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Электронный компонент: X68C64PM

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X68C64
1
Xicor, Inc. 1991, 1995, 1996 Patents Pending
Characteristics subject to change without notice
3868-2.6 9/16/96 T0/C0/D2 SH
E
2
Micro-Peripheral
64K
X68C64
8192 x 8 Bit
3868 FHD F02
CONCURRENT READ WRITE
TM
is a trademark of Xicor, Inc.
68XX Microcontroller Family Compatible
FEATURES
CONCURRENT READ WRITE
TM
--Dual Plane Architecture
--Isolates Read/Write Functions
Between Planes
--Allows Continuous Execution of Code
From One Plane While Writing in
the Other Plane
Multiplexed Address/Data Bus
--Direct Interface to Popular 8-bit
Microcontrollers, e.g., Motorola M6801/03,
M68HC11 Family
High Performance CMOS
--Fast Access Time, 120ns
--Low Power
--60mA Maximum Active
--500
A Maximum Standby
Software Data Protection
Block Protect Register
--Individually Set Write Lock Out in 1K Blocks
Toggle Bit Polling
--Early End of Write Detection
Page Mode Write
--Allows up to 32 Bytes to be Written in
One Write Cycle
High Reliability
--Endurance: 100,000 Write Cycles
--Data Retention: 100 Years
DESCRIPTION
The X68C64 is an 8K x 8 E
2
PROM fabricated with
advanced CMOS Textured Poly Floating Gate Technol-
ogy. The X68C64 features a Multiplexed Address and
Data bus allowing a direct interface to a variety of
popular single-chip microcontrollers operating in ex-
panded multiplexed mode without the need for addi-
tional interface circuitry.
The X68C64 is internally configured as two independent
4K x 8 memory arrays. This feature provides the ability
to perform nonvolatile memory updates in one array and
continue operation out of code stored in the other array;
effectively eliminating the need for an auxiliary memory
device for code storage.
To write to the X68C64, a three-byte command
sequence must precede the byte(s) being written. The
X68C64 also provides a second generation software
data protection scheme called Block Protect. Block
Protect can provide write lockout of the entire device or
selected 1K blocks. There are eight 1K x 8 blocks that
can be write protected individually in any combination
required by the user. Block Protect, in addition to Write
Control input, allows the different segments of the memory
to have varying degrees of alterability in normal system
operation.
CONTROL
LOGIC
SOFTWARE
DATA
PROTECT
CE
R/W
E
SEL
A8A11
AS
L
A
T
C
H
E
S
D
E
C
O
D
E
A12
A12
M
U
X
1K BYTES
1K BYTES
1K BYTES
1K BYTES
Y DECODE
I/O & ADDRESS LATCHES AND BUFFERS
A/D0A/D7
WC
1K BYTES
1K BYTES
1K BYTES
1K BYTES
A12
X
FUNCTIONAL DIAGRAM
X68C64
2
PIN DESCRIPTIONS
Address/Data (A/D
0
A/D
7
)
Multiplexed low-order addresses and data. The ad-
dresses flow into the device while AS is HIGH. After AS
transitions from a HIGH to LOW the addresses are
latched. Once the addresses are latched these pins
input data or output data depending on E, R/
W
, and CE.
Addresses (A
8
A
12
)
High order addresses flow into the device when AS is
HIGH and are latched when AS goes LOW.
Chip Enable (CE)
The Chip Enable input must be HIGH to enable all read/
write operations. When CE is LOW and AS is LOW, the
X68C64 is placed in the low power standby mode.
Enable (E)
When used with a MC6801 or MC6803, the E input is tied
directly to the E output of the microcontroller.
Read/Write (R/
W
)
When used with a MC6801 or MC6803, the R/
W
input is
tied directly to the R/
W
output of the microcontroller.
Address Strobe (AS)
Addresses flow through the latches to address decoders
when AS is HIGH and are latched when AS transitions
from a HIGH to LOW.
Device Select (
SEL
)
Must be connected to V
SS
.
Write Control (
WC
)
The Write Control allows external circuitry to abort a
page load cycle once it has been initiated. This input is
useful in applications in which a power failure or proces-
sor RESET could interrupt a page load cycle. In this
case, the microcontroller might drive all signals HIGH,
causing bad data to be latched into the E
2
PROM. If the
Write Control input is driven HIGH (before t
TBLC
Max)
after Read/Write (R/
W
) goes HIGH, the write cycle will
be aborted.
