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Электронный компонент: BCP53-16

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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP56
PARTMARKING DETAILS BCP53
BCP53 10
BCP53 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1.5
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80
V
I
C
=- 10mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A
Collector Cut-Off
Current
I
CBO
-100
-20
nA
A
V
CB
=-30V
V
CB
=-30V, T
amb
=150C
Emitter Cut-Off Current I
EBO
-10
A
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
BCP53-10
BCP53-16
40
25
63
100
100
160
250
160
250
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
Transition Frequency
f
T
125
MHz
I
C
=-50mA, V
CE
=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
BCP53
C
C
E
B
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