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Электронный компонент: BCX70HR

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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
=25C
P
TOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G
h
FE
Group H
h
FE
Group J
h
FE
Group K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
k
h
12e
1.5
2
2
3
10
-4
h
21e
200
260
330
520
h
22e
18
30
24
50
30
60
50
100
S
SWITCHING CIRCUIT
BCX70
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage
V
(BR)CEO
45
V
I
C
=2mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
EBO
=1
A
Collector-Emitter Cut-off Current
I
CES
20
20
nA
A
V
CES
=45V
V
CES
=45V,
T
amb
=150oC
Emitter-Base Cut-Off Current
I
EBO
20
nA V
EBO
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA,I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA,I
B
=0.25mA,
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static Forward Current
Transfer Ratio
BCX70G
h
FE
120
50
78
170
220
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70H
h
FE
20
180
70
145
250
310
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70J
h
FE
40
250
90
220
350
460
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70K
h
FE
100
380
100
300
500
630
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency
f
T
125
250
MHz I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance
C
ebo
8
pF
V
EBO
=0.5V, f =1MHz
Collector-Base Capacitance
C
cbo
4.5
pF
V
CBO
=10V, f =1MHz
Noise Figure
N
2
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
,
f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
,
R
2
=5K
V
BB
=3.6V, R
L
=990
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
Spice parameter data is available upon request for this device
BCX70
C
B
E
R
1
R
2
R
L
50
V
CC
(+10V)
-V
BB
+10V
t
r
< 5nsec
Z
in
100k
Oscilloscope
1
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
=25C
P
TOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G
h
FE
Group H
h
FE
Group J
h
FE
Group K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
k
h
12e
1.5
2
2
3
10
-4
h
21e
200
260
330
520
h
22e
18
30
24
50
30
60
50
100
S
SWITCHING CIRCUIT
BCX70
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage
V
(BR)CEO
45
V
I
C
=2mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
EBO
=1
A
Collector-Emitter Cut-off Current
I
CES
20
20
nA
A
V
CES
=45V
V
CES
=45V,
T
amb
=150oC
Emitter-Base Cut-Off Current
I
EBO
20
nA V
EBO
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA,I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA,I
B
=0.25mA,
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static Forward Current
Transfer Ratio
BCX70G
h
FE
120
50
78
170
220
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70H
h
FE
20
180
70
145
250
310
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70J
h
FE
40
250
90
220
350
460
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70K
h
FE
100
380
100
300
500
630
I
C
=10
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency
f
T
125
250
MHz I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance
C
ebo
8
pF
V
EBO
=0.5V, f =1MHz
Collector-Base Capacitance
C
cbo
4.5
pF
V
CBO
=10V, f =1MHz
Noise Figure
N
2
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
,
f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
,
R
2
=5K
V
BB
=3.6V, R
L
=990
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
Spice parameter data is available upon request for this device
BCX70
C
B
E
R
1
R
2
R
L
50
V
CC
(+10V)
-V
BB
+10V
t
r
< 5nsec
Z
in
100k
Oscilloscope
1
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50