When
WC
is LOW (tied to V
SS
) the X68C64 will be
enabled to perform write operations. When
WC
is HIGH
normal read operations may be performed, but all at-
tempts to write to the device will be disabled.
PIN CONFIGURATION
PIN NAMES
Symbol
Description
AS
Address Strobe
A/D
0
A/D
7
Address Inputs/Data I/O
A
8
A
12
Address Inputs
E
Enable Input
R/
W
Read/Write Input
CE
Chip Enable
WC
Write Control
SEL
Device Select--Connect to V
SS
V
SS
Ground
V
CC
Supply Voltage
NC
No Connect
3868 PGM T01.1
3868 FHD F01.1
NC
A12
NC
NC
WC
SEL
A/D0
A/D1
A/D2
A/D3
A/D4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
R/W
AS
A8
A9
A11
E
A10
CE
A/D7
A/D6
A/D5
X68C64
DIP/SOIC
X68C64
3
PRINCIPLES OF OPERATION
The X68C64 is a highly integrated peripheral device for
a wide variety of single-chip microcontrollers. The
X68C64 provides 8K bytes of E
2
PROM which can be
used either for Program Storage, Data Storage, or a
combination of both in systems based upon Von
Neumann (68XX) architectures. The X68C64 incorpo-
rates the interface circuitry normally needed to decode
the control signals and demultiplex the Address/Data
bus to provide a "Seamless" interface.
The interface inputs on the X68C64 are configured such
that it is possible to directly connect them to the proper
interface signals of the appropriate single-chip
microcontroller.
The X68C64 is internally organized as two independent
planes of 4K bytes of memory with the A
12
input select-
ing which of the two planes of memory are to be
accessed. While the processor is executing code out of
one plane, write operations can take place in the other
plane, allowing the processor to continue execution of
code out of the X68C64 during a byte or page write to the
device.
The X68C64 also features an advanced implementation
of the Software Data Protection scheme, called Block
Protect, which allows the device to be broken into 8
independent sections of 1K bytes. Each of these sec-
tions can be independently enabled for write operations;
thereby allowing certain sections of the device to be
secured so that updates can only occur in a controlled
environment (e.g. in an automotive application, only at
an authorized service center). The desired set-up con-
figuration is stored in a nonvolatile register, ensuring the
configuration data will be maintained after the device is
powered down.
The X68C64 also features a Write Control input (
WC
),
which serves as an external control over the completion
of a previously initiated page load cycle.
The X68C64 also features the industry standard
E
2
PROM characteristics such a byte or page mode
write and Toggle Bit Polling.
DEVICE OPERATION
Motorola 68XX operation requires the microcontroller's
AS, E, and R/
W
outputs tied to the X68C64 AS, E, and
R/
W
inputs respectively.
The falling edge of AS will latch the addresses for both
a read and write operation. The state of R/
W
output
determines the operation to be performed, with the E
signal acting as a data strobe.
If R/
W
is HIGH and CE HIGH (read operation), data will
be output on A/D
0
A/D
7
after E transitions HIGH. If
R/
W
is LOW and CE is HIGH (write operation), data
presented at A/D
0
A/D
7
will be strobed into the X68C64
on the HIGH to LOW transition of E.
Typical Application
EXTAL
8 MHz
OSC.
V
CC
V
CC
V
SS
24
30
24
12
X68C64
68HC11A8
29
8
25
MODA
MODB
XTAL
7
8
9
10
11
13
14
15
21
20
17
19
2
16
5
22
18
23
6
31
32
33
34
35
36
37
38
16
15
14
13
12
9
26
27
28
A/D0
A/D1
A/D2
A/D3
A/D4
A/D5
A/D6
A/D7
A8
A9
A10
A11
A12
CE
WC
AS
E
R/W
SEL
PC0
PC1
PC2
PC3
PC4
PC5
PC6
PC7
PB0
PB1
PB2
PB3
PB4
PB7
AS
E
R/W
3868 ILL F03.2
V
CC
X68C64
4
MODE SELECTION
CE
E
R/
W
Mode
I/O
Power
V
SS
X
X
Standby
High Z
Standby (CMOS)
LOW
X
X
Standby
High Z
Standby (TTL)
HIGH
HIGH
HIGH
Read
D
OUT
Active
HIGH
LOW
Write
D
IN
Active
3868 PGM T02.1
requirements. The rising edge of E starts a timer delay-
ing the internal programming cycle 100
s. Therefore,
each successive write operation must begin within 100
s
of the last byte written. The following waveforms illus-
trate the sequence and timing requirements.
