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Электронный компонент: BCX54-10-BC

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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
7
PARTMARKING DETAILS:-
BCX54 BA
BCX54-10 BC
BCX54-16 BD
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BCX56 BH
BCX56-10 BK
BCX56-16 BL
COMPLEMENTARY TYPES:-
BCX54 BCX51 BCX55 BCX52 BCX56 BCX53
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX54
BCX55
BCX56
UNIT
Collector-Base Voltage
V
CBO
45
60
100
V
Collector-Emitter Voltage
V
CEO
45
60
80
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V
(BR)CBO
45
60
100
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V
(BR)CEO
45
60
80
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off Current
I
CBO
0.1
20
A
A
V
CB
=30V
V
CB
=30V, T
amb
=150C
Emitter Cut-Off Current
I
EBO
20
nA
V
EB
=4V
Collector-Emitter Saturation Voltage V
CE(sat)
0.5
V
I
C
=500mA, I
B
=50mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
10
16
25
40
25
63
100
250
160
250
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
Transition Frequency
f
T
150
MHz I
C
=50mA, V
CE
=10V,
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
BCX54
BCX55
BCX56
C
C
B
E
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