NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt V
CEO
* Gain of 50 at I
C
= 1 Amp
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
2N6714 2N6715
UNIT
Collector-Base Voltage
V
CBO
40
50
V
Collector-Emitter Voltage
V
CEO
30
40
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
= 25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
2N6714
2N6715
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40
50
V
I
C
=1mA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
40
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
0.1
A
A
V
CB
=40V, I
E
=0
V
CB
=50V, I
E
=0
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.2
1.2
V
IC=1A, V
CE
=1V*
Static Forward
Current Transfer
Ratio
h
FE
55
60
50
250
55
60
50
250
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
Transition
Frequency
f
T
50
500
50
500
MHz
I
C
=50mA, V
CE
=10V
Collector Base
Capacitance
C
CB
30
30
pF
V
CE
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
2N6714
2N6715
3-5
C
B
E
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