ChipFind - документация

Электронный компонент: BCW66F

Скачать:  PDF   ZIP
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS
BCW66F
EF
BCW66FR
7P
BCW66G
EG
BCW66GR 5T
BCW66H
EH
BCW66HR 7M
COMPLEMENTARY TYPE BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
800
mA
Peak Collector Current(10ms)
I
CM
1000
mA
Base Current
I
B
100
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
BCW66
C
B
E
SOT23
TBA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
V
I
CEO
=10mA
V
(BR)CES
75
V
IC=10
A
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
EBO
=10
A
Collector-Emitter
Cut-off Current
I
CES
20
20
nA
A
V
CES
= 45V
V
CES
= 45V , T
amb
=150C
Emitter-Base Cut-Off Current
I
EBO
20
nA V
EBO
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.3
0.7
V
V
I
C
=100mA, I
B
=
10mA
I
C
= 500mA, I
B
= 50mA*
Base-Emitter Saturation Voltage
V
BE(sat)
2
V
I
C
=500mA, I
B
=50mA*
Static
Forward
Current
Transfer
BCW66F h
FE
75
100
35
160
250
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
BCW66G h
FE
110
160
60
250
400
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
BCW66H h
FE
180
250
100
350
630
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
Transition Frequency
f
T
100
MHz I
C
=20mA, V
CE
=10V
f = 100MHz
Output Capacitance
C
obo
8
12
pF
V
CB
=10V, f =1MHz
Input Capacitance
C
ibo
80
pF
V
EB
=0.5V, f =1MHz
Noise Figure
N
2
10
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=1k
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
I
C
=150mA
I
B1
=- I
B2
=15mA
R
L
=150
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW66
TBA