PAGE WRITE OPERATION
Regardless of the microcontroller employed, the X68C64
supports page mode write operations. This allows the
microcontroller to write from one to thirty-two bytes of
data to the X68C64. Each individual write within a page
write operation must conform to the byte write timing
Page Write Timing Sequence for E Controlled Operation
Notes: (1) For each successive write within a page write cycle A
5
A
12
must be the same.
(2) Although it is not illustrated, the microcontroller may interleave read operations between the individual byte writes within the page
write operation. Two responses are possible.
a. Reading from the same plane being written (A
12
of Read = A
12
of Write) is effectively a Toggle Bit Polling operation.
b. Reading from the opposite plane being written (A
12
of Read
A
12
of Write) true data will be returned, facilitating the use of a
single memory component as both program and data storage.
3868 FHD F07
tBLC
CE
AS
A/D0A/D7
A8A12
E
R/W
AIN
DIN
A12=n
OPERATION
BYTE 0
BYTE 1
BYTE 2
LAST BYTE
READ (1)(2)
AFTER tWC READY FOR
NEXT WRITE OPERATION
tWC
AIN
DIN
A12=n
AIN
DIN
A12=n
AIN
DIN
A12=n
AIN
DIN
A12=x
AIN
ADDR
AIN
Next Address
X68C64
5
cycle is complete, the toggling will cease and the device
will be accessible for additional read or write operations.
Due to the dual plane architecture, reads for polling must
occur in the plane that is being written; that is, the state
of A
12
during a write must match the state of A
12
during
Toggle Bit Polling.
Toggle Bit Polling
Because the X68C64 typical nonvolatile write cycle time
is less than the specified 5ms, Toggle Bit Polling has
been provided to determine the early completion of
write. During the internal programming cycle, I/O
6
will
toggle from HIGH to LOW and LOW to HIGH on subse-
quent attempts to read the device. When the internal
SYMBOL TABLE
WAVEFORM
INPUTS
OUTPUTS
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don't Care:
Changes
Allowed
Changing:
State Not
Known
N/A
Center Line
is High
Impedance
Toggle Bit Polling E Control
3868 FHD F08
CE
AS
A/D0A/D7
A8A12
E
R/W
AIN
DIN
A12=n
OPERATION
LAST BYTE
WRITTEN
I/O6=X
X68C64 READY FOR
NEXT OPERATION
AIN DOUT
A12=n
AIN DOUT
A12=n
AIN DOUT
A12=n
AIN
A12=n
AIN
ADDR
I/O6=X
I/O6=X
I/O6=X
DOUT
X68C64
6
WRITE AA
TO X555
WRITE 55
TO XAAA
WRITE A0
TO X555
PERFORM BYTE
OR PAGE WRITE
OPERATIONS
WAIT tWC
EXIT ROUTINE
X = A
12
:
A
12
= 1 IF DATA TO BE WRITTEN IS WITHIN
ADDRESS 1000 TO 1FFF.
A
12
= 0 IF DATA TO BE WRITTEN IS WITHIN
ADDRESS 0000 TO 0FFF.
DATA PROTECTION
The X68C64 provides two levels of data protection
through software control. There is a global software data
protection feature similar to the industry standard for
E
2
PROMs and a new Block Protect write lockout protec-
tion providing a secondary level of data security.
Writing with SDP
Setting write lockout is accomplished by writing a five-
byte command sequence, opening access to the Block
Protect Register (BPR). After the fifth byte is written, the
user writes to the BPR, selecting which blocks to protect
or unprotect. All write operations, both the command
sequence and writing the data to the BPR, must conform
to the page write timing requirements.
3868 FHD F09
Software Data Protection
Software Data Protection (SDP) is employed to protect
the entire array against inadvertent writes. To write to
the X68C64, a three-byte command sequence must
precede the byte(s) being written.
All write operations, both the command sequence and
any data write operations, must conform to the page
write timing requirements.
