and elimi-
nate the possibility of contention where multiple I/O pins
share the same bus.
To gain the most benefit it is recommended that
CE
be
decoded from the address bus and be used as the
primary device selection input. Both
OE
and
WE
would
then be common among all devices in the array. For a
read operation this assures that all deselected devices
are in their standby mode and that only the selected
device(s) is outputting data on the bus.
Because the X28C256 has two power modes, standby
and active, proper decoupling of the memory array is of
prime concern. Enabling
CE
will cause transient current
spikes. The magnitude of these spikes is dependent on
the output capacitive loading of the I/Os. Therefore, the
larger the array sharing a common bus, the larger the
transient spikes. The voltage peaks associated with the
current transients can be suppressed by the proper
selection and placement of decoupling capacitors. As a
minimum, it is recommended that a 0.1
F high fre-
quency ceramic capacitor be used between V
CC
and
V
SS
at each device. Depending on the size of the array,
the value of the capacitor may have to be larger.
In addition, it is recommended that a 4.7
F electrolytic
bulk capacitor be placed between V
CC
and V
SS
for each
eight devices employed in the array. This bulk capacitor
is employed to overcome the voltage droop caused by
the inductive effects of the PC board traces.
Normalized Active Supply Current
vs. Ambient Temperature
Normalized Standby Supply Current
vs. Ambient Temperature
55
+25
+125
0.6
0.8
1.0
1.2
1.4
VCC = 5V
AMBIENT TEMPERATURE (
C)
NORMALIZED I
CC
55
+25
+125
0.6
0.8
1.0
1.2
1.4
VCC = 5V
AMBIENT TEMPERATURE (
C)
NORMALIZED I
SB1
3855 FHD F20.1
3855 FHD F21.1
10
X28C256
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias
X28C256 ...................................... 10
C to +85
C
X28C256I, X28C256M ............... 65
C to +135
C
Storage Temperature ....................... 65
C to +150
C
Voltage on any Pin with
Respect to V
SS .......................................
1V to +7V
D.C. Output Current ............................................. 5mA
Lead Temperature
(Soldering, 10 seconds) .............................. 300
C
*COMMENT
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Commercial
0
C
+70
C
Industrial
40
C
+85
C
Military
55
C
+125
C
3855 PGM T02.1
Supply Voltage
Limits
X28C256
5V
10%
3855 PGM T03.1
Notes: (1) Typical values are for T
A
= 25
C and nominal supply voltage and are not tested
(2) I
SB2
max. of 200
A available from Xicor. Contact local sales office and reference X28C256 C7125.
(3) V
IL
min. and V
IH
max. are for reference only and are not tested.
D.C. OPERATING CHARACTERISTICS (over recommended operating conditions, unless otherwise specified)
Limits
Symbol
Parameter
Min.
Typ.
(1)
Max.
Units
Test Conditions
I
CC
V
CC
Current (Active)
30
60
mA
CE
=
OE
= V
IL
,
WE
= V
IH
,
(TTL Inputs)
All I/O's = Open, Address
Inputs = .4V/2.4V @ f = 5MHz
I
SB1
V
CC
Current (Standby)
1
2
mA
CE
= V
IH
,
OE
= V
IL
(TTL Inputs)
All I/O's = Open, Other Inputs = V
IH
I
SB2
(2)
V
CC
Current (Standby)
200
500
A
CE
= V
CC
0.3V,
OE
= V
IL
(CMOS Inputs)
All I/O's = Open,
Other Inputs = V
CC
0.3V
I
LI
Input Leakage Current
10
A
V
IN
= V
SS
to V
CC
I
LO
Output Leakage Current
10
A
V
OUT
= V
SS
to V
CC
,
CE
= V
IH
V
lL
(3)
Input LOW Voltage
1
0.8
V
V
IH
(3)
Input HIGH Voltage
2
V
CC
+ 1
V
V
OL
Output LOW Voltage
0.4
V
I
OL
= 2.1mA
V
OH
Output HIGH Voltage
2.4
V
I
OH
= 400
A
3855 PGM T04.2
X28C256
11
ENDURANCE AND DATA RETENTION
Parameter
Min.
