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Электронный компонент: BCW60B-AB

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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA
BCW60AR CR
BCW60B AB
BCW60BR DR
BCW60C AC
BCW60CR AR
BCW60D AD
BCW60DR BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
32
V
Collector-Emitter Voltage
V
CEO
32
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
=25C
P
TOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A
h
FE
Group B
h
FE
Group C
h
FE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
k
h
12e
1.5
2
2
3
10
-4
h
21e
200
260
330
520
h
22e
18
30
24
50
30
60
50
100
S
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32
V
I
C
=2mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
EBO
=1
A
Collector-Emitter
Cut-off Current
I
CES
20
20
nA
A
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current
I
EBO
20
nA V
EBO
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA, I
B
=
0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
h
FE
120
50
78
170
220
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
20
180
70
145
250
310
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
40
250
90
220
350
460
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
100
380
100
300
500
630
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency
f
T
125
250
MHz
I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance
C
ebo
8
pF
V
EBO
=0.5V, f =1MHz
Collector-Base Capacitance
C
cbo
4.5
pF
V
CBO
=10V, f =1MHz
Noise Figure
N
2
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
,
f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
,
R
2
=5K
V
BB
=3.6V, R
L
=990
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
1
R
2
R
L
50
V
CC
(+10V)
-V
BB
+10V
t
r
< 5nsec
Z
in
100k
Oscilloscope
1
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA
BCW60AR CR
BCW60B AB
BCW60BR DR
BCW60C AC
BCW60CR AR
BCW60D AD
BCW60DR BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
32
V
Collector-Emitter Voltage
V
CEO
32
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
=25C
P
TOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A
h
FE
Group B
h
FE
Group C
h
FE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
k
h
12e
1.5
2
2
3
10
-4
h
21e
200
260
330
520
h
22e
18
30
24
50
30
60
50
100
S
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32
V
I
C
=2mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
EBO
=1
A
Collector-Emitter
Cut-off Current
I
CES
20
20
nA
A
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current
I
EBO
20
nA V
EBO
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA, I
B
=
0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
h
FE
120
50
78
170
220
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
20
180
70
145
250
310
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
40
250
90
220
350
460
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
100
380
100
300
500
630
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency
f
T
125
250
MHz
I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance
C
ebo
8
pF
V
EBO
=0.5V, f =1MHz
Collector-Base Capacitance
C
cbo
4.5
pF
V
CBO
=10V, f =1MHz
Noise Figure
N
2
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
,
f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
,
R
2
=5K
V
BB
=3.6V, R
L
=990
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
1
R
2
R
L
50
V
CC
(+10V)
-V
BB
+10V
t
r
< 5nsec
Z
in
100k
Oscilloscope
1
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50