SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 MARCH 2001
PARTMARKING DETAILS
BCX17
T1
BCX17R
T4
COMPLIMENTARY TYPES -
BCX19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
-50
V
Collector-Emitter Voltage (I
C
=-10mA)
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-500
mA
Peak Collector Current
I
CM
-1000
mA
Peak Emitter Current
I
EM
-1000
mA
Base Current
I
B
-100
mA
Peak Base Current
I
BM
-200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Cut-Off
Current
I
CBO
-100
-200
nA
A
I
E
=0, V
CB
=-20V
I
E
=0, V
CB
=-20V, T
j
=150C
Emitter-Base Cut-Off
Current
I
EBO
-10
A
I
C
=0, V
EB
=-1V
Base-Emitter Voltage
V
BE
-1.2
V
I
C
=-500mA, V
CE
=-1V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-620
mV
I
C
=-500mA, I
B
=-50mA*
Static Forward Current
Transfer Ratio
h
FE
100
70
40
600
I
C
=-10
0
mA, V
CE
=-1V
I
C
=-300mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
Transition Frequency
f
T
100
MHz
I
C
=-10mA, V
CE
=-5V
f =35MHz
Output Capacitance
C
obo
8.0
pF
V
CB
=-10V, f =1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
BCX17
C
B
E
SOT23
TBA
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