Units
Endurance
100,000
Cycles
Data Retention
100
Years
3855 PGM T05.3
POWER-UP TIMING
Symbol
Parameter
Max.
Units
t
PUR
(4)
Power-up to Read Operation
100
s
t
PUW
(4)
Power-up to Write Operation
5
ms
3855 PGM T06
CAPACITANCE T
A
= +25
C, f = 1MHz, V
CC
= 5V
Symbol
Parameter
Max.
Units
Test Conditions
C
I/O
(4)
Input/Output Capacitance
10
pF
V
I/O
= 0V
C
IN
(4)
Input Capacitance
6
pF
V
IN
= 0V
3855 PGM T07.1
A.C. CONDITIONS OF TEST
Input Pulse Levels
0V to 3V
Input Rise and
Fall Times
10ns
Input and Output
Timing Levels
1.5V
3855 PGM T08.1
MODE SELECTION
CE
OE
WE
Mode
I/O
Power
L
L
H
Read
D
OUT
Active
L
H
L
Write
D
IN
Active
H
X
X
Standby and
High Z
Standby
Write Inhibit
X
L
X
Write Inhibit
--
--
X
X
H
Write Inhibit
--
--
3855 PGM T09
Note: (4) This parameter is periodically sampled and not 100% tested.
EQUIVALENT A.C. LOAD CIRCUIT
WAVEFORM
INPUTS
OUTPUTS
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don't Care:
Changes
Allowed
Changing:
State Not
Known
N/A
Center Line
is High
Impedance
SYMBOL TABLE
3855 FHD F22.3
5V
1.92K
100pF
OUTPUT
1.37K
12
X28C256
A.C. CHARACTERISTICS (over recommended operating conditions, unless otherwise specified)
Read Cycle Limits
X28C256-15
X28C256-20
X28C256-25
X28C256
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Units
t
RC
Read Cycle Time
150
200
250
300
ns
t
CE
Chip Enable Access Time
150
200
250
300
ns
t
AA
Address Access Time
150
200
250
300
ns
t
OE
Output Enable Access Time
50
80
100
100
ns
t
LZ
(5)
CE
LOW to Active Output
0
0
0
0
ns
t
OLZ
(5)
OE
LOW to Active Output
0
0
0
0
ns
t
HZ
(5)
CE
HIGH to High Z Output
50
50
50
50
ns
t
OHZ
(5)
OE
HIGH to High Z Output
50
50
50
50
ns
t
OH
Output Hold from
0
0
0
0
ns
Address Change
3855 PGM T10.1
Read Cycle
3855 FHD F05
Note: (5) t
LZ
min., t
HZ
, t
OLZ
min., and t
OHZ
are peridocally sampled and not 100% tested. t
HZ
and t
OHZ
are measured, with C
L
= 5pF, from
the point when
CE
or
OE
return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
tCE
tRC
ADDRESS
CE
OE
WE
DATA VALID
DATA VALID
tOE
tLZ
tOLZ
tOH
tAA
tHZ
tOHZ
DATA I/O
VIH
HIGH Z
X28C256
13
WRITE CYCLE LIMITS
Symbol
Parameter
Min.
(9)
Typ.
(6)
Max.
Units
t
WC
(7)
Write Cycle Time
5
10
ms
t
AS
Address Setup Time
0
ns
t
AH
Address Hold Time
150
ns
t
CS
Write Setup Time
0
ns
t
CH
Write Hold Time
0
ns
t
CW
CE
Pulse Width
100
ns
t
OES
OE
HIGH Setup Time
10
ns
t
OEH
OE
HIGH Hold Time
10
ns
t
WP
WE
Pulse Width
100
ns
t
WPH
WE
HIGH Recovery
50
ns
t
WPH2
(8)
SDP
WE
Recovery
1
s
t
DV
Data Valid
1
s
t
DS
Data Setup
50
ns
t
DH
Data Hold
10
ns
t
DW
Delay to Next Write
10
s
t
BLC
(9)
Byte Load Cycle
1
100
s
3855 PGM T11.1
WE
Controlled Write Cycle
3855 FHD F06
Notes: (6) Typical values are for T
A
= 25
C and nominal supply voltage.
