SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
7
FEATURES
* For AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP68
PARTMARKING DETAIL
BCP69
BCP69 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-25
V
I
C
=-10
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
V
I
C
=- 30mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A
Collector Cut-Off
Current
I
CBO
-100
-10
nA
A
V
CB
=-25V
V
CB
=-25V, T
amb
=150C
Emitter Cut-Off Current I
EBO
-10
A
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
- 0.6
-1.0
V
V
I
C
=-5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
BCP69
BCP69-25
50
63
160
250
400
400
I
C
=-5mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT549 datasheet.
BCP69
C
C
E
B
3 - 20
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