NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 350 Volt V
CEO
* Gain of 15 at I
C
=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
350
V
Collector-Emitter Voltage
V
CEO
350
V
Emitter-Base Voltage
V
EBO
6
V
Base Current
I
B
250
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
= 25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
350
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
350
V
I
C
=1mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current
I
CBO
50
nA
V
CB
=250V, I
E
=0
Emitter Cut-Off Current
I
EBO
50
nA
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.35
0.5
1.0
V
V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
I
C
=50mA, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.80
0.85
0.90
V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
2.0
V
IC=100mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
20
30
30
20
15
200
200
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency
f
T
40
MHz
I
C
=10mA, V
CE
=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
2N6517
3-3
C
B
E
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