NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
800
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=60V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25
V
I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.8
V
I
C
=800mA, V
CE
=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A
h
FE
500
1000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38B
2000
4000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38C
5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
E-Line
TO92 Compatible
C
B
E
BCX38A/B/C
3-20
BCX38A/B/C
0.0001
50
150
100
Pulse Width (seconds)
10
100
1
0.1
0.01
0.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001
0.01
0.1
1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
-
(V
olts)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
- (V
olts)
V
BE
(
sa
t
)
- (V
olts)
0.4
0.001
0.01
0.1
1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
Safe Operating Area
I
C
- Co
l
l
e
c
to
r
Cur
r
e
n
t
(
A
m
ps)
V
CE
-
Collector Voltage (Volts)
1
1000
10
100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.6
0.001
0.01
0.1
1
10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001
0.01
0.1
1
10
V
CE
=5V
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
-55C
+25C
+100C
-55C
+25C
+100C
+175C
Maximum transient thermal impedance
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
3-21
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
800
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=60V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25
V
I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.8
V
I
C
=800mA, V
CE
=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A
h
FE
500
1000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38B
2000
4000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38C
5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
E-Line
TO92 Compatible
C
B
E
BCX38A/B/C
3-20
BCX38A/B/C
0.0001
50
150
100
Pulse Width (seconds)
10
100
1
0.1
0.01
0.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001
0.01
0.1
1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(s
a
t
)
-
(V
olts)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
- (V
olts)
V
BE
(
sa
t
)
- (V
olts)
0.4
0.001
0.01
0.1
1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
Safe Operating Area
I
C
- Co
l
l
e
c
to
r
Cur
r
e
n
t
(
A
m
ps)
V
CE
-
Collector Voltage (Volts)
1
1000
10
100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.6
0.001
0.01
0.1
1
10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001
0.01
0.1
1
10
V
CE
=5V
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
-55C
+25C
+100C
-55C
+25C
+100C
+175C
Maximum transient thermal impedance
T
h
e
r
m
a
l
R
esis
ta
nce (
C/
W
)
3-21
BCX38A/B/C
V
CE
- Collector-Emitter Voltage - (V)
10
100
1
Maximum Power Dissipation - (W)
0.8
0.6
0.4
0.2
1.0
R
S
10k
R
S
=47k
R
S
=1M
R
S
=
3-22
The maximum permissable operational
temperature can be obtained using the
equation:
T
amb
(
max
)
=
Power
(
max
)
-
Power
(
actual
)
0.0057
+
25C
T
amb(max)
= Maximum operating ambient
temperature
Power (max) = Maximum power
dissipation figure, for a given V
CE
and
source resistance (R
S
)
Power (actual) = Actual power dissipation
in users circuit
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