SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 FEBRUARY 1995
7
FEATURES
*
High gain and low saturation voltages
COMPLEMENTARY TYPE
BCX68
PARTMARKING DETAIL
BCX69
CJ
BCX69-16 CG
BCX69-25 CH
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
-25
V
IC =-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
V
IC =-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
A
A
V
CB
=-25V
V
CB
=-25V, T
amb
=150C
Emitter Cut-Off Current
I
EBO
-10
A
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-1A, I
B
=-100mA
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-1V
Static Forward Current
Transfer Ratio
h
FE
BCX69-16
BCX69-25
50
85
60
100
160
250
375
250
400
I
C
=-5mA, V
CE
=-1V
I
C
=-500mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V,
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT549 datasheet.
BCX69
C
C
B
E
SOT89
3 - 37
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