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Электронный компонент: BCX51-AA

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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
7
COMPLEMENTARY TYPE
BCX51 BCX54
BCX52 BCX55
BCX53 BCX56
PARTMARKING DETAILS
BCX51
AA
BCX52
AE
BCX53
AH
BCX51-10 AC
BCX52-10 AG
BCX53-10 AK
BCX51-16 AD
BCX52-16 AM
BCX53-16 AL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX51
BCX52
BCX53
UNIT
Collector-Base Voltage
V
CBO
-45
-60
-100
V
Collector-Emitter Voltage
V
CEO
-45
-60
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1.5
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
BCX53
Breakdown BCX52
Voltage
BCX51
V
(BR)CBO
-100
-60
-45
V
V
V
I
C
=-100
A
I
C
=-100
A
I
C
=-100
A
Collector-Emitter BCX53
Breakdown BCX52
Voltage
BCX51
V
(BR)CEO
-80
-60
-45
V
I
C
=-10mA*
I
C
=-10mA*
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A
Collector Cut-Off Current
I
CBO
-0.1
-20
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=150C
Emitter Cut-Off Current
I
EBO
-20
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
-10
-16
25
40
25
63
100
250
160
250
I
C
=-5mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
Transition Frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V,
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
BCX51
BCX52
BCX53
C
C
B
E
SOT89
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