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Электронный компонент: BC81716

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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 MARCH 2001
PARTMARKING DETAILS
BC81716
6AZ
BC81725
6BZ
BC81740
6CZ
COMPLEMENTARY TYPE
BC807
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
500
mA
Base Current
I
B
100
mA
Peak Base Current
I
BM
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector Cut-Off
Current
I
CBO
0.1
5
A
A
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=150C
Emitter Cut-Off Current I
EBO
10
A
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
700
mV
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(on)
1.2
V
I
C
=500mA, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BC81716
100
250
I
C
=100mA, V
CE
=1V*
BC81725
160
400
I
C
=100mA, V
CE
=1V*
BC81740
250
600
I
C
=100mA, V
CE
=1V*
All bands
40
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
200
MHz
I
C
=10mA, V
CE
=5V
f=35MHz
Output Capacitance
C
obo
5.0
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions.
BC817
C
B
E
SOT23
TBA