SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 MARCH 2001
PARTMARKING DETAILS
BCX19 -
U1
BCX19R
-
U4
COMPLEMENTARY TYPES -
BCX17
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1000
mA
Continuous Collector Current
I
C
500
mA
Base Current
I
B
100
mA
Peak Base Current
I
BM
200
mA
Power Dissipation at T
amb
=25C
P
TOT
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Cut-Off
Current
I
CBO
100
200
nA
A
V
CB
=20V
V
CB
=20V, T
j
=150C
Emitter-Base Cut-Off
Current
I
EBO
10
A
V
EB
=5V
Base-Emitter Voltage
V
BE
1.2
V
I
C
=500mA, V
CE
=1V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
620
mV
I
C
=500mA, I
B
=50mA*
Static Forward Current
Transfer Ratio
h
FE
100
70
40
600
I
C
=10
0
mA, V
CE
=1V
I
C
=300mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
200
MHz
I
C
=10mA, V
CE
=5V
f =35MHz
Output Capacitance
C
obo
5.0
pF
V
CB
=10V, f =1MHz
*Measured under pulsed conditions.
BCX19
C
B
E
SOT23
TBA
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