SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 MARCH 2001
FEATURES
*
High breakdown and low saturation voltages
APPLICATIONS
*
Suitable for video output stages in TV sets
*
Switching power supplies
COMPLEMENTARY TYPE:-
BF720
PARTMARKING DETAILS:-
BF721
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-100
mA
Continuous Collector Current
I
C
-50
mA
Power Dissipation at T
amb
=25C
P
tot
-2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown
Voltage
BF721
V
(BR)CBO
-300
V
I
C
=-10
A, I
E
=0
Collector-Emitter
Breakdown
Voltage
BF721
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off Current I
CBO
-10
nA
V
CB
=-200V, I
E
=0
Collector Cut-Off
Current
I
CER
-50
-10
nA
A
V
CE
=-200V, R
BE
=2.7K
V
CE
=-200V, R
BE
=2.7K
Emitter Cut-Off Current
I
EBO
-10
A
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.6
V
I
C
=-30mA, I
B
=-5mA*
Base Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
-50
I
C
=-25mA, V
CE
=-20V*
Transition Frequency
f
T
100
MHz
I
C
=-10mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
0.8
pF
V
CB
=-30V, f=1MHz
T
amb
=150C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
BF721
C
C
E
B
TBA
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