Block Protect Write Lockout
The X68C64 provides a secondary level of data security
referred to as Block Protect write lockout. This is ac-
cessed through an extension of the SDP command
sequence. Block Protect allows the user to lockout
writes to any 1K x 8 blocks of memory. Unlike SDP which
prevents inadvertent writes, but still allows easy system
access to writing the memory, Block Protect will lockout
all attempts unless it is specifically disabled by the host.
This could be used to set a higher level of protection in
a system where a portion of the memory is used for
Program Storage and another portion is used as Data
Storage.
Block Protect Register Format
3868 FHD F11
6
5
4
3
2
1
0
7
000003FF
040007FF
08000BFF
0C000FFF
100013FF
140017FF
18001BFF
1C001FFF
BLOCK
ADDRESS
1 = Protect, 0 = Unprotect Block Specified
MSB
LSB
Setting BPR Command Sequence
3868 FHD F12
WRITE AA
TO X555
WRITE BPR
MASK VALUE TO
ANY ADDRESS
WAIT tWC
EXIT ROUTINE
WRITE 55
TO XAAA
WRITE C0
TO XAAA
WRITE AA
TO X555
WRITE A0
TO X555
X = A
12
:
A
12
= 1 IF PROGRAM BEING EXECUTED IS
WITHIN 0000 TO 0FFF.
A
12
= 0 IF PROGRAM BEING EXECUTED
RESIDES WITHIN 1000 TO 1FFF.
X68C64
7
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. 65
C to +135
C
Storage Temperature ....................... 65
C to +150
C
Voltage on any Pin with
Respect to V
SS
.................................. 1V to +7V
D.C. Output Current ............................................. 5mA
Lead Temperature
(Soldering, 10 seconds) .............................. 300
C
*COMMENT
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reli-
ability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Commercial
0
C
+70
C
Industrial
40
C
+85
C
Military
55
C
+125
C
3868 PGM T03.1
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Limits
Symbol
Parameter
Min.
Max.
Units
Test Conditions
I
CC
V
CC
Current (Active)
60
mA
CE = V
IL
, All I/O's = Open,
Other Inputs = V
CC
, AS = V
IH
I
SB1(CMOS)
V
CC
Current (Standby)
500
A
CE = V
SS
,
All I/O's = Open,Other
Inputs = V
CC
0.3V, AS = V
SS
I
SB2(TTL)
V
CC
Current (Standby)
6
mA
CE = V
IH
, All I/O's = Open, Other
Inputs = V
IH
, AS = V
IL
I
LI
Input Leakage Current
10
A
V
IN
= V
SS
to V
CC
I
LO
Output Leakage Current
10
A
V
OUT
= V
SS
to V
CC
, E = V
IL
V
lL(1)
Input LOW Voltage
1
0.8
V
V
IH(1)
Input HIGH Voltage
2
V
CC
+ 0.5
V
V
OL
Output LOW Voltage
0.4
V
I
OL
= 2.1mA
V
OH
Output HIGH Voltage
2.4
V
I
OH
= 400
A
3868 PGM T05.1
CAPACITANCE T
A
= +25
C, f = 1MHz, V
CC
= 5V
Symbol
Test
Max.
Units
Conditions
C
I/O(2)
Input/Output Capacitance
10
pF
V
I/O
= 0V
C
IN(2)
Input Capacitance
6
pF
V
IN
= 0V
3868 PGM T06
POWER-UP TIMING
Symbol
Parameter
Max.
Units
t
PUR(2)
Power-Up to Read
1
ms
t
PUW(2)
Power-Up to Write
5
ms
3868 PGM T07
Notes: (1) V
IL
min. and V
IH
max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
Supply Voltage
Limits
X68C64
5V
10%
3868 PGM T04.1
X68C64
8
A.C. CONDITIONS OF TEST
Input Pulse Levels
0V to 3V
Input Rise and
Fall Times
10ns
Input and Output
Timing Levels
1.5V
3868 PGM T08.1
Note: (3) This parameter is periodically sampled and not 100% tested.
TEST CIRCUIT
E Controlled Read Cycle
E Controlled Read Cycle
Symbol
Parameter
Min.
Max.