(7) t
WC
is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum
time the device requires to automatically complete the internal write operation.
(8) t
WPH
is the normal page write operation
WE
recovery time. t
WPH2
is the
WE
recovery time needed only after the end of issuing
the three-byte SDP command sequence and before writing the first byte of data to the array. Refer to Figure 6 which illustrates
the t
WPH2
requirement.
(9) For faster t
WC
and t
BLC
, refer to X28HC256 or X28VC256.
ADDRESS
tAS
tWC
tAH
tOES
tDV
tDS
tDH
tOEH
CE
WE
OE
DATA IN
DATA OUT
HIGH Z
DATA VALID
tCS
tCH
tWP
14
X28C256
CE
Controlled Write Cycle
Notes: (10) Between successive byte writes within a page write operation,
OE
can be strobed LOW: e.g. this can be done with
CE
and
WE
HIGH to fetch data from another memory device within the system for the next write; or with
WE
HIGH and
CE
LOW effectively
performing a polling operation.
(11) The timings shown above are unique to page write operations. Individual byte load operations within the page write must
conform to either the
CE
or
WE
controlled write cycle timing.
3855 FHD F07
Page Write Cycle
3855 FHD F08
ADDRESS
tAS
tOEH
tWC
tAH
tOES
tCS
tDV
tDS
tDH
tCH
CE
WE
OE
DATA IN
DATA OUT
HIGH Z
DATA VALID
tCW
WE
OE
(10)
LAST BYTE
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
tWP
tWPH
tBLC
tWC
CE
ADDRESS*
(11)
I/O
*For each successive write within the page write operation, A6A14 should be the same or
writes to an unknown address could occur.
X28C256
15
DATA
Polling Timing Diagram
(12)
3855 FHD F09
Toggle Bit Timing Diagram
(12)
CE
OE
WE
I/O6
tOES
tDW
tWC
tOEH
HIGH Z
*
*
* Starting and ending state of I/O6 will vary, depending upon actual tWC.
3855 FHD F10
Note: (12) Polling operations are by definition read cycles and are therefore subject to read cycle timings.
ADDRESS
An
DIN=X
DOUT=X
DOUT=X
tWC
tOEH
tOES
An
An
CE
WE
OE
I/O7
tDW
16
X28C256
PACKAGING INFORMATION
3926 FHD F04
NOTE:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. PACKAGE DIMENSIONS EXCLUDE MOLDING FLASH
0.022 (0.56)
0.014 (0.36)
0.160 (4.06)
0.120 (3.05)
0.625 (15.88)
0.590 (14.99)
0.110 (2.79)
0.090 (2.29)
1.470 (37.34)
1.400 (35.56)
1.300 (33.02)
REF.
PIN 1 INDEX
0.160 (4.06)
0.125 (3.17)
0.030 (0.76)
0.015 (0.38)
PIN 1
SEATING
PLANE
0.065 (1.65)
0.040 (1.02)
0.557 (14.15)
0.510 (12.95)
0.085 (2.16)
0.040 (1.02)
0
15
28-LEAD PLASTIC DUAL IN-LINE PACKAGE TYPE P
TYP. 0.010 (0.25)
X28C256
17
PACKAGING INFORMATION
0.620 (15.75)
0.590 (14.99)
TYP. 0.614 (15.60)
0.110 (2.79)
0.090 (2.29)
TYP. 0.100 (2.54)
0.023 (0.58)
0.014 (0.36)
TYP. 0.018 (0.46)
0.060 (1.52)
0.015 (0.38)
3926 FHD F08
PIN 1
0.200 (5.08)
0.125 (3.18)
0.065 (1.65)
0.038 (0.97)
TYP. 0.055 (1.40)
0.610 (15.49)
0.500 (12.70)
0.100 (2.54) MAX.
0.015 (0.38)
0.008 (0.20)
0
15
28-LEAD HERMETIC DUAL IN-LINE PACKAGE TYPE D
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
1.490 (37.85) MAX.
SEATING
PLANE
0.005 (0.127) MIN.
0.232 (5.90) MAX.
0.150 (3.81) MIN.
18
X28C256
PACKAGING INFORMATION
0.021 (0.53)
0.013 (0.33)
0.420 (10.67)
0.050 (1.27) TYP.
TYP. 0.017 (0.43)
0.045 (1.14) x 45
0.300 (7.62)
REF.
0.453 (11.51)
0.447 (11.35)
TYP. 0.450 (11.43)
0.495 (12.57)
0.485 (12.32)
TYP. 0.490 (12.45)
PIN 1
0.400
(10.16)
REF.
0.553 (14.05)
0.547 (13.89)
TYP. 0.550 (13.97)
0.595 (15.11)
0.585 (14.86)
TYP. 0.590 (14.99)
3
TYP.
0.048 (1.22)
0.042 (1.07)
0.140 (3.56)
0.100 (2.45)
TYP. 0.136 (3.45)
0.095 (2.41)
0.060 (1.52)
--
0.015 (0.38)
SEATING PLANE
0.004 LEAD
CO PLANARITY
3926 FHD F13
32-LEAD PLASTIC LEADED CHIP CARRIER PACKAGE TYPE J
NOTES:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. DIMENSIONS WITH NO TOLERANCE FOR REFERENCE ONLY
0.510"
TYPICAL
0.050"
TYPICAL
0.050"
TYPICAL
0.300"
REF
FOOTPRINT
0.400"
0.410"
0.030" TYPICAL
32 PLACES
X28C256
19
PACKAGING INFORMATION
0.150 (3.81) BSC
0.458 (11.63)
0.458 (11.63)
0.442 (11.22)
PIN 1
3926 FHD F14
0.020 (0.51) x 45
REF.
0.095 (2.41)
0.075 (1.91)
0.022 (0.56)
0.006 (0.15)
0.055 (1.39)
0.045 (1.14)
TYP. (4) PLCS.
0.040 (1.02) x 45
REF.
TYP. (3) PLCS.
0.050 (1.27) BSC
0.028 (0.71)
0.022 (0.56)
(32) PLCS.
0.200 (5.08)
BSC
0.558 (14.17)
0.088 (2.24)
0.050 (1.27)
0.120 (3.05)
0.060 (1.52)
PIN 1 INDEX CORNER
32-PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE TYPE E
NOTE:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. TOLERANCE:
1% NLT
0.005 (0.127)
0.300 (7.62)
BSC
0.015 (0.38)
MIN.
0.400 (10.16)
BSC
0.560 (14.22)
0.540 (13.71)
DIA.
0.015 (0.38)
0.003 (0.08)
20
X28C256
PACKAGING INFORMATION
28-LEAD CERAMIC FLAT PACK TYPE F
3926 FHD F16
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
0.740 (18.80)
MAX.
0.019 (0.48)
0.015 (0.38)
0.050 (1.27) BSC
0.045 (1.14) MAX.
PIN 1 INDEX
1
28
0.130 (3.30)
0.090 (2.29)
0.045 (1.14)
0.025 (0.66)
0.180 (4.57)
MIN.
0.006 (0.15)
0.003 (0.08)
0.030 (0.76)
MIN.
0.370 (9.40)
0.250 (6.35)
TYP. 0.300 2 PLCS.
0.440 (11.18)
MAX.
