SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
*
60 Volt V
CEO
PARTMARKING DETAIL 702
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25C
I
D
115
mA
Pulsed Drain Current
I
DM
800
mA
Gate-Source Voltage
V
GS
40
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
60
V
I
D
=10
A, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1
2.5
V
I
D
=250mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
500
A
A
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
500
mA
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Voltage (1)
V
DS(on)
3.75
375
V
mV
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
Static Drain-Source On-State
Resistance (1)
R
DS(on)
7.5
7.5
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
Forward Transconductance
(1)(2)
g
fs
80
mS
V
DS
=25V, I
D
=500mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
5
pF
Turn-On Time (2)(3)
t
(on)
20
ns
V
DD
30V, I
D
=200mA
R
g
=25
, R
L
=150
Turn-Off Time (2)(3)
t
(off)
20
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
2N7002
D
G
S
SOT23
3 - 2
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