C
C
E
B
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 MARCH 2001
FEATURES
*
High breakdown and low saturation voltages
APPLICATIONS
*
Suitable for video output stages in TV sets
*
Switching power supplies
COMPLEMENTARY TYPE:- BF721
PARTMARKING DETAILS:- BF720
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
100
mA
Continuous Collector Current
I
C
50
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off Current I
CBO
10
nA
V
CB
=200V, I
E
=0
Collector Cut-Off
Current
I
CER
50
10
nA
A
V
CE
=200V, R
BE
=2.7K
V
CE
=200V, R
BE
=2.7k
Emitter Cut-Off Current
I
EBO
10
A
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.6
V
I
C
=30mA, I
B
=5mA*
Base Emitter
Saturation Voltage
V
BE (sat)
0.9
V
I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
50
I
C
=25mA, V
CE
=20V*
Transition Frequency
f
T
100
MHz
I
C
=10mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
0.8
pF
V
CB
=30V, f=1MHz
Tamb =150C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
BF720
TBA
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