SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS
BCW68F
DF
BCW68FR
7T
BCW68G
DG
BCW68GR 5T
BCW68H
DH
BCW68HR 7N
COMPLEMENTARY TYPES BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
-60
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current(10ms)
I
CM
-1000
mA
Continuous Collector Current
I
C
-800
mA
Base Current
I
B
-100
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
BCW68
C
B
E
SOT23
TBA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-45
V
I
CEO
=-10mA
V
(BR)CES
-60
IC=-10
A
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
EBO
=-10
A
Collector-Emitter
Cut-off Current
I
CES
-20
-10
nA
A
V
CES
=-45V
V
CES
=-45V, T
amb
=150C
Emitter-Base Cut-Off Current
I
EBO
-20
nA V
EBO
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.7
-0.3
V
V
I
C
=-100mA, I
B
= -10mA
I
C
= -500mA, I
B
=-50mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-2
V
I
C
=-500mA,I
B
=-50mA*
Static
Forward
Current
Transfer
BCW68F
h
FE
100
35
170
250
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
BCW68G
h
FE
160
60
250
400
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
BCW68H
h
FE
250
100
350
630
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-20mA, V
CE
=-10V
f = 100MHz
Output Capacitance
C
obo
12
18
pF
V
CB
=-10V, f =1MHz
Input Capacitance
C
ibo
80
pF
V
EB
=-0.5V, f =1MHz
Noise Figure
N
2
10
dB
I
C
= -0.2mA, V
CE
=- 5V
R
G
=1K
,
f=1KH
f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
I
C
=-150mA
I
B1
=- I
B2
=-15mA
R
L
=150
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW68
TBA
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