SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 MARCH 2001
COMPLEMENTARY TYPE BCX5316
PARTMARKING DETAIL BL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
100
V
IC =100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
IC =10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off Current
I
CBO
0.1
20
A
A
V
CB
=30V
V
CB
=30V, T
amb
=150C
Emitter Cut-Off Current
I
EBO
20
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=500mA, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
25
100
25
250
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V,
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions.
BCX5616
C
C
B
E
SOT89
TBA
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