1
Zarlink Semiconductor Inc.
Zarlink, ZL and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc.
Copyright 2003, Zarlink Semiconductor Inc. All Rights Reserved.
Features
Data Rate up to 3.125Gbps
1310nm, 1550nm PIN photodiode
TO-46 Assembly
Integrated TIA and limiting amplifier
Single 3.3V supply
Low power consumption
Applications
Sonet OC-48
SDH STM-16
2.125Gbps fiber channel
2.5 to 3.125Gbps general application
Figure 1 - Pin Diagram
V
CC
Data Out
Data Out
Case
GND
Bottom View
Description
This optical receiver is a 3.3V device which contains a
PIN photodiode, a low noise transimpedance amplifier
with DC-restoration and limiting amplifier assembled in
a TO-46 package. It is designed for ATM/Sonet OC-48
operation. Its double lens optical system is designed
for singlemode fiber as well as for multimode fiber with
core diameter up to 62.5
m. Reliability Assurance
based on Telcordia GR-468-CORE.
Figure 2 - Functional Schematic
V
CC
GND
Data
Data
Data Out
Data Out
November 2003
Ordering Information
ZL60006TED SC Housing
ZL60006/TBD TO-46 with lens
ZL60006TDD ST Housing
-40
C to +85
C
ZL60006
1310nm, 1550nm 2.5Gbps
PIN with Preamplifier
Data Sheet
ZL60006
Data Sheet
2
Zarlink Semiconductor Inc.
Operating Conditions:
25C case temperature/3.3V Supply Voltage/Fiber: Single-mode to multi-mode 62.5/125
m.
Pattern PRBS 2
23
-1 at 2.5Gbps.
Note 1: P
f
= 10uW Peak-Power
Note 2: P
f
= 500uW Peak-Power
Note 3: Measured at 10
-9
BER with a 2
23
-1 PRBS at 2.5Gbps
Note 4: Measured with STM-16 filter on electrical output, i.e 1.875 GHz
Note 5: Typical penalty at 10
-10
BER equals 0.26dB
Note 6: Data pattern are to have maximum run-length and DC-balance shifts no more than that of a PRBS-23 pattern.
Optical and Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Responsivity, differential
R
15
26
kV/W
=1310nm,
R
L=
100
,
Note 1
Output voltage amplitude,
differential
V
O
450
mV
pp
R
L
=100
Note 2
Bandwidth (3dB
el
)
f
c
2.2
GHz
P
f
=10
W, R
L
=100
Optical Saturation Level
(average)
P
sat
1
dBm
=1310nm,
Note 3
Noise-Equivalent Power
NEP
-32
-30
dBm
=1310nm
Note 4
Sensivity (BER 10
-9
)
S
-23
-21
dBm
=
1310nm,
Note 3, 5
Dynamic Range
24
dB
Output Resistance (single)
R
o
50
Power Dissipation
P
D
180
270
mW
Power Supply Current
I
DD
55
75
m
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
0
3.6
V
Storage Temperature
T
stg
-40
125
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3
3.3
3.6
V
Operating Temperature
T
op
-40
85
C
Signaling Rate, note 6
f
D
1
3.125
Gbps
ER
=
ER
=
ZL60006
Data Sheet
3
Zarlink Semiconductor Inc.
Typical Responsivity
Wavelength
Fiber core/cladding diameter numerical aperture
10/125m,
NA=0.11
50/125m,
NA=0.20
62.5/125m,
NA=0.275
Differential responsivity
1310nm
26kV/W
26kV/W
26kV/W
Differential responsivity
1550nm
32kV/W
32kV/W
32kV/W
Figure 3 - Typical Responsivity vs Axial
Displacement for a Multimode Fiber
Figure 4 - Typical Responsivity vs Radial
Displacement for a Multimode Fiber
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
z- A xial Displacement of Fiber (mm) at r-opt, relative TO-46 lens
R
elative R
e
sponsivit
y
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
10
20
30
40
50
60
70
80
90
100
110
120
R-Radial Displacement of Fiber (
m) at z=opt
R
e
lative R
e
sponsivit
y
ZL60006
Data Sheet
4
Zarlink Semiconductor Inc.
Application Guidelines
ESD handling
The receiver is sensitive to electrostatic discharges. When handling the device, precaution for ESD sensitive
devices should be taken. These precautions include use of ESD protected work area with wrist straps, controlled
work benches, floors etc.
Power Supply Filter
Power Supply decoupling capacitors are recommended for optimal performance of the receiver. A filter is
recommended to minimise power supply noise. See Figure 7.
Figure 7 - Recommended Power Supply Filter
Figure 5 - Responsivity vs. Wavelength of
Coupled Input Power
Figure 6 - Differential Amplitude vs Input
Power
Re
lati
ve Respon
si
vit
y
%
100
50
0
1800
800 900 1000 1100 1200 1300 1400 1500 1600 1700
nm
Wavelength
DifferentialAmplitude vs InputPower ER=9dB
0
50
100
150
200
250
300
350
400
450
500
-25
-20
-15
-10
-5
0
InputPower [dBm]
Dif
f
e
rent
ial Amplit
ude [
m
v]
Series1
C
0.1
F
C
10nF
L
10
H
Host
V
CC
PIN /
Receiver
BOTTOM VIEW ( 10 : 1 )
SIDE VIEW
Zarlink Semiconductor 2002. All rights reserved.
ISSUE
ACN
DATE
APPRD.
Previous package codes
Title
Drawing type
Package code
1
JS0 04078R1A
22-MAR-03
TD/BE
JS004078
Package drawing, TO-46 with lens
TB
2,54
1,17
n
- 0
0,05
+
(3x)
0,45
n
- 0,04
0,03
+
(4x)
n
1,02 max
1,0
2
45
3,
6
R2,7
3,8
0,6
13,46
`
0,76
n
4
,
7
Lens
n
1.5
`
0.05
R0,4 max
*
0,33 max
Brazed
*
0,25 max glass overmould (3x)
NOTES:-
1. All dimensions in mm.
2. General tol. ISO-2768-mK.
3. Coating: Case: Ni 1,5-2,5 m.
Header: Ni min 0,5 m / Au min 1,5 m.
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