Units
PW
ASH
Address Strobe Pulse Width
80
ns
t
ASL
Address Setup Time
20
ns
t
AHL
Address Hold Time
30
ns
t
ACC
Data Access Time
120
ns
t
DHR
Data Hold Time
0
ns
t
CSL
CE Setup Time
7
ns
PW
EH
E Pulse Width
150
ns
t
ES
Enable Setup Time
30
ns
t
EH
E Hold Time
20
ns
t
RWS
R/
W
Setup Time
20
ns
t
HZ(3)
E LOW to High Z Output
50
ns
t
LZ(3)
E HIGH to Low Z Output
0
ns
3868 PGM T09.1
A.C. CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.)
3868 FHD F04.2
5V
1.92K
100pF
OUTPUT
1.37K
AS
A/D0A/D7
A8A12
R/W
AIN
DOUT
PWASH
CE
tCSL
tASL
tAHL
A8A12
tES
tACC
tDHR
PWEH
tRWS
tEH
tEH
tHZ
tEH
E
3868 FHD F05.1
X68C64
9
E Controlled Write Cycle
Symbol
Parameter
Min.
Max.
Units
PW
ASH
Address Strobe Pulse Width
80
ns
t
ASL
Address Setup Time
20
ns
t
AHL
Address Hold Time
30
ns
t
DSW
Data Setup Time
50
ns
t
DHW
Data Hold Time
30
ns
t
CSL
CE Setup Time
7
ns
PW
EH
E Pulse Width
120
ns
t
WC
Write Cycle Time
5
ms
t
ES
Enable Setup Time
30
ns
t
RWS
R/
W
Setup Time
20
ns
t
EH
E Hold Time
20
ns
t
BLC
Byte Load Time (Page Write)
0.5
100
s
3868 PGM T10
E Controlled Write Cycle
3868 FHD F06.1
Note: (4) t
WC
is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum
time the device requires to automatically complete the internal write operation.
AS
A/D0A/D7
A8A12
R/W
AIN
DIN
3868 FHD F06
PWASH
CE
tCSL
tASL
tAHL
A8A12
tES
tDSW
tDHW
PWEH
tRWS
tEH
tEH
tEH
E
X68C64
10
PACKAGING INFORMATION
3926 FHD F03
NOTE:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. PACKAGE DIMENSIONS EXCLUDE MOLDING FLASH
0.022 (0.56)
0.014 (0.36)
0.150 (3.81)
0.125 (3.18)
0.625 (15.87)
0.600 (15.24)
0.110 (2.79)
0.090 (2.29)
1.265 (32.13)
1.230 (31.24)
1.100 (27.94)
REF.
PIN 1 INDEX
0.162 (4.11)
0.140 (3.56)
0.030 (0.76)
0.015 (0.38)
PIN 1
SEATING
PLANE
0.065 (1.65)
0.040 (1.02)
0.557 (14.15)
0.530 (13.46)
0.080 (2.03)
0.065 (1.65)
0
15
24-LEAD PLASTIC DUAL IN-LINE PACKAGE TYPE P
TYP. 0.010 (0.25)
X68C64
11
PACKAGING INFORMATION
0.290 (7.37)
0.299 (7.60)
0.393 (10.00)
0.420 (10.65)
0.014 (0.35)
0.020 (0.50)
PIN 1
PIN 1 INDEX
0.010 (0.25)
0.020 (0.50)
0.050 (1.27)
0.598 (15.20)
0.610 (15.49)
0.003 (0.10)
0.012 (0.30)
0.092 (2.35)
0.105 (2.65)
(4X) 7
0.015 (0.40)
0.050 (1.27)
0.009 (0.22)
0.013 (0.33)
0
8
X 45
3926 FHD F24
24-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
0.420"
0.050" TYPICAL
0.050"
TYPICAL
0.030" TYPICAL
24 PLACES
FOOTPRINT
X68C64
12
ORDERING INFORMATION
Device
V
CC
Limits
Blank = 5V
10%
Temperature Range
Blank = Commercial = 0
C to +70
C
I = Industrial = 40
C to +85
C
M = Military = 55
C to +128
C
Package
P = 24-Lead Plastic DIP
S = 24-Lead Plastic SOIC
X68C64
X
X
X
LIMITED WARRANTY
Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty,
express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement.
Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and
prices at any time and without notice.
Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are
implied.
U.S. PATENTS
Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475;
4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and
additional patents pending.
LIFE RELATED POLICY
In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error
detection and correction, redundancy and back-up features to prevent such an occurence.
Xicor's products are not authorized for use in critical components in life support devices or systems.
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or effectiveness.