X28C256
21
PACKAGING INFORMATION
0.561 (14.25)
0.541 (13.75)
3926 FHD F15
28-LEAD CERAMIC PIN GRID ARRAY PACKAGE TYPE K
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
0.020 (0.51)
0.016 (0.41)
12
13
15
17
18
11
10
14
16
19
9
8
20
21
7
6
22
23
5
2
28
24
25
4
3
1
27
26
TYP. 0.100 (2.54)
ALL LEADS
0.080 (2.03)
0.070 (1.78)
4 CORNERS
PIN 1 INDEX
0.660 (16.76)
0.640 (16.26)
0.110 (2.79)
0.090 (2.29)
0.072 (1.83)
0.062 (1.57)
0.185 (4.70)
0.175 (4.44)
0.050 (1.27)
0.008 (0.20)
A
A
A
A
NOTE: LEADS 4,12,18 & 26
0.080 (2.03)
0.070 (1.78)
22
X28C256
PACKAGING INFORMATION
28-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S
0.299 (7.59)
0.290 (7.37)
0.419 (10.64)
0.394 (10.01)
0.020 (0.508)
0.014 (0.356)
0.0200 (0.5080)
0.0100 (0.2540)
0.050 (1.270)
BSC
0.713 (18.11)
0.697 (17.70)
0.012 (0.30)
0.003 (0.08)
0.105 (2.67)
0.092 (2.34)
0.0350 (0.8890)
0.0160 (0.4064)
0.013 (0.32)
0.008 (0.20)
0
8
X 45
3926 FHD F17
NOTES:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. FORMED LEAD SHALL BE PLANAR WITH RESPECT TO ONE ANOTHER WITHIN 0.004 INCHES
SEATING PLANE
BASE PLANE
0.42" MAX
0.030" TYPICAL
28 PLACES
0.050" TYPICAL
0.050"
TYPICAL
FOOTPRINT
X28C256
23
PACKAGING INFORMATION
3926 ILL F38.1
8.02 (0.315)
7.98 (0.314)
1.18 (0.046)
1.02 (0.040)
0.17 (0.007)
0.03 (0.001)
0.26 (0.010)
0.14 (0.006)
0.50 (0.0197) BSC
0.58 (0.023)
0.42 (0.017)
14.15 (0.557)
13.83 (0.544)
12.50 (0.492)
12.30 (0.484)
PIN #1 IDENT.
O 0.76 (0.03)
SEATING
PLANE
SEE NOTE 2
SEE NOTE 2
0.50 0.04
(0.0197 0.0016)
0.30 0.05
(0.012 0.002)
14.80 0.05
(0.583 0.002)
1.30 0.05
(0.051 0.002)
0.17 (0.007)
0.03 (0.001)
TYPICAL
32 PLACES
15 EQ. SPC. 0.50 0.04
0.0197 0.016 = 7.50 0.06
(0.295 0.0024) OVERALL
TOL. NON-CUMULATIVE
SOLDER PADS
FOOTPRINT
NOTE:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES IN PARENTHESES).
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) TYPE T
24
X28C256
Device
ORDERING INFORMATION
Access Time
15 = 150ns
20 = 200ns
25 = 250ns
Blank = 300ns
35 = 350ns
Temperature Range
Blank = Commercial = 0
C to +70
C
I = Industrial = 40
C to +85
C
M = Military = 55
C to +125
C
MB = MIL-STD-883
Package
P = 28-Lead Plastic DIP
D = 28-Lead Cerdip
J = 32-Lead PLCC
E = 32-Pad LCC
F = 28-Lead Flat Pack
K = 28-Lead Pin Grid Array
S = 28-Lead Plastic SOIC
T = 32-Lead TSOP
X28C256 X X
-X
LIMITED WARRANTY
Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty,
express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement.
Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and
prices at any time and without notice.
Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are
implied.
U.S. PATENTS
Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475;
4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and
additional patents pending.
LIFE RELATED POLICY
In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error
detection and correction, redundancy and back-up features to prevent such an occurence.
Xicor's products are not authorized for use in critical components in life support devices or systems.
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or